公开(公告)号：US11152216B2

公开(公告)日：2021-10-19

申请号：US17002781

申请日：2020-08-26

Applicant: FILNEX INC.

Inventor： Mitsuhiko Ogihara

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/20

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a fixing layer that is a thin film for coupling at least a portion of a main surface of the semiconductor thin film layer on the side opposite to a base material substrate side and at least a portion of the surface of the base material substrate on a semiconductor thin film layer side, forming a void by removing a partial region of the semiconductor thin film layer or the base material substrate, coupling an organic material layer formed on a pick-up substrate to the fixing layer after forming the void, separating the semiconductor thin film layer from the first substrate by moving the pick-up substrate away from the base material substrate with the organic material layer bonded to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate.

公开(公告)号：US20240312779A1

公开(公告)日：2024-09-19

申请号：US18677887

申请日：2024-05-30

Applicant: FILNEX INC.

Inventor： Mitsuhiko OGIHARA ,  Akihiro HASHIMOTO

IPC: H01L21/02 ,  H01L21/67 ,  H01L29/34

CPC classification number: H01L21/02444 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/67098 ,  H01L29/34

Abstract: A semiconductor substrate manufacturing method includes the steps of: forming, on a first surface of a first substrate, a plurality of terrace portions arranged in a first direction parallel to a horizontal plane of the first substrate, and a step portion having a predetermined height between two adjacent terrace portions in the first direction; forming a first semiconductor layer such that a part of the step portion is exposed; and vaporizing a portion of Si of the first substrate from a part of the step portion exposed from the first semiconductor layer by performing heat treatment on the first substrate on which the first semiconductor layer is formed, thereby forming a buffer layer having at least one graphene layer in at least a part between the first semiconductor layer and the first substrate.

公开(公告)号：US20240120238A1

公开(公告)日：2024-04-11

申请号：US18536188

申请日：2023-12-11

Applicant: FILNEX INC.

Inventor： Mitsuhiko OGIHARA

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/683

CPC classification number: H01L21/7806 ,  H01L21/30621 ,  H01L21/6835 ,  H01L21/02392

Abstract: A semiconductor substrate includes: a base substrate; a removal layer, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer provided above the removal layer; and a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer. The thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member.

公开(公告)号：US20210280467A1

公开(公告)日：2021-09-09

申请号：US17330369

申请日：2021-05-25

Applicant: FILNEX INC.

Inventor： Mitsuhiko OGIHARA

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/683

Abstract: To prevent the surface of a base substrate and the bottom surface of a separated semiconductor epitaxial layer from being bonded to each other even after a removal layer is removed, the semiconductor substrate includes a base substrate, a first removal layer provided on the base substrate, a second removal layer provided above the first removal layer, and a semiconductor epitaxial layer provided above the second removal layer, and an etching rate of the second removal layer for a predetermined etching material is larger than the etching rate of the first removal layer for the predetermined etching material.

公开(公告)号：US20240079244A1

公开(公告)日：2024-03-07

申请号：US18307798

申请日：2023-04-27

Applicant: FILNEX INC.

Inventor： Mitsuhiko OGIHARA

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/20

CPC classification number: H01L21/306 ,  H01L21/02112 ,  H01L21/02667 ,  H01L21/20

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such that a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.

公开(公告)号：US11670514B2

公开(公告)日：2023-06-06

申请号：US17477538

申请日：2021-09-17

Applicant: FILNEX INC.

Inventor： Mitsuhiko Ogihara

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/20

CPC classification number: H01L21/306 ,  H01L21/02112 ,  H01L21/02667 ,  H01L21/20

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such lhat a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.

公开(公告)号：US20220005699A1

公开(公告)日：2022-01-06

申请号：US17477538

申请日：2021-09-17

Applicant: FILNEX INC.

Inventor： Mitsuhiko OGIHARA

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/20

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a fixing layer, coupling a third substrate different from the first substrate and the second substrate to the fixing layer, separating the semiconductor thin film layer from the first substrate by moving the third substrate away from the base material substrate with the third substrate coupled to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate, wherein the forming the fixing layer forms the fixing layer having a thickness such lhat a crack is generated between the fixing layer formed on the first substrate and the fixing layer formed on a side surface of the semiconductor thin film layer by a force for moving the third substrate.

公开(公告)号：US20210210344A1

公开(公告)日：2021-07-08

申请号：US17211871

申请日：2021-03-25

Applicant: FILNEX INC.

Inventor： Mitsuhiko OGIHARA

IPC: H01L21/02 ,  H01L21/78 ,  H01L21/683

Abstract: A method for manufacturing a semiconductor device and a semiconductor substrate are provided. A method for manufacturing a semiconductor device includes the steps of forming a bonding layer that bonds a semiconductor thin film to a bonding layer region on a portion of a first substrate with a force weaker than covalent bonding, forming the semiconductor thin film in the bonding layer region and a non-bonding layer region other than the bonding layer region, separating the semiconductor thin film from the first substrate by bonding an organic layer included in a pick-up substrate different from the first substrate to the semiconductor thin film, removing the bonding layer adhered to a peeled surface of the semiconductor thin film separated from the first substrate, and bonding the semiconductor thin film from which the bonding layer has been removed to a second substrate different from the first substrate.

公开(公告)号：US12183636B2

公开(公告)日：2024-12-31

申请号：US18536188

申请日：2023-12-11

Applicant: FILNEX INC.

Inventor： Mitsuhiko Ogihara

IPC: H01L21/78 ,  H01L21/306 ,  H01L21/683 ,  H01L21/02

Abstract: A semiconductor substrate includes: a base substrate; a removal layer, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer provided above the removal layer; and a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer. The thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member.

公开(公告)号：US12136569B2

公开(公告)日：2024-11-05

申请号：US17581990

申请日：2022-01-24

Applicant: FILNEX INC.

Inventor： Mitsuhiko Ogihara

IPC: H01L21/78 ,  H01L21/67

Abstract: A method for manufacturing a semiconductor device includes the steps of a first separation process of separating the semiconductor layer from the first substrate by bringing a pick-up substrate into close contact with the semiconductor layer and then moving the pick-up substrate away from the first substrate, pressing of pressing the semiconductor layer that is in close contact with the pick-up substrate to the second substrate, temperature maintenance of maintaining temperatures of contact surfaces of the semiconductor layer and the second substrate at a temperature higher than room temperature while pressing the semiconductor layer onto the second substrate, and a second separation process of separating the semiconductor layer from the pick-up substrate after the temperatures of the contact surfaces are maintained at the temperature higher than room temperature.