Invention Grant
US09595451B1 Highly selective etching methods for etching dielectric materials
有权
用于蚀刻电介质材料的高选择性蚀刻方法
- Patent Title: Highly selective etching methods for etching dielectric materials
- Patent Title (中): 用于蚀刻电介质材料的高选择性蚀刻方法
-
Application No.: US14887254Application Date: 2015-10-19
-
Publication No.: US09595451B1Publication Date: 2017-03-14
- Inventor: Hailong Zhou , Gene Lee , Liming Yang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02
Abstract:
Methods for forming high aspect ratio features using an etch process are provided. In one embodiment, a method for etching a dielectric layer to form features in the dielectric layer includes (a) supplying an etching gas mixture during a first mode to etch a portion of a dielectric layer disposed on a substrate while forming a passivation protection in the dielectric layer, wherein the dielectric layer is etched through openings defined in a patterned mask layer disposed on the dielectric layer, (b) supplying an etching gas mixture during a second mode to continue forming the passivation protection in the dielectric layer without etching the dielectric layer, and repeatedly performing (a) and (b) to form features in the dielectric layer until a surface of the substrate is exposed.
Information query
IPC分类:
