公开(公告)号：US20170268104A1

公开(公告)日：2017-09-21

申请号：US15617102

申请日：2017-06-08

申请人： Tokyo Electron Limited

发明人： Hitoshi KATO ,  Jun SATO ,  Masahiro MURATA ,  Kentaro OSHIMO ,  Tomoko SUGANO ,  Shigehiro MIURA

IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  H01L21/02 ,  C23C16/507

CPC分类号： C23C16/4584 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/507 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

摘要： A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

公开(公告)号：US20160260587A1

公开(公告)日：2016-09-08

申请号：US15051801

申请日：2016-02-24

申请人： Tokyo Electron Limited

发明人： Shigehiro MIURA

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32899 ,  H01J2237/20214 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/0228 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/68764

摘要： A substrate processing apparatus includes a rotary table arranged in a vacuum chamber, a first reaction gas supply unit that supplies a first reaction gas to a surface of the rotary table, a second reaction gas supply unit that is arranged apart from the first reaction gas supply unit that supplies a second reaction gas, which reacts with the first reaction gas, to the rotary table surface, an activated gas supply unit that is arranged apart from the first and second reaction gas supply units and includes a discharge unit that supplies an activated etching gas to the rotary table surface, and a plurality of purge gas supply units that are provided near the discharge unit for supplying a purge gas to the rotary table surface. A flow rate of the purge gas supplied from each of the purge gas supply units can be independently controlled.

摘要翻译： 基板处理装置包括设置在真空室中的旋转台，将第一反应气体供给到旋转台的表面的第一反应气体供给单元，与第一反应气体供给部隔开设置的第二反应气体供给单元 单元，其将与第一反应气体反应的第二反应气体提供给旋转台面;活化气体供给单元，其布置成与第一和第二反应气体供应单元分离，并且包括排出单元，其提供活化蚀刻 多个吹扫气体供给单元，其设置在排出单元附近，用于向旋转台面供给净化气体。 可以独立地控制从每个吹扫气体供应单元供应的吹扫气体的流量。

公开(公告)号：US20160138159A1

公开(公告)日：2016-05-19

申请号：US14936759

申请日：2015-11-10

申请人： TOKYO ELECTRON LIMITED

发明人： Hitoshi KATO ,  Shigehiro MIURA ,  Hiroyuki KIKUCHI ,  Katsuyoshi AIKAWA

IPC分类号： C23C16/455 ,  C23C16/458 ,  H01L21/677

CPC分类号： C23C16/4584 ,  C23C16/4408 ,  C23C16/45551 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68792

摘要： A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.

摘要翻译： 通过在基板上提供处理气体来形成膜的成膜装置包括具有装载区域的旋转台，其被构造成使装载在装载区域上的基板旋转; 处理气体供给机构，被配置为将处理气体供给到气体供给区域，以在基板上通过基板的旋转多次重复地穿过气体供给区域进行成膜; 第一齿轮，设置在所述旋转台的另一个表面侧，并且沿所述旋转台的旋转方向旋转; 配置有与所述第一齿轮接合的行星齿轮的第二齿轮，所述行星齿轮被设置成与所述加载区域一起旋转，并且被配置为使所述加载区域旋转以允许所述基板旋转。

公开(公告)号：US20160071722A1

公开(公告)日：2016-03-10

申请号：US14840250

申请日：2015-08-31

申请人： Tokyo Electron Limited

发明人： Shigehiro MIURA ,  Jun SATO

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/0234 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  H01J37/32366 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32752 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/68764 ,  H01L21/68771

摘要： A plasma processing apparatus includes a processing chamber. A turntable to receive a substrate thereon is provided in the processing chamber. A first plasma processing area is provided in a predetermined location in a circumferential direction of the turntable and configured to perform a first plasma process by generating first plasma from a first plasma gas. A second plasma processing area is provided apart from the first plasma processing area in the circumferential direction of the turntable and configured to perform a second plasma process by generating second plasma from a second plasma gas. A separation area is provided in each of two locations between the first plasma processing area and the second plasma processing area and configured to prevent the first plasma gas and the second plasma gas from mixing with each other by separating the first plasma processing area from the second plasma processing area.

