公开(公告)号：US20240266180A1

公开(公告)日：2024-08-08

申请号：US18429554

申请日：2024-02-01

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  Feng Qiao ,  Hailong Zhou ,  Junkai He ,  Qian Fu ,  Mark J. Saly ,  Jeffrey Anthis ,  Jayoung Choi

IPC: H01L21/3065 ,  H10B12/00

CPC classification number: H01L21/3065 ,  H10B12/01

Abstract: A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.

公开(公告)号：US20240096641A1

公开(公告)日：2024-03-21

申请号：US17949083

申请日：2022-09-20

Applicant: Applied Materials, Inc.

Inventor： Hailong Zhou ,  Iljo Kwak ,  Olivier P. Joubert ,  Yu Wen

IPC: H01L21/311 ,  H01J37/32 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01J37/32146 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32816 ,  H01L27/115 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include etching a first portion of a feature in a substrate disposed within a processing region of a semiconductor processing chamber. The first portion of the feature may at least partially extend through one or more layers of material formed on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the carbon-containing precursor. The methods may include forming a carbon-containing material on the substrate. The carbon-containing material may line the first portion of the feature at least partially extending through the one or more layers of material formed on the substrate. The carbon-containing material may be formed in the same chamber where the feature is etched.

公开(公告)号：US11495470B1

公开(公告)日：2022-11-08

申请号：US17244873

申请日：2021-04-29

Applicant: Applied Materials, Inc.

Inventor： Hailong Zhou ,  Sean Kang ,  Kenji Takeshita ,  Rajinder Dhindsa ,  Taehwan Lee ,  Iljo Kwak

IPC: H01L21/311

Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly. The first pulsed voltage waveform comprises a series of repeating pulsed waveform cycles that each include a first portion that occurs during a first time interval, a second portion that occurs during a second time interval, and a peak-to-peak voltage. The pulsed voltage waveform is substantially constant during at least a portion of the second time interval.

公开(公告)号：US09595451B1

公开(公告)日：2017-03-14

申请号：US14887254

申请日：2015-10-19

Applicant: Applied Materials, Inc.

Inventor： Hailong Zhou ,  Gene Lee ,  Liming Yang

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/31144

Abstract: Methods for forming high aspect ratio features using an etch process are provided. In one embodiment, a method for etching a dielectric layer to form features in the dielectric layer includes (a) supplying an etching gas mixture during a first mode to etch a portion of a dielectric layer disposed on a substrate while forming a passivation protection in the dielectric layer, wherein the dielectric layer is etched through openings defined in a patterned mask layer disposed on the dielectric layer, (b) supplying an etching gas mixture during a second mode to continue forming the passivation protection in the dielectric layer without etching the dielectric layer, and repeatedly performing (a) and (b) to form features in the dielectric layer until a surface of the substrate is exposed.

Abstract translation: 提供了使用蚀刻工艺形成高纵横比特征的方法。 在一个实施例中，用于蚀刻电介质层以在电介质层中形成特征的方法包括（a）在第一模式期间提供蚀刻气体混合物以蚀刻布置在衬底上的介电层的一部分，同时在 电介质层，其中通过限定在设置在电介质层上的图案化掩模层中限定的开口蚀刻电介质层，（b）在第二模式期间提供蚀刻气体混合物，以在电介质层中继续形成钝化保护，而不蚀刻介电层 并且重复地执行（a）和（b）以形成电介质层中的特征，直到基板的表面露出。