FERROMAGNETIC MATERIAL SPUTTERING TARGET
    2.
    发明申请

    公开(公告)号:US20190106783A1

    公开(公告)日:2019-04-11

    申请号:US16089454

    申请日:2017-03-23

    发明人: Yuki Furuya

    IPC分类号: C23C14/34 C22C19/07

    摘要: Provided is an oxide grain-dispersed ferromagnetic material sputtering target having a fine structure which can effectively reduce abnormal discharge and generation of particles caused by oxide grains. A sintered sputtering target contains, as metal or an alloy, 0 mol % or more and 45 mol % or less of Pt, 55 mol % or more and 95 mol % or less of Co, and 0 mol % or more and 40 mol % or less of Cr; and further contains at least two kinds of oxides. The oxides are present in the metal or alloy, and the standard deviation of the number density of oxides is 2.5 or less.