- 专利标题: LOW-K BORON CARBONITRIDE FILMS
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申请号: US17144972申请日: 2021-01-08
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公开(公告)号: US20220223409A1公开(公告)日: 2022-07-14
- 发明人: Zeqing Shen , Bo Qi , Abhijit Basu Mallick , Nitin K. Ingle
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
Exemplary methods of semiconductor processing may include providing a boron-and-carbon-and-nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include generating a capacitively-coupled plasma of the boron-and-carbon-and-nitrogen-containing precursor. The methods may include forming a boron-and-carbon-and-nitrogen-containing layer on the substrate. The boron-and-carbon-and-nitrogen-containing layer may be characterized by a dielectric constant below or about 3.5.
公开/授权文献
- US11830729B2 Low-k boron carbonitride films 公开/授权日:2023-11-28
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