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17 条记录 (耗时 0.013 秒)

    Methods, systems, and apparatus for conducting chucking operations using an adjusted chucking voltage if a process shift occurs
    1.
    发明授权
    Methods, systems, and apparatus for conducting chucking operations using an adjusted chucking voltage if a process shift occurs 有权

    公开(公告)号：US11854911B2

    公开(公告)日：2023-12-26

    申请号：US17185415

    申请日：2021-02-25

    申请人： Applied Materials, Inc.

    发明人： Wendell Glenn Boyd, Jr. ,  Matthew Boyd

    IPC分类号： H01L21/66 ,  H01L21/687 ,  H01L21/683

    CPC分类号： H01L22/12 ,  H01L21/6833 ,  H01L21/68707

    摘要： Methods, systems, and apparatus for conducting chucking operations are disclosed that use an adjusted chucking voltage if a process shift occurs. In one implementation, a method includes conducting a first processing operation on a substrate in a processing chamber. The first processing operation includes applying a chucking voltage to an electrostatic chuck (ESC) in the processing chamber while the substrate is supported on the ESC. The method includes determining that a process shift has occurred. The determining that the process shift has occurred includes one or more of: determining that a center of the substrate has moved by a post-processing shift relative to a pre-processing location of the center prior to the first processing operation, or determining that a defect count of a backside surface of the substrate exceeds a defect threshold. The method includes determining an adjusted chucking voltage based on the occurrence of the process shift.

    Substrate distance monitoring
    2.
    发明授权
    Substrate distance monitoring 有权

    公开(公告)号：US10648788B2

    公开(公告)日：2020-05-12

    申请号：US15591902

    申请日：2017-05-10

    申请人： Applied Materials, Inc.

    发明人： Wendell Glenn Boyd, Jr. ,  Govinda Raj

    IPC分类号： C23C16/40 ,  G01B9/02 ,  G01B11/14 ,  H01J37/32 ,  H01L21/67

    摘要： Embodiments disclosed herein include a faceplate having a sensor assembly, a processing chamber having the same, and a method for monitoring a substrate in a processing chamber. In one embodiment, a faceplate is configured to introduce processing gases into a plasma processing chamber. The faceplate has one or more holes. A sensor assembly is disposed in the one or more holes. The sensor assembly has a sensor and a controller.

    Forming mesas on an electrostatic chuck
    3.
    发明授权
    Forming mesas on an electrostatic chuck 有权

    公开(公告)号：US12074052B2

    公开(公告)日：2024-08-27

    申请号：US18206931

    申请日：2023-06-07

    申请人： Applied Materials, Inc.

    发明人： Wendell Glenn Boyd, Jr. ,  Stanley Wu ,  Matthew Boyd

    IPC分类号： H01L21/683 ,  C23C16/02 ,  C23C16/30 ,  C23C16/458

    CPC分类号： H01L21/6833 ,  C23C16/0227 ,  C23C16/308 ,  C23C16/4583

    摘要： A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 GPa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.

    Forming mesas on an electrostatic chuck
    4.
    发明授权
    Forming mesas on an electrostatic chuck 有权

    公开(公告)号：US11699611B2

    公开(公告)日：2023-07-11

    申请号：US17183179

    申请日：2021-02-23

    申请人： Applied Materials, Inc.

    发明人： Wendell Glenn Boyd, Jr. ,  Stanley Wu ,  Matthew Boyd

    IPC分类号： H01L21/683 ,  C23C16/458 ,  C23C16/30 ,  C23C16/02

    CPC分类号： H01L21/6833 ,  C23C16/0227 ,  C23C16/308 ,  C23C16/4583

    摘要： A body of an electrostatic chuck comprises mesas disposed on a polished surface of the body. Each of the mesas comprises an adhesion layer disposed on the polished surface of the body, a transition layer disposed over the adhesion layer, and a coating layer disposed over the transition layer. The coating layer has a hardness of at least 14 Gpa. The body further comprises a sidewall coating disposed over a sidewall of the body. A method for preparing the body comprises polishing the surface of the body and cleaning the polished surface. The method further comprises depositing the mesas by depositing the adhesion layer on the body, the transition layer over the adhesion layer, and the coating layer over the transition layer. Further, the method includes, polishing the mesas.