公开(公告)号：US20210391214A1

公开(公告)日：2021-12-16

申请号：US16902655

申请日：2020-06-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Shirish A. PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Kishor KALATHIPARAMBIL ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/321

Abstract: A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.