公开(公告)号：US20240258109A1

公开(公告)日：2024-08-01

申请号：US18532381

申请日：2023-12-07

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Kai WU ,  Min-Han LEE ,  Yang LI ,  Cheng CHENG ,  Zhixiu LIANG

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/14 ,  C23C16/34

CPC classification number: H01L21/28568 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/34

Abstract: A method of forming a structure on a substrate includes forming an adhesion layer on a substrate. The method further includes forming a tungsten containing layer in-situ with the adhesion layer. The tungsten containing layer is formed by a one-time soak process including soaking the substrate once, and only once, in a first gas, purging the first gas, and soaking the substrate once, and only once, in a second gas. The method further includes removing the tungsten containing layer from the adhesion layer.