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公开(公告)号：US20220196879A1
公开(公告)日：2022-06-23
申请号：US17691566
申请日：2022-03-10
发明人： Chang-Koo KIM , Jun-Hyun KIM
IPC分类号： G02B1/11 , H01L31/054 , H01L33/46 , H01L31/0236 , H01L31/028 , G02B1/12 , G02B5/02 , H01L33/44 , H01L31/18
摘要： The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
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公开(公告)号：US20190049628A1
公开(公告)日：2019-02-14
申请号：US16057128
申请日：2018-08-07
发明人： Chang-Koo KIM , Jun-Hyun KIM
IPC分类号： G02B1/11 , H01L31/054 , H01L31/028 , H01L31/0236 , H01L33/46
摘要： The present disclosure provides a structure having a low reflectance surface, wherein the structure comprises: a base plate; and a plurality of inclined rods protruding from a first face of the base plate and inclined relative to a normal line to the first face, wherein the inclined rods are spaced from each other. Travel paths of light beams in the structure may be longer along the inclined rods. As a result, a larger amount of light may be absorbed by the structure having a low reflectance surface. The amount of light-beams as reflected from the structure having a low reflectance surface may be significantly reduced.
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公开(公告)号：US20180166289A1
公开(公告)日：2018-06-14
申请号：US15580370
申请日：2016-06-07
发明人： Chang-Koo KIM , Sung-Woon CHO , Jun-Hyun KIM , Jeong-Geun BAK
IPC分类号： H01L21/3065 , H01L21/033 , H01L21/02 , B32B33/00
CPC分类号： H01L21/3065 , B32B33/00 , B32B2307/73 , B32B2307/732 , B32B2457/14 , B81B1/008 , B81B2201/055 , B81B2203/0361 , B81B2207/056 , B81C1/00031 , B81C1/00111 , B81C1/00206 , B81C1/00214 , B81C1/00531 , B81C1/00539 , B82Y40/00 , C09D5/00 , C09K13/00 , H01L21/02112 , H01L21/0334
摘要： The present invention relates to a method for producing a super-hydrophobic surface, and to a stack having a super-hydrophobic surface prepared by the above method. The super-hydrophobic surface may be realized only by plasma etching and deposition. The super-hydrophobic surface according to the present invention has a very low work of adhesion less than or equal to 3 mJ/m2. This super-hydrophobic surface may be applied to various fields including self-cleaning surface, anti-fogging surface, automobile glass surface, and drug delivery device surface.
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公开(公告)号：US20240006186A1
公开(公告)日：2024-01-04
申请号：US18036932
申请日：2021-07-28
发明人： Chang-Koo KIM , Jun-Hyun KIM , Sang-Hyun YOU
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32449 , H01J37/32522 , H01L21/31122 , H01J2237/334
摘要： Disclosed is a plasma etching method. The method includes a first step of vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mcc3, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed; and a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.
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公开(公告)号：US20230197466A1
公开(公告)日：2023-06-22
申请号：US17923495
申请日：2021-03-02
发明人： Chang-Koo KIM , Jun-Hyun KIM
IPC分类号： H01L21/311 , H01L21/02 , H01J37/32
CPC分类号： H01L21/31116 , H01L21/02164 , H01J37/32449 , H01L21/31144 , H01J2237/3341
摘要： Disclosed is a plasma etching method. The plasma etching method comprises: a first step for evaporating liquid perfluoropropyl carbinol (PPC); a second step for supplying a discharge gas including the evaporated PPC and argon gas to a plasma chamber in which an object to be etched is arranged; and a third step for discharging the discharge gas to generate plasma, and using the plasma to plasma-etch the object to be etched.
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公开(公告)号：US20230162972A1
公开(公告)日：2023-05-25
申请号：US17917155
申请日：2021-02-18
发明人： Chang-Koo KIM , Jun-Hyun KIM
IPC分类号： H01L21/02 , H01L21/311
CPC分类号： H01L21/02164 , H01L21/31116 , H01L21/31144 , H01J37/32009
摘要： A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.
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公开(公告)号：US20230178341A1
公开(公告)日：2023-06-08
申请号：US17923123
申请日：2021-03-02
发明人： Chang-Koo KIM , Jun-Hyun KIM
IPC分类号： H01J37/32 , H01L21/311
CPC分类号： H01J37/32449 , H01L21/31116 , H01J2237/334
摘要： A plasma etching method is disclosed. The plasma etching method comprises: a first step for vaporizing liquid pentafluoropropanol (PFP); a second step for supplying discharge gas comprising the vaporized PFP and argon gas into a plasma chamber in which an object to be etched is placed; and a third step for discharging the discharge gas to generate plasma and etching the object by using the plasma.
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公开(公告)号：US20200048550A1
公开(公告)日：2020-02-13
申请号：US16538134
申请日：2019-08-12
发明人： Chang-Koo KIM , Jun-Hyun KIM , Jin-Su PARK
IPC分类号： C09K13/00 , H01L21/311 , H01L21/67
摘要： Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
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公开(公告)号：US20200035502A1
公开(公告)日：2020-01-30
申请号：US16521701
申请日：2019-07-25
发明人： Chang-Koo KIM , Jun-Hyun KIM , Jin-Su PARK
IPC分类号： H01L21/311 , C09K13/08
摘要： Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
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公开(公告)号：US20240141530A1
公开(公告)日：2024-05-02
申请号：US18288502
申请日：2022-03-08
发明人： Chang-Koo KIM , Jun-Hyun KIM , Sanghyun YOU
CPC分类号： C25D1/003 , G01N21/65 , H01G11/26 , H01M4/0469 , H01M4/0471 , H01M4/38 , H01M2004/027
摘要： A method for producing a copper composite structure is disclosed. The method for producing a copper composite structure includes a first step of forming a copper pillar structure; and a second step of annealing the copper pillar structure under a nitrogen atmosphere.
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