公开(公告)号：US09059398B2

公开(公告)日：2015-06-16

申请号：US13750892

申请日：2013-01-25

Applicant: Applied Materials, Inc.

Inventor： Jisoo Kim ,  Mang-Mang Ling ,  Khoi Doan ,  Chi Hong Ching ,  Srinivas D. Nemani

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08

Abstract: Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer.

Abstract translation: 本发明的实施例提供了用于在磁阻随机存取存储器应用中在衬底上制造磁性隧道结（MTJ）结构的方法和装置。 在一个实施例中，在衬底上形成MTJ结构的方法包括提供衬底，其具有设置在设置在衬底上的第一和第二铁磁层之间的绝缘隧道层，其中第一铁磁层设置在衬底上， 绝缘隧道层和第二铁磁层，提供离子注入气体混合物以将离子注入到由第二铁磁层限定的开口暴露的第一铁磁层中，并蚀刻所注入的第一铁磁层。

公开(公告)号：US20140308758A1

公开(公告)日：2014-10-16

申请号：US13934017

申请日：2013-07-02

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Sumit Agarwal ,  Jeremiah T. Pender ,  Jonathan Germain ,  Khoi Doan ,  Bradley Howard

IPC: H01L43/12

CPC classification number: H01L43/12

Abstract: Methods of forming material junctions for magnetic memory devices are described. The methods involve providing a material stack including a bottom magnetic tunneling junction layer, a tunneling barrier layer, and a top magnetic tunneling junction layer (from bottom to top) on a substrate. The top magnetic tunneling junction layer is patterned to form a top magnetic tunneling junction and then a dielectric spacer layer may be formed over the top magnetic tunneling junction. The dielectric spacer is etched to leave a vertical dielectric spacer to maintain electrical separation between the top magnetic tunneling junction and the bottom magnetic tunneling junction during and following subsequent etching/processing. In an alternative embodiment the spacer layer is lithographically defined.

Abstract translation: 描述了形成用于磁存储器件的材料结的方法。 所述方法包括在衬底上提供包括底部磁隧道结层，隧道势垒层和顶部磁性隧道结层（从底部到顶部）的材料堆叠。 将顶部磁隧道结层图案化以形成顶部磁性隧道结，然后可以在顶部磁性隧道结上方形成电介质间隔层。 蚀刻电介质间隔物以留下垂直电介质间隔物，以在随后的蚀刻/处理期间和之后保持顶部磁隧道结与底部磁性隧道结之间的电分离。 在替代实施例中，间隔层被光刻地限定。