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    Oxidation reduction for SiOC film
    5.
    发明授权
    Oxidation reduction for SiOC film 有权

    公开(公告)号：US11133177B2

    公开(公告)日：2021-09-28

    申请号：US16673943

    申请日：2019-11-04

    Applicant: Applied Materials, Inc.

    Inventor： Martin Jay Seamons ,  Michael Wenyoung Tsiang ,  Jingmei Liang

    IPC: H01L21/02 ,  C23C16/50 ,  C23C16/40 ,  C23C16/04

    Abstract: Embodiments described herein generally related to methods for forming a flowable low-k dielectric layer over a trench formed on a surface of a patterned substrate. The methods include delivering a silicon and carbon containing precursor into a substrate processing region of a substrate processing chamber for a first period of time and a second period of time, flowing an oxygen-containing precursor into a remote plasma region of a plasma source while igniting a remote plasma to form a radical-oxygen precursor, flowing the radical-oxygen precursor into the substrate processing region at a second flow rate after the first period of time has elapsed and during the second period of time, and exposing the silicon and carbon containing dielectric precursor to electromagnetic radiation for a third period of time after the second period of time has elapsed.

    Method of dielectric material fill and treatment
    6.
    发明授权
    Method of dielectric material fill and treatment 有权

    公开(公告)号：US11615984B2

    公开(公告)日：2023-03-28

    申请号：US16848784

    申请日：2020-04-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Shi You ,  He Ren ,  Naomi Yoshida ,  Nikolaos Bekiaris ,  Mehul Naik ,  Martin Jay Seamons ,  Jingmei Liang ,  Mei-Yee Shek

    IPC: H01L21/768 ,  H01L21/02 ,  H01L21/67

    Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material.

    Cure method for cross-linking Si-hydroxyl bonds
    8.
    发明授权
    Cure method for cross-linking Si-hydroxyl bonds 有权

    公开(公告)号：US11090683B2

    公开(公告)日：2021-08-17

    申请号：US16692841

    申请日：2019-11-22

    Applicant: Applied Materials, Inc.

    Inventor： Martin Jay Seamons ,  Byung Kook Ahn ,  Jingmei Liang

    IPC: B05D1/00 ,  B05D3/06 ,  C23C16/56

    Abstract: Embodiments described herein provide a method of forming a silicon-and-oxygen-containing layer having covalent Si—O—Si bonds by cross-linking terminal silanol groups. The method includes positioning a substrate in a chamber. The substrate has one or more trenches including a width of 10 nanometers (nm) or less, and an aspect ratio of 2:1 or greater. The aspect ratio is defined by a ratio of a depth to the width of the one or more trenches. A silicon-and-oxygen-containing layer is disposed over the one or more trenches. The silicon-and-oxygen-containing layer has terminal silanol groups. The substrate is heated, and the silicon-and-oxygen-containing layer is exposed to an ammonia or amine group-containing precursor distributed across a process volume.

    Methods of dry stripping boron-carbon films
    9.
    发明授权
    Methods of dry stripping boron-carbon films 有权

    公开(公告)号：US10510518B2

    公开(公告)日：2019-12-17

    申请号：US14934923

    申请日：2015-11-06

    Applicant: Applied Materials, Inc.

    Inventor： Kwangduk Douglas Lee ,  Sudha Rathi ,  Ramprakash Sankarakrishnan ,  Martin Jay Seamons ,  Irfan Jamil ,  Bok Hoen Kim

    IPC: H01L21/02 ,  H01J37/32 ,  G03F7/42 ,  H01L21/311 ,  B08B7/00

    Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

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