公开(公告)号：US12040179B2

公开(公告)日：2024-07-16

申请号：US15073084

申请日：2016-03-17

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takaaki Noda ,  Kotaro Konno ,  Shingo Nohara ,  Takeo Hanashima

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/45534 ,  C23C16/45542 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/0228

摘要： A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

公开(公告)号：US10062562B2

公开(公告)日：2018-08-28

申请号：US15010333

申请日：2016-01-29

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takaaki Noda ,  Kotaro Konno

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/46 ,  C23C16/52 ,  H01L21/67 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/02271 ,  C23C16/30 ,  C23C16/4408 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/67109 ,  H01L21/67248

摘要： According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.

公开(公告)号：US09831082B2

公开(公告)日：2017-11-28

申请号：US15013721

申请日：2016-02-02

申请人： Hitachi Kokusai Electric Inc.

发明人： Satoshi Shimamoto ,  Takaaki Noda ,  Takeo Hanashima ,  Yoshiro Hirose ,  Hiroshi Ashihara ,  Tsukasa Kamakura ,  Shingo Nohara

IPC分类号： H01L21/02 ,  H01L21/67 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/02126 ,  C23C16/30 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02238 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/02359 ,  H01L21/67109

摘要： A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing H2O and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (CxHy-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.

公开(公告)号：US09263251B2

公开(公告)日：2016-02-16

申请号：US14681055

申请日：2015-04-07

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Norikazu Mizuno ,  Tomohide Kato ,  Takaaki Noda

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232

CPC分类号： H01L27/14685 ,  C23C16/40 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45555 ,  C23C16/45557 ,  C23C16/52 ,  H01L21/02172 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/1462 ,  H01L27/14627 ,  H01L31/0216 ,  H01L31/02161 ,  H01L31/02327

摘要： An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

公开(公告)号：US09153430B2

公开(公告)日：2015-10-06

申请号：US13725953

申请日：2012-12-21

申请人： Hitachi Kokusai Electric Inc.

发明人： Takaaki Noda ,  Jie Wang

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01L21/673 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02263 ,  C23C16/402 ,  C23C16/45514 ,  C23C16/45578 ,  H01L21/673

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes: a process chamber configured to accommodate a substrate; a substrate holding member configured to hold the substrate in the process chamber; a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber; a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber, wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括：处理室，其构造成容纳基板; 衬底保持构件，其构造成将衬底保持在处理室中; 第一气体供应系统，包括用于将第一处理气体供应到处理室中的第一气体供应孔; 第二气体供给系统，包括用于将第二处理气体供给到所述处理室中的第二气体供给孔; 以及催化剂供给系统，其具有用于向所述处理室供给催化剂的催化剂供给孔，其中，连接所述基板保持部件的中心的第一假想线与所述第一气体供给孔之间的角度与连接所述基板保持部件的中心的第二假想线 基板保持部件和催化剂供给孔的范围为63.5度〜296.5度。

公开(公告)号：US09673043B2

公开(公告)日：2017-06-06

申请号：US15084847

申请日：2016-03-30

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takaaki Noda ,  Shingo Nohara ,  Satoshi Shimamoto ,  Hiroshi Ashihara ,  Takeo Hanashima ,  Yoshiro Hirose ,  Tsukasa Kamakura

IPC分类号： H01L21/469 ,  H01L21/02 ,  C23C16/30 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/401 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02318

摘要： There is provided a technique including: (a) forming a thin film containing a predetermined element, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element, carbon and a halogen element having a chemical bond between the predetermined element and carbon to the substrate; (a-2) supplying an oxidizing gas to the substrate; and (a-3) supplying a catalytic gas to the substrate; (b) removing a first impurity from the thin film by thermally processing the thin film at a first temperature higher than a temperature of the substrate in (a); and (c) removing a second impurity different from the first impurity from the thin film by thermally processing the thin film at a second temperature equal to or higher than the first temperature after performing (b).

