公开(公告)号：US20240133029A1

公开(公告)日：2024-04-25

申请号：US18279082

申请日：2022-03-10

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Takahiro SAKATSUME ,  Hiroshi HASHIGAMI

IPC分类号： C23C16/455 ,  C23C16/08 ,  C23C16/458

CPC分类号： C23C16/455 ,  C23C16/08 ,  C23C16/4588

摘要： A film formation device which forms a film on a substrate through the heat treatment of a starting material solution in the form of a mist, the film formation device including a mist conversion unit that generates a mist by converting the starting material solution into mist, a carrier gas supply unit that supplies a carrier gas for transporting the mist generated by the mist conversion unit, a film formation unit that includes therein a placement part for placing the substrate and that is where the mist transported by the carrier gas is supplied onto the substrate, and an exhaust unit that exhausts exhaust gas from the film formation unit, and further including, above the placement part in the film formation unit, a nozzle for supplying the mist onto the substrate and a top plate for adjusting the flow of the mist supplied from the nozzle.

公开(公告)号：US11950384B2

公开(公告)日：2024-04-02

申请号：US18103812

申请日：2023-01-31

申请人： Applied Materials, Inc.

发明人： Akshay Gunaji ,  Uday Pai ,  Timothy J. Roggenbuck ,  Sanjeev Baluja ,  Kalesh Panchaxari Karadi ,  Tejas Ulavi

IPC分类号： H05K5/02 ,  C23C16/455 ,  C23C16/458 ,  H02G3/04

CPC分类号： H05K5/0247 ,  C23C16/45544 ,  C23C16/4588 ,  H02G3/0437 ,  C23C16/4586

摘要： Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：US20230193465A1

公开(公告)日：2023-06-22

申请号：US18171903

申请日：2023-02-21

申请人： Kokusai Electric Corporation

发明人： Hideto TATENO ,  Yusaku OKAJIMA ,  Yoshinori IMAI ,  Hiroki HATTA

IPC分类号： C23C16/458 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/4588 ,  C23C16/52 ,  C23C16/455

摘要： According to one aspect of the technique of the present disclosure, there is provided a substrate processing method including: accommodating a substrate retainer in a process chamber, including: a substrate support; and a partition plate support capable of supporting an upper partition plate provided above a substrate supported by the substrate support; setting a distance between the substrate and the upper partition plate to a first gap; supplying a first gas to the substrate through a gas supply port in a state where the distance between the substrate and the upper partition plate is maintained at the first gap; setting the distance between the substrate and the upper partition plate to a second gap; and supplying a second gas to the substrate through the gas supply port in a state where the distance between the substrate and the upper partition plate is maintained at the second gap.

公开(公告)号：US20230187188A1

公开(公告)日：2023-06-15

申请号：US18164085

申请日：2023-02-03

申请人： Kokusai Electric Corporation

发明人： Tsuyoshi TAKEDA ,  Daisuke Hara

IPC分类号： H01J37/32 ,  C23C16/52 ,  C23C16/458

CPC分类号： H01J37/32724 ,  H01J37/32568 ,  H01J37/32449 ,  C23C16/52 ,  C23C16/4588 ,  H01J2237/3323

摘要： There is provided a technique that includes: a process chamber that processes a plurality of substrates; a substrate holder on which the plurality of substrates is supported; an electrode that forms plasma in the process chamber, and auxiliary plate that is disposed between the plurality of substrates and assists formation of the plasma.

