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1.发明授权Method of manufacturing semiconductor device by forming a film on a substrate 有权通过在基板上形成膜来制造半导体器件的方法公开(公告)号：US09384972B2
公开(公告)日：2016-07-05
申请号：US14681318
申请日：2015-04-08
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02 , C23C16/455 , H01L21/314 , H01L21/318 , C23C16/46 , C23C16/52 , C23C16/50 , C23C14/54 , C23C28/00
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer by supplying a gas containing a second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
摘要翻译： 提供了通过执行预定次数的循环在基板上形成膜的技术。 该循环包括：通过向衬底供应含有第一元素的气体来形成第一层，其中第一层是不连续层，连续层或其中至少一个不连续层或连续层是 重叠 通过将含有第二元素的气体供给到所述基板来形成第二层，以在所述第一层由含有所述第二元素的气体的改性反应不饱和的条件下改性所述第一层; 以及通过向所述基板供给含有第三元素的气体来形成第三层，以在所述第二层由含有所述第三元素的气体的改性反应不饱和的条件下修饰所述第二层。
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2.发明授权Method of manufacturing semiconductor device by forming a film on a substrate 有权通过在基板上形成膜来制造半导体器件的方法公开(公告)号：US09384971B2
公开(公告)日：2016-07-05
申请号：US14679156
申请日：2015-04-06
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02 , C23C16/455 , H01L21/314 , H01L21/318 , C23C16/46 , C23C16/52 , C23C16/50 , C23C14/54 , C23C28/00
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique including forming a film by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element under a condition where chemical adsorption of a molecule constituting the gas containing the first element is not saturated; forming a second layer including the first layer and a layer including a second element stacked on the first layer by supplying a gas containing the second element under a condition where chemical adsorption of a molecule constituting the gas containing the second element is not saturated; and forming a third layer by supplying a gas containing a third element to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
摘要翻译： 提供了一种技术，包括通过执行预定次数的循环来形成膜。 该循环包括：在构成含有第一元素的气体的分子的化学吸附不饱和的条件下，通过供给含有第一元素的气体来形成第一层; 通过在构成含有第二元素的气体的分子的化学吸附不饱和的条件下，通过供给含有第二元素的气体，形成包括第一层的第二层和包括堆叠在第一层上的第二元素的层; 以及在第二层由含有第三元素的气体的改性反应不饱和的条件下，通过供给含有第三元素的气体来修饰第二层而形成第三层。
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3.发明授权Method of manufacturing semiconductor device and substrate processing apparatus 有权制造半导体器件和衬底处理设备的方法公开(公告)号：US09330904B2
公开(公告)日：2016-05-03
申请号：US14837247
申请日：2015-08-27
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02 , C23C16/455 , H01L21/314 , H01L21/318 , C23C16/46 , C23C16/52 , C23C16/50 , C23C14/54 , C23C28/00
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided are a method of manufacturing a semiconductor device and a substrate processing apparatus. The method includes: forming a first layer including a first element on a substrate by supplying a gas containing the first element; forming a second layer including first and second elements by supplying a gas containing the second element to modify the first layer; and forming a thin film having a predetermined thickness by setting the forming of the first layer and the forming of the second layer to one cycle and repeating the cycle at least once. Pressure, or pressure and a gas supply time in one process of the forming of the first layer and the forming of the second layer are controlled to be higher or longer, or lower or shorter than pressure, or pressure and a time in the one process when the thin film having a stoichiometric composition is formed.
摘要翻译： 提供一种半导体器件和衬底处理设备的制造方法。 该方法包括：通过供给含有第一元件的气体，在基板上形成包括第一元件的第一层; 通过提供含有第二元素的气体来形成包括第一和第二元素的第二层，以修饰第一层; 以及通过将第一层的形成和第二层的形成设定为一个循环并重复该循环至少一次来形成具有预定厚度的薄膜。 在形成第一层和形成第二层的一个过程中的压力或压力和气体供应时间被控制为更高或更长，或者低于或低于压力或压力和一个过程中的时间 当形成具有化学计量组成的薄膜时。
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4.发明授权Method of manufacturing semiconductor device for forming film including at least two different elements 有权制造包含至少两种不同元素的膜的半导体器件的制造方法公开(公告)号：US09478417B2
公开(公告)日：2016-10-25
申请号：US15082145
申请日：2016-03-28
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02 , C23C16/455 , H01L21/314 , H01L21/318 , C23C16/46 , C23C16/52 , C23C16/50 , C23C14/54 , C23C28/00 , C23C16/02 , H01L21/67
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
摘要翻译： 提供了通过执行预定次数的循环在基板上形成膜的技术。 该循环包括：通过向衬底供应含有第一元素的气体来形成第一层，其中第一层是不连续层，连续层或其中至少一个不连续层或连续层是 重叠 形成包括所述第一层的第二层和包括堆叠在所述第一层上的第二元素的不连续层; 以及通过向所述基板供给含有第三元素的气体来形成第三层，以在所述第二层由含有所述第三元素的气体的改性反应不饱和的条件下修饰所述第二层。
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公开(公告)号：US09443719B2
公开(公告)日：2016-09-13
申请号：US15082156
申请日：2016-03-28
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
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6.发明授权Method of manufacturing semiconductor device by forming a film on a substrate 有权通过在基板上形成膜来制造半导体器件的方法公开(公告)号：US09384969B2
公开(公告)日：2016-07-05
申请号：US14679105
申请日：2015-04-06
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02 , C23C16/455 , H01L21/314 , H01L21/318 , C23C16/46 , C23C16/52 , C23C16/50 , C23C14/54 , C23C28/00
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including the first element by supplying a gas containing the first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.
