公开(公告)号：US20240266180A1

公开(公告)日：2024-08-08

申请号：US18429554

申请日：2024-02-01

申请人： Applied Materials, Inc.

发明人： David Knapp ,  Feng Qiao ,  Hailong Zhou ,  Junkai He ,  Qian Fu ,  Mark J. Saly ,  Jeffrey Anthis ,  Jayoung Choi

IPC分类号： H01L21/3065 ,  H10B12/00

CPC分类号： H01L21/3065 ,  H10B12/01

摘要： A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.

公开(公告)号：US20240003003A1

公开(公告)日：2024-01-04

申请号：US18368202

申请日：2023-09-14

申请人： Applied Materials, Inc.

发明人： Lisa J. Enman ,  Steven D. Marcus ,  Mark J. Saly ,  Lei Zhou

IPC分类号： C23C16/40 ,  C23C16/455

CPC分类号： C23C16/40 ,  C23C16/45553 ,  C23C16/45555

摘要： Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.

公开(公告)号：US20220301883A1

公开(公告)日：2022-09-22

申请号：US17836694

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

公开(公告)号：US20240128091A1

公开(公告)日：2024-04-18

申请号：US18221063

申请日：2023-07-12

申请人： Applied Materials, Inc.

发明人： Zhonghua Yao ,  Qian Fu ,  Mark J. Saly ,  Yang Yang ,  Jeffrey W. Anthis ,  David Knapp ,  Rajesh Sathiyanarayanan

IPC分类号： H01L21/311 ,  H01L21/67

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/67069

摘要： A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

公开(公告)号：US20220076960A1

公开(公告)日：2022-03-10

申请号：US17014251

申请日：2020-09-08

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.

公开(公告)号：US20240360549A1

公开(公告)日：2024-10-31

申请号：US18140179

申请日：2023-04-27

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Byunghoon Yoon ,  Joung-Joo Lee ,  Avgerinos V. Gelatos ,  Mark J. Saly

IPC分类号： C23C16/34 ,  C23C16/455 ,  H01L21/768 ,  H01L23/532

CPC分类号： C23C16/34 ,  C23C16/45527 ,  H01L21/76844 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5226

摘要： A method includes performing a reactant step of a deposition cycle of a deposition process to form a molybdenum (Mo)-based material, performing a Mo precursor step of the deposition cycle, and performing a treatment step of the deposition cycle. Performing the reactant step includes introducing a reactant, performing the Mo precursor step includes introducing a Mo precursor, and performing the treatment step includes introducing a treatment gas. The deposition process is performed at a temperature that is less than or equal to about 450° C.

公开(公告)号：US20240332001A1

公开(公告)日：2024-10-03

申请号：US18128484

申请日：2023-03-30

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Jeffrey W. Anthis

IPC分类号： H01L21/02

CPC分类号： H01L21/02167 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/0228

摘要： Exemplary methods of semiconductor processing may include providing a first precursor to a semiconductor processing chamber. A substrate may be disposed within a processing region of the semiconductor processing chamber. The substrate may define a feature. The methods may include contacting the substrate with the first precursor. The contacting may form a first portion of a silicon-carbon-and-nitrogen-containing material on the substrate. The methods may include providing a second precursor to the semiconductor processing chamber. The methods may include contacting the substrate with the second precursor. The contacting may form the silicon-carbon-and-nitrogen-containing material on the substrate. The silicon-carbon-and-nitrogen-containing material may be void free.

公开(公告)号：US11536708B2

公开(公告)日：2022-12-27

申请号：US16738629

申请日：2020-01-09

申请人： Applied Materials, Inc.

发明人： Mark J. Saly ,  Keenan Navarre Woods ,  Joseph R. Johnson ,  Bhaskar Jyoti Bhuyan ,  William J. Durand ,  Michael Chudzik ,  Raghav Sreenivasan ,  Roger Quon

IPC分类号： B82Y15/00 ,  B82Y40/00 ,  G01N33/487 ,  B01D67/00 ,  C12Q1/6869

摘要： Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.

公开(公告)号：US20240145232A1

公开(公告)日：2024-05-02

申请号：US17976440

申请日：2022-10-28

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Mark J. Saly ,  David Thompson

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02118 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02227 ,  H01L21/0228

摘要： A method includes forming a first layer and a second layer on a substrate, forming a passivation layer on a surface of the first layer without forming the passivation layer on a surface of the second layer by exposing the first layer and the second layer to a benzyl compound, and after forming the passivation layer on the first layer, performing at least one of: depositing a third layer on the second layer, or etching the second layer.

公开(公告)号：US11942330B2

公开(公告)日：2024-03-26

申请号：US17836694

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31122 ,  H01L21/02175

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.