公开(公告)号：US20210032749A1

公开(公告)日：2021-02-04

申请号：US16941843

申请日：2020-07-29

申请人： Applied Materials, Inc.

发明人： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC分类号： C23C16/455 ,  C23C16/02

摘要： Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

公开(公告)号：US11932938B2

公开(公告)日：2024-03-19

申请号：US16935658

申请日：2020-07-22

申请人： Applied Materials, Inc.

发明人： Lisa J. Enman ,  Steven D. Marcus ,  Mark J. Saly ,  Lei Zhou

IPC分类号： C23C16/40 ,  C23C16/455

CPC分类号： C23C16/40 ,  C23C16/45553 ,  C23C16/45555

摘要： Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.

公开(公告)号：US20220351960A1

公开(公告)日：2022-11-03

申请号：US17347789

申请日：2021-06-15

申请人： Applied Materials, Inc.

发明人： Lisa J. Enman ,  Mark Saly ,  Sanni Seppaelae ,  Gayatri Natu

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/30 ,  C23C16/56

摘要： Methods and precursors for depositing metal fluoride films on a substrate surface are described. The method includes exposing the substrate surface to a metal precursor and a fluoride precursor. The fluoride precursor is volatile at a temperature in a range of from 20° C. to 200° C. The metal precursor reacts with the fluoride precursor to form a non-volatile metal fluoride film.

公开(公告)号：US20220076960A1

公开(公告)日：2022-03-10

申请号：US17014251

申请日：2020-09-08

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.

公开(公告)号：US20240258116A1

公开(公告)日：2024-08-01

申请号：US18101932

申请日：2023-01-26

申请人： Applied Materials, Inc.

发明人： Baiwei Wang ,  Wanxing Xu ,  Lisa J. Enman ,  Aaron Dangerfield ,  Rohan Puligoru Reddy ,  Xiaolin C. Chen ,  Mikhail Korolik ,  Bhaskar Jyoti Bhuyan ,  Zhenjiang Cui ,  Anchuan Wang

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31122 ,  H01L21/02186 ,  H01L21/02315 ,  H01L21/0234

摘要： Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a titanium-containing material. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the titanium-containing material.

公开(公告)号：US11942330B2

公开(公告)日：2024-03-26

申请号：US17836694

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31122 ,  H01L21/02175

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

公开(公告)号：US11932940B2

公开(公告)日：2024-03-19

申请号：US17096341

申请日：2020-11-12

申请人： Applied Materials, Inc.

发明人： Keenan N. Woods ,  Cong Trinh ,  Mark Saly ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Lisa J. Enman

IPC分类号： C23C16/34 ,  C08K5/5475 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/768

CPC分类号： C23C16/45553 ,  C08K5/5475 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/76826

摘要： Silyl pseudohalides having a general formula of R4-nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

公开(公告)号：US20210032745A1

公开(公告)日：2021-02-04

申请号：US16935658

申请日：2020-07-22

申请人： Applied Materials, Inc.

发明人： Lisa J. Enman ,  Steven D. Marcus ,  Mark J. Saly ,  Lei Zhou

IPC分类号： C23C16/40 ,  C23C16/455

摘要： Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.

公开(公告)号：US20240003003A1

公开(公告)日：2024-01-04

申请号：US18368202

申请日：2023-09-14

申请人： Applied Materials, Inc.

发明人： Lisa J. Enman ,  Steven D. Marcus ,  Mark J. Saly ,  Lei Zhou

IPC分类号： C23C16/40 ,  C23C16/455

CPC分类号： C23C16/40 ,  C23C16/45553 ,  C23C16/45555

摘要： Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.

公开(公告)号：US11732356B2

公开(公告)日：2023-08-22

申请号：US16941843

申请日：2020-07-29

申请人： Applied Materials, Inc.

发明人： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC分类号： C23C16/455 ,  C23C16/02 ,  H01L21/56 ,  H10N70/00

CPC分类号： C23C16/45542 ,  C23C16/0209 ,  C23C16/45546 ,  C23C16/45553 ,  H01L21/56 ,  H10N70/023

摘要： Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.