公开(公告)号：US20150086715A1

公开(公告)日：2015-03-26

申请号：US14237577

申请日：2012-07-30

申请人： Raymond Jacobus Wilhelmus Knaapen ,  Ruud Olieslagers ,  Dennis Van Den Berg ,  Matijs C. Van Den Boer ,  Diederik Jan Maas ,  Jacques Cor Johan Van Der Donck ,  Freddy Roozeboom

发明人： Raymond Jacobus Wilhelmus Knaapen ,  Ruud Olieslagers ,  Dennis Van Den Berg ,  Matijs C. Van Den Boer ,  Diederik Jan Maas ,  Jacques Cor Johan Van Der Donck ,  Freddy Roozeboom

IPC分类号： C23C16/455 ,  C23C16/52

CPC分类号： C23C16/45589 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/4586 ,  C23C16/4588 ,  C23C16/52 ,  C23C16/545

摘要： Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory

摘要翻译： 在基板上沉积原子层的方法。 该方法包括从可以是可旋转滚筒的一部分的沉积头的前体气体供应源供应前体气体。 前体气体从前体气体供应源朝向基底提供。 该方法还包括通过沿着衬底旋转沉积头来移动前体气体源，衬底又沿旋转鼓移动。 该方法还包括在旋转轨迹的第一部分上将来自前体气体供应的前体气体供给朝向基底的切换; 并且中断在旋转轨迹的第二部分上从前体气体供应源提供前体气体

公开(公告)号：US20150037499A1

公开(公告)日：2015-02-05

申请号：US14445736

申请日：2014-07-29

申请人： Solid State Equipment LLC

发明人： William Gilbert Breingan ,  James K. Anders ,  Herman Itzkowitz

IPC分类号： H01L21/683 ,  B05C11/08 ,  B05C13/00 ,  B05D1/00

CPC分类号： B05C13/00 ,  B05C1/08 ,  B05D1/005 ,  C23C14/505 ,  C23C16/4585 ,  C23C16/4588 ,  H01L21/6838 ,  H01L21/68792

摘要： A spin chuck according to the present invention is provided and is configured to eliminate the wrap of chemical over the wafer edge. The dual speed wafer spin chuck apparatus acts to prevent liquids from affecting the backside of a wafer during processing. An outer ring is placed around the wafer with a narrow gap between the two such that drops of liquid on the surface of the wafer will touch the outer ring as they move to the outermost edge of the wafer. By spinning this outer ring at high speed, centrifugal force causes these drops to be pulled off of the wafer and flung radially outward, thus preventing the liquid from affecting the backside of the wafer,

摘要翻译： 提供了根据本发明的旋转卡盘，并且被配置为消除化学品在晶片边缘上的包裹。 双速晶片旋转卡盘装置用于防止液体在加工期间影响晶片的背面。 在晶片周围放置一个外环，其间具有窄的间隙，使得当晶片表面移动到晶片的最外边缘时，晶片表面上的液滴将接触外环。 通过高速旋转该外圈，离心力使这些液滴从晶片上拉出并径向向外排出，从而防止液体影响晶片的背面，

公开(公告)号：US20110283941A1

公开(公告)日：2011-11-24

申请号：US12963445

申请日：2010-12-08

申请人： Yan Rozenzon ,  Robert T. Trujillo ,  Steven C. Beese

发明人： Yan Rozenzon ,  Robert T. Trujillo ,  Steven C. Beese

IPC分类号： C23C16/00 ,  B05C13/00

CPC分类号： C23C16/4588 ,  C23C16/24 ,  C30B29/06 ,  C30B35/005

摘要： One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.

摘要翻译： 本发明的一个实施例提供了用于承载晶片的沉积室中使用的晶片载体系统。 晶片载体系统包括嵌入在基座内部的基座和顶部基座，其底部基座的晶片安装侧面向基座的晶片安装侧，从而形成基本封闭的窄通道。 基座为顶部感受器提供向上的支撑。

公开(公告)号：US20110206485A1

公开(公告)日：2011-08-25

申请号：US13059890

申请日：2009-08-21

申请人： Eduard Renier Francisca Clerkx ,  Ernst Dullemeijer ,  Franciscus Cornelius Dings

发明人： Eduard Renier Francisca Clerkx ,  Ernst Dullemeijer ,  Franciscus Cornelius Dings

IPC分类号： B65G17/12 ,  B65G47/00

CPC分类号： B65G47/646 ,  B65G47/644 ,  B65G47/645 ,  B65G49/064 ,  B65G2249/02 ,  C23C14/505 ,  C23C14/562 ,  C23C16/4588 ,  C23C16/545 ,  H01L21/67173 ,  H01L21/67271 ,  H01L21/67748 ,  Y10S414/139