公开(公告)号：US09472391B2

公开(公告)日：2016-10-18

申请号：US14230416

申请日：2014-03-31

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Satoshi Shimamoto ,  Yoshiro Hirose ,  Atsushi Sano ,  Tsukasa Kamakura ,  Takaaki Noda

IPC分类号： C23C16/32 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/45534 ,  C23C16/45536 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337

摘要： A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding and a first catalytic gas to the substrate; supplying an oxidizing gas and a second catalytic gas to the substrate; and supplying a modifying gas containing the specified Group III or Group V element to the substrate.

摘要翻译： 半导体器件制造方法包括通过执行预定次数的循环，在衬底上形成含有硅，氧，碳和指定的III族或V族元素的薄膜。 该循环包括：向衬底供给含硅，碳和卤素元素的前体气体并具有Si-C键和第一催化气体; 向所述基板供给氧化气体和第二催化气体; 并将含有规定的III族或V族元素的改性气体供给至基材。

公开(公告)号：US09123531B2

公开(公告)日：2015-09-01

申请号：US14248961

申请日：2014-04-09

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Norikazu Mizuno ,  Tomohide Kato ,  Takaaki Noda

IPC分类号： H01L31/0216 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01L27/146 ,  H01L31/0232

CPC分类号： H01L27/14685 ,  C23C16/40 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45555 ,  C23C16/45557 ,  C23C16/52 ,  H01L21/02172 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/1462 ,  H01L27/14627 ,  H01L31/0216 ,  H01L31/02161 ,  H01L31/02327

摘要： An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

摘要翻译： 在低温下形成能够抑制透镜反射的氧化膜。 一种制造半导体器件的方法包括：通过执行预定次数的循环，在衬底上形成含金属的氧化膜，所述循环包括：（a）向所述衬底供应含金属的源; （b）向基板供应氧化源; 和（c）向基材供应催化剂。

公开(公告)号：US20150044880A1

公开(公告)日：2015-02-12

申请号：US14388160

申请日：2013-03-25

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takaaki Noda ,  Takeo Hanashima

IPC分类号： H01L21/02 ,  C23C16/46 ,  C23C16/52 ,  C23C16/50

CPC分类号： H01L21/0234 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/463 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31111

摘要： A method of manufacturing a semiconductor device is provided, which enables the film quality to be improved when the film is formed on a substrate at a low temperature, thus forming fine patterns. The method of manufacturing a semiconductor device includes: forming the film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature by heating; and modifying the film by supplying a modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature.

摘要翻译： 提供了一种制造半导体器件的方法，当薄膜在低温下形成在基板上时，能够提高膜质量，从而形成精细图案。 制造半导体器件的方法包括：通过交替地将至少一种源气体和反应性气体供给到衬底而在衬底上形成膜，同时通过加热将衬底保持在第一温度; 并且通过将由等离子体激发的改性气体与其上形成的膜一起提供给基板，同时将其上形成有膜的基板自然冷却至第二温度而不加热基板，从而对膜进行改性，第二温度低于第一温度。

公开(公告)号：US20130305991A1

公开(公告)日：2013-11-21

申请号：US13948760

申请日：2013-07-23

申请人： Hitachi Kokusai Electric Inc.

发明人： Kiyohisa Ishibashi ,  Atsushi Moriya ,  Takaaki Noda ,  Kiyohiko Maeda

IPC分类号： H01L21/02

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/4583 ,  H01L21/02381 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/67781

摘要： A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.

摘要翻译： 一种制造半导体器件的方法包括：传送具有绝缘体区域的相对表面的第一基板和暴露在绝缘体区域之间的半导体区域和设置有朝向第一基板的相对表面暴露的绝缘体表面的第二基板， 处理室，其处于第二基板布置成面对第一基板的相对表面的状态，并且通过加热至少在第一基板的相对表面的半导体区域上选择性地形成具有平坦表面的含硅膜 处理室的内部，并且至少将含硅气体和含氯气体供应到处理室中。