公开(公告)号：US20220020578A1

公开(公告)日：2022-01-20

申请号：US16928606

申请日：2020-07-14

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Fuhong ZHANG ,  Shirish A. PETHE ,  Martin Lee RIKER ,  Lewis Yuan Tse LO ,  Lanlan ZHONG ,  Xianmin TANG ,  Paul Dennis CONNORS

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/54 ,  C23C14/14 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. A method, for example, includes igniting a plasma at a first pressure within a processing volume of a process chamber; depositing sputter material from a target disposed within the processing volume while decreasing the first pressure to a second pressure within a first time frame while maintaining the plasma; continuing to deposit sputter material from the target while decreasing the second pressure to a third pressure within a second time frame less than the first time frame while maintaining the plasma; and continuing to deposit sputter material from the target while maintaining the third pressure for a third time frame that is greater than or equal to the second time frame while maintaining the plasma.