公开(公告)号：US20240266180A1

公开(公告)日：2024-08-08

申请号：US18429554

申请日：2024-02-01

申请人： Applied Materials, Inc.

发明人： David Knapp ,  Feng Qiao ,  Hailong Zhou ,  Junkai He ,  Qian Fu ,  Mark J. Saly ,  Jeffrey Anthis ,  Jayoung Choi

IPC分类号： H01L21/3065 ,  H10B12/00

CPC分类号： H01L21/3065 ,  H10B12/01

摘要： A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.