摘要翻译： 等离子体处理装置包括处理室。 在处理室中设置有用于接收基板的转台。 第一等离子体处理区域设置在转盘的圆周方向上的预定位置，并且被配置为通过从第一等离子体气体产生第一等离子体来执行第一等离子体处理。 在第一等离子体处理区域的第二等离子体处理区域之间设置有第二等离子体处理区域，该第二等离子体处理区域在转台的圆周方向上，并且被配置为通 在第一等离子体处理区域和第二等离子体处理区域之间的两个位置的每一个中设置分离区域，并且被配置为通过将第一等离子体处理区域与第二等离子体处理区域分离来防止第一等离子体气体和第二等离子体气体彼此混合 等离子处理区。

公开(公告)号：US20150118415A1

公开(公告)日：2015-04-30

申请号：US14514537

申请日：2014-10-15

申请人： Tokyo Electron Limited

发明人： Hitoshi KATO ,  Shigehiro MIURA

IPC分类号： C23C16/50 ,  C23C16/455 ,  C23C16/448 ,  C23C16/458

CPC分类号： C23C16/50 ,  C23C16/45563 ,  C23C16/4584 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01L21/68764 ,  H01L21/68771 ,  H05H1/46 ,  H05H2001/4667

摘要： A plasma processing apparatus for processing a substrate includes a turntable for orbitally revolving a substrate mounting area; a nozzle portion facing the substrate mounting area and having gas discharge ports for generating plasma; an antenna including a linear portion extending to cover a substrate passage area on a downstream side relative to the nozzle portion and a separated portion, wound around a vertical axis, and generating induction plasma in a process area to which the gas is supplied; a Faraday shield including a conductive plate provided between the antenna and the process area to cut off an electric field, and slits formed to orthogonally cross the antenna and cause a magnetic field to pass therethrough, wherein the slits are formed on aside lower than the linear portion and a portion of the conductive plate without the slits is positioned on a side lower than a curved portion.

摘要翻译： 一种用于处理衬底的等离子体处理装置，包括用于使衬底安装区域进行轨道旋转的转盘; 面向基板安装区域并具有用于产生等离子体的气体排出口的喷嘴部分; 天线，包括延伸以覆盖相对于喷嘴部分的下游侧的基板通道区域的直线部分和绕垂直轴线缠绕的分离部分，并且在供应气体的处理区域中产生感应等离子体; 包括设置在天线和处理区域之间以切断电场的导电板的法拉第屏蔽，以及形成为正交地穿过天线并导致磁场通过的狭缝，其中狭缝形成在低于线性 导电板的没有狭缝的部分和一部分位于比弯曲部分低的一侧。

公开(公告)号：US20170335453A1

公开(公告)日：2017-11-23

申请号：US15591300

申请日：2017-05-10

申请人： Tokyo Electron Limited

发明人： Shigehiro MIURA

IPC分类号： C23C16/458 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/24

CPC分类号： C23C16/4584 ,  C23C16/24 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/45548 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/56

摘要： A film deposition apparatus includes a process chamber, a rotary table, a first reaction gas supply part disposed in a first process region and configured to supply a first reaction gas, a second reaction gas supply part disposed in a second process region apart from the first reaction gas supply part in a circumferential direction of the rotary table and configured to supply a second reaction gas, and separation gas supply parts disposed in a separation region between the first reaction gas supply part and the second reaction gas supply part and configured to supply a separation gas for separating the first reaction gas and the second reaction gas. The separation gas supply parts are configured to supply, in addition to the separation gas, an additive gas for controlling adsorption of the first reaction gas or for etching a part of material components included in the first reaction gas.

公开(公告)号：US20170167019A1

公开(公告)日：2017-06-15

申请号：US15364418

申请日：2016-11-30

申请人： Tokyo Electron Limited

发明人： Kazuhide HASEBE ,  Shigehiro MIURA

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/52 ,  C23C16/458 ,  H01L21/02 ,  C23C16/505

CPC分类号： C23C16/45544 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/505 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32752 ,  H01J37/32899 ,  H01J2237/20214 ,  H01J2237/332 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： A plasma processing apparatus includes a process chamber, and a susceptor provided in the process chamber and having a substrate receiving area formed in a top surface thereof. A first plasma generator is configured to perform a first plasma process on a first predetermined area in the substrate receiving area. A first radio frequency power source is connected to the first plasma generator and configured to supply first radio frequency power to the first plasma generator. A second plasma generator is configured to perform a second plasma process on a second predetermined area in the substrate receiving area and to be able to change the second predetermined area. A second radio frequency power source is connected to the second plasma generator and configured to supply second radio frequency power to the second plasma generator.

