公开(公告)号：US20220020578A1

公开(公告)日：2022-01-20

申请号：US16928606

申请日：2020-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Fuhong ZHANG ,  Shirish A. PETHE ,  Martin Lee RIKER ,  Lewis Yuan Tse LO ,  Lanlan ZHONG ,  Xianmin TANG ,  Paul Dennis CONNORS

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  C23C14/14 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.

公开(公告)号：US20210391214A1

公开(公告)日：2021-12-16

申请号：US16902655

申请日：2020-06-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Shirish A. PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Kishor KALATHIPARAMBIL ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/321

Abstract: A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.

公开(公告)号：US20220259720A1

公开(公告)日：2022-08-18

申请号：US17177875

申请日：2021-02-17

Applicant: Applied Materials, Inc.

Inventor： Suhas BANGALORE UMESH ,  Preetham RAO ,  Shirish A. PETHE ,  Fuhong ZHANG ,  Kishor Kumar KALATHIPARAMBIL ,  Martin Lee RIKER ,  Lanlan ZHONG

IPC: C23C14/50 ,  C23C14/34 ,  C23C14/54

Abstract: Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

公开(公告)号：US20220084882A1

公开(公告)日：2022-03-17

申请号：US17022058

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Fuhong ZHANG ,  Gang SHEN ,  Feng CHEN ,  Rui LI ,  Xiangjin XIE ,  Tae Hong HA ,  Xianmin TANG

IPC: H01L21/768 ,  C23C16/455 ,  G11B5/31

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.