摘要翻译： 提供了一种技术，包括在基板上形成膜，该膜包括第一元件和与第一元件不同的第二元件，通过执行预定次数的周期。 该循环包括：通过将含有第一元素的气体供应到基底来形成包括第一元素的第一层，其中第一层是不连续层，连续层或层，其中至少一个不连续层或 连续层重叠; 以及通过将含有所述第二元素的气体供给到所述基板而形成包含所述第一元素和所述第二元素的第二层，以在所述第一层由含有所述第二元素的气体的改性反应不饱和的条件下改性所述第一层 。
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7.发明授权公开(公告)号：US10199219B2
公开(公告)日：2019-02-05
申请号：US15620280
申请日：2017-06-12
发明人： Satoshi Shimamoto , Yoshiro Hirose , Hajime Karasawa , Ryota Horiike , Naoharu Nakaiso , Yoshitomo Hashimoto
IPC分类号： H01L21/02 , C23C16/455 , C23C16/52 , C23C16/02 , C23C16/28
摘要： There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.
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8.发明授权Substrate processing apparatus capable of forming films including at least two different elements 有权能够形成包含至少两个不同元素的薄膜的基板处理装置公开(公告)号：US09487861B2
公开(公告)日：2016-11-08
申请号：US15182722
申请日：2016-06-15
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： C23C16/455 , C23C16/46 , C23C16/52 , H01L21/02
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
摘要翻译： 提供了通过执行预定次数的循环在基板上形成膜的技术。 该循环包括：通过向衬底供应含有第一元素的气体来形成第一层，其中第一层是不连续层，连续层或其中至少一个不连续层或连续层是 重叠 形成包括所述第一层的第二层和包括堆叠在所述第一层上的第二元素的不连续层; 以及通过向所述基板供给含有第三元素的气体来形成第三层，以在所述第二层由含有所述第三元素的气体的改性反应不饱和的条件下修饰所述第二层。
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公开(公告)号：US09443720B2
公开(公告)日：2016-09-13
申请号：US15082167
申请日：2016-03-28
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.
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10.发明授权Method of manufacturing a semiconductor device by forming a film on a substrate 有权通过在基板上形成膜来制造半导体器件的方法公开(公告)号：US09384968B2
公开(公告)日：2016-07-05
申请号：US14679090
申请日：2015-04-06
发明人： Yushin Takasawa , Hajime Karasawa , Yoshiro Hirose
IPC分类号： H01L21/02 , C23C16/455 , H01L21/314 , H01L21/318 , C23C16/46 , C23C16/52 , C23C16/50 , C23C14/54 , C23C28/00
CPC分类号： H01L21/02271 , C23C14/542 , C23C16/0209 , C23C16/345 , C23C16/45527 , C23C16/45531 , C23C16/45536 , C23C16/45542 , C23C16/45544 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/50 , C23C16/52 , C23C28/36 , H01L21/02112 , H01L21/02123 , H01L21/02126 , H01L21/0214 , H01L21/02145 , H01L21/02153 , H01L21/02161 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/02326 , H01L21/02332 , H01L21/3141 , H01L21/318 , H01L21/3185 , H01L21/67109
摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer including the second layer and a discontinuous layer including a third element stacked on the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.
摘要翻译： 提供了通过执行预定次数的循环在基板上形成膜的技术。 该循环包括：通过向衬底供应含有第一元素的气体来形成第一层，其中第一层是不连续层，连续层或其中至少一个不连续层或连续层是 重叠 形成包括所述第一层的第二层和包括堆叠在所述第一层上的第二元素的不连续层; 形成包括所述第二层的第三层和包括堆叠在所述第二层上的第三元件的不连续层; 以及通过将含有所述第四元素的气体供给到所述衬底来形成包括所述第一元件，所述第二元件，所述第三元件和第四元件的第四层，以修饰所述第三层。
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