公开(公告)号：US20160293390A1

公开(公告)日：2016-10-06

申请号：US15080822

申请日：2016-03-25

申请人： TOKYO ELECTRON LIMITED

发明人： Shigehiro MIURA ,  Takeshi KOBAYASHI ,  Katsuaki SUGAWARA ,  Naohide ITO

IPC分类号： H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/458 ,  C23C16/52

CPC分类号： H01J37/32972 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32935 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

摘要： There is provided an apparatus of performing a plasma process on substrates mounted on an upper surface of a rotary table. The apparatus includes: a heater for heating the substrates; a process gas supply part for supplying a process gas toward the upper surface of the rotary table; an antenna for generating an inductively coupled plasma by converting the process gas to plasma; a light detection part for detecting respective light intensities of R, G and B component as light color components; a calculation part for obtaining an evaluation value corresponding to a change amount before and after supplying a high-frequency power to the antenna, with respect to at least one of the respective light intensities; and an ignition determination part for comparing the evaluation value with a threshold value and to determine that ignition of plasma is not generated if the evaluation value does not exceed the threshold value.

摘要翻译： 提供了对安装在旋转台的上表面上的基板上进行等离子体处理的装置。 该装置包括：用于加热基板的加热器; 处理气体供给部，其用于向所述转台的上表面供给处理气体; 用于通过将处理气体转换成等离子体来产生电感耦合等离子体的天线; 用于检测作为浅色分量的R，G和B分量的各个光强度的光检测部分; 相对于各个光强度中的至少一个，获得与向天线供给高频电力前后变化量对应的评价值的计算部; 以及点火确定部分，用于将评估值与阈值进行比较，并且如果评估值不超过阈值，则确定不产生等离子体的点燃。

公开(公告)号：US20160258065A1

公开(公告)日：2016-09-08

申请号：US15051836

申请日：2016-02-24

申请人： Tokyo Electron Limited

发明人： Shigehiro MIURA

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01L21/768 ,  H01L21/67

CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76802

摘要： A substrate processing apparatus includes a rotary table arranged in a vacuum chamber, a first reaction gas supply unit that supplies a first reaction gas to a surface of the rotary table, a second reaction gas supply unit that is arranged apart from the first reaction gas supply unit and supplies a second reaction gas, which reacts with the first reaction gas, to the surface of the rotary table, and an activated gas supply unit that is arranged apart from the first and second reaction gas supply units. The activated gas supply unit includes a discharge unit that supplies an activated fluorine-containing gas to the surface of the rotary table, a pipe that is arranged upstream of the discharge unit and supplies the fluorine-containing gas to the discharge unit, and at least one hydrogen-containing gas supply unit arranged at the pipe for supplying a hydrogen-containing gas into the pipe.

摘要翻译： 基板处理装置包括设置在真空室中的旋转台，将第一反应气体供给到旋转台的表面的第一反应气体供给单元，与第一反应气体供给部隔开设置的第二反应气体供给单元 并且将与第一反应气体反应的第二反应气体供给到旋转台的表面，以及与第一反应气体供给单元和第二反应气体供给单元隔开配置的活性气体供给单元。 活性气体供给单元包括：向旋转台的表面供给活性含氟气体的排出单元，布置在排出单元的上游并将该含氟气体供给到排出单元的管，至少 一个含氢气体供应单元设置在管道处，用于将含氢气体供应到管道中。

公开(公告)号：US20160244877A1

公开(公告)日：2016-08-25

申请号：US15018987

申请日：2016-02-09

申请人： Tokyo Electron Limited

发明人： Hitoshi KATO ,  Shigehiro MIURA

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46

CPC分类号： C23C16/45544 ,  C23C16/45578 ,  C23C16/46

摘要： A film deposition apparatus includes a process chamber having a substantially cylindrical shape, and a turntable to receive a substrate thereon provided in the process chamber. At least one gas nozzle extends toward a central axis of the turntable from an inner side wall of the process chamber above the turntable along a radial direction of the turntable. At least one side wall heater is provided to cover at least part of the inner side wall of the process chamber and/or at least part of a surrounding area of the central axis of the turntable in a wall-shaped manner.

摘要翻译： 膜沉积设备包括具有基本上圆柱形形状的处理室和用于接收其上设置在处理室中的基板的转盘。 至少一个气体喷嘴沿着转台的径向方向从转台的内侧壁沿着转台的径向从转台的中心轴线延伸。 至少一个侧壁加热器被设置成以壁形的方式覆盖处理室的内侧壁的至少一部分和/或转盘的中心轴的周围区域的至少一部分。