摘要： A conveyor assembly suitable for use in a substrate processing system includes: at least one substrate carrier having a substrate-carrying surface configured to support at least one substrate; a processing track; a return track; a drive system configured to drive the substrate carrier along the processing track and the return track; and at least one swivel unit configured to pivot the substrate carrier around a substantially horizontal axis from a first orientation into a second orientation, and/or vice versa. Also provided is a method for conveying a substrate carrier including: providing a substrate carrier; positioning the substrate carrier in a first orientation; conveying the substrate carrier along a first track; and rotating the substrate carrier around a substantially horizontal axis into a second orientation.

摘要翻译： 适用于基板处理系统的输送机组件包括：至少一个基板载体，其具有构造成支撑至少一个基板的基板承载表面; 加工轨道 返回轨道 驱动系统，被配置为沿着所述处理轨道和所述返回轨道驱动所述衬底载体; 以及至少一个旋转单元，其构造成将基板载体围绕基本水平的轴线从第一取向枢转到第二取向，和/或反之亦然。 还提供了一种用于输送基板载体的方法，包括：提供基板载体; 将衬底载体定位在第一取向; 沿着第一轨道传送所述衬底载体; 以及将基底载体围绕基本上水平的轴线旋转成第二取向。

公开(公告)号：US07462246B2

公开(公告)日：2008-12-09

申请号：US11107444

申请日：2005-04-15

申请人： Lance G. Hellwig

发明人： Lance G. Hellwig

IPC分类号： C23C16/00

CPC分类号： C30B25/12 ,  C23C16/4588 ,  Y10S156/917

摘要： A susceptor for supporting wafers during an chemical vapor deposition process. The susceptor has recesses and orifices disposed in the recesses extending to a central passage of the susceptor. The susceptor has exhaust openings disposed in the top of the susceptor to allow gas from the central passage of the susceptor to exit out the openings. A baffle plate covers the exhaust openings and a vertical space is created between the baffle plate and the top of the susceptor to allow gas to exit from the central passage to outside the susceptor. The bottom of the susceptor also has exhaust openings disposed therein. These openings allow gas from the central passage to exit the susceptor.

摘要翻译： 用于在化学气相沉积工艺期间支撑晶片的感受体。 基座具有设置在延伸到基座的中心通道的凹部中的凹部和孔口。 基座具有设置在基座顶部的排气口，以允许来自基座的中心通道的气体从出口排出。 挡板覆盖排气口，并且在挡板和基座的顶部之间形成垂直空间，以允许气体从中心通道离开基座的外部。 基座的底部还具有设置在其中的排气口。 这些开口允许来自中央通道的气体离开基座。

公开(公告)号：US20080268170A1

公开(公告)日：2008-10-30

申请号：US11002611

申请日：2004-12-02

申请人： Fu-Jann Pern ,  Kenell J. Touryan ,  Zhozef Retevos Panosyan ,  Aleksey Alekseyevich Gippius

发明人： Fu-Jann Pern ,  Kenell J. Touryan ,  Zhozef Retevos Panosyan ,  Aleksey Alekseyevich Gippius

IPC分类号： H05H1/24 ,  H05H1/02

CPC分类号： H01J37/3233 ,  C23C16/26 ,  C23C16/4584 ,  C23C16/4588 ,  H01J37/04 ,  H01J37/3178 ,  H01J37/32009 ,  H01J37/32935 ,  Y10S427/106

摘要： Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.

摘要翻译： 光伏太阳能电池表面的类金刚石碳（DLC）膜的离子辅助等离子体增强沉积是用用于控制离子能量的方法和装置完成的。 DLC层的质量通过适当偏置的特殊电极系统和进料气体混合物组成的精确控制进行微调。 均匀（光学参数不均匀度小于5％）大面积（大于110cm 2）具有光学参数的DLC膜在给定范围内变化，并且具有稳定性，防止 实现环境。