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公开(公告)号:US10910238B2
公开(公告)日:2021-02-02
申请号:US15703666
申请日:2017-09-13
发明人: Kaushik Alayavalli , Ajit Balakrishna , Sanjeev Baluja , Amit Kumar Bansal , Matthew James Busche , Juan Carlos Rocha-Alvarez , Swaminathan T. Srinivasan , Tejas Ulavi , Jianhua Zhou
IPC分类号: H01L21/67 , H01L21/687
摘要: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.
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公开(公告)号:US11915913B2
公开(公告)日:2024-02-27
申请号:US18302854
申请日:2023-04-19
IPC分类号: G01D5/26 , H01J37/32 , H01L21/683 , C23C16/458 , G01L11/02 , G01D11/24
CPC分类号: H01J37/3244 , C23C16/4586 , H01J37/32009 , H01J37/3299 , H01J37/32697 , H01J37/32715 , H01L21/6831 , H01L21/6833 , G01D5/26 , G01D5/266 , G01D5/268 , G01D11/245 , G01L11/025 , H01J2237/334
摘要: Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support assembly has a puck having a workpiece support surface, a gas hole formed through the workpiece support surface, and a sensor assembly disposed in the gas hole. The substrate support assembly further has a transition conduit fluidly coupled to the gas hole, and a connection coupled to the transition conduit. The connection has a first opening fluidly coupled to the transition conduit and a second opening coupled to a control system, where the control system is coupled to the sensor assembly.
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公开(公告)号:US10403534B2
公开(公告)日:2019-09-03
申请号:US14536803
申请日:2014-11-10
发明人: Vijay D. Parkhe , Wendell Boyd, Jr. , Matthew James Busche , Konstantin Makhratchev , Masanori Ono , Senh Thach
IPC分类号: H01L21/67 , H01J37/32 , H01L21/683
摘要: Implementations described herein provide a pixelated substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a cooling base comprising the substrate support assembly, which in turn, allows both lateral and azimuthal tuning of a substrate processed on the substrate support assembly. A processing chamber having a pixelated substrate support assembly and method for processing a substrate using a pixelated substrate support assembly are also provided.
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公开(公告)号:US11676802B2
公开(公告)日:2023-06-13
申请号:US17095577
申请日:2020-11-11
IPC分类号: G01D5/26 , H01J37/32 , H01L21/683 , C23C16/458 , G01L11/02 , G01D11/24
CPC分类号: H01J37/3244 , C23C16/4586 , H01J37/32009 , H01J37/3299 , H01J37/32697 , H01J37/32715 , H01L21/6831 , H01L21/6833 , G01D5/26 , G01D5/266 , G01D5/268 , G01D11/245 , G01L11/025 , H01J2237/334
摘要: Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to provide the benefit of allowing gas to flow past the sensor assembly when positioned in the gas hole.
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公开(公告)号:US10460916B2
公开(公告)日:2019-10-29
申请号:US15979787
申请日:2018-05-15
发明人: Wendell Glenn Boyd, Jr. , Vijay D. Parkhe , Matthew James Busche , Konstantin Makhratchev , Masanori Ono , Senh Thach
IPC分类号: H05B33/00 , H01J37/32 , H01L21/683 , H01L21/66 , H01L21/67 , H01L21/687
摘要: Embodiments disclosed herein include a method for minimizing chucking forces on a workpiece disposed on a electrostatic chuck within a plasma processing chamber. The method begins by placing a workpiece on an electrostatic chuck in a processing chamber. A plasma is struck within the processing chamber. A deflection force is monitored on the workpiece. A chucking voltage is applied at a minimum value. A backside gas pressure is applied at a minimum pressure. The chucking voltage and or backside gas pressure is adjusted such that the deflection force is less than a threshold value. And the chucking voltage and the backside gas pressure are simultaneously ramped up.
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公开(公告)号:US09875923B2
公开(公告)日:2018-01-23
申请号:US15385441
申请日:2016-12-20
发明人: Wendell Boyd, Jr. , Vijay D. Parkhe , Matthew James Busche , Konstantin Makhratchev , Masanori Ono , Senh Thach
IPC分类号: H01L21/683 , H01L21/67
CPC分类号: H01L21/6833 , H01L21/67288
摘要: A control system that includes deflection sensors which can control clamping forces applied by electrostatic chucks, and related methods are disclosed. By using a sensor to determine a deflection of a workpiece supported by an electrostatic chuck, a control system may use the deflection measured to control a clamping force applied to the workpiece by the electrostatic chuck. The control system applies a clamping voltage to the electrostatic chuck so that the clamping force reaches and maintains a target clamping force. In this manner, the clamping force may secure the workpiece to the electrostatic chuck to enable manufacturing operations to be performed while preventing workpiece damage resulting from unnecessary higher values of the clamping force.
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