发明公开
- 专利标题： SEMICONDUCTOR SUBSTRATE
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申请号： US18307798申请日： 2023-04-27
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公开(公告)号： US20240079244A1公开(公告)日： 2024-03-07
- 发明人: Mitsuhiko OGIHARA
- 申请人： FILNEX INC.
- 申请人地址： JP Tokyo
- 专利权人： FILNEX INC.
- 当前专利权人： FILNEX INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP 18035221 2018.02.28
- 分案原申请号： US17477538 2021.09.17
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/02 ; H01L21/20
摘要：
A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such that a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.
公开/授权文献
- US12068166B2 Semiconductor substrate 公开/授权日：2024-08-20
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