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    PROFILED SPUTTERING TARGET AND METHOD OF MAKING THE SAME
    4.
    发明申请
    PROFILED SPUTTERING TARGET AND METHOD OF MAKING THE SAME 审中-公开

    公开(公告)号：US20180308671A1

    公开(公告)日：2018-10-25

    申请号：US15947586

    申请日：2018-04-06

    申请人： Honeywell International Inc.

    发明人： Shih-Yao Lin ,  Stephane Ferrasse ,  Jaeyeon Kim ,  Frank C. Alford

    IPC分类号： H01J37/34 ,  C23C14/34

    CPC分类号： H01J37/3423 ,  C23C14/3407 ,  H01J37/3432 ,  H01J37/3435 ,  H01J37/3491

    摘要： A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

    Method and device for continuous cold plasma deposition of metal coatings
    5.
    发明授权
    Method and device for continuous cold plasma deposition of metal coatings 有权
    金属涂层连续冷等离子体沉积的方法和装置

    公开(公告)号：US07156960B2

    公开(公告)日：2007-01-02

    申请号：US10362585

    申请日：2001-08-23

    申请人： Pierre Vanden Brande ,  Alain Weymeersch

    发明人： Pierre Vanden Brande ,  Alain Weymeersch

    IPC分类号： C23C14/35 ,  C23C16/00

    CPC分类号： H01J37/3432 ,  C23C14/246 ,  C23C14/32 ,  C23C14/3414 ,  H01J37/3408

    摘要： A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

    摘要翻译： 用于在基底（1）上沉积金属层的方法使用加热的外壳（7）内的冷等离子体，以避免在其表面形成金属沉积物。 外壳具有用于衬底的入口（21）和出口（22），其具有由它们之间的金属蒸气源组成的电极，以与衬底或单独的导电元件形成等离子体（6）作为计数器 -电极。 沉积金属以液态引入保留罐（8）中，并且在衬底上形成金属层期间以基本恒定的水平保持为液体。 包括用于将这种涂布基材的方法投入使用的设备的独立权利要求。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    6.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
    等离子体加工设备和等离子体处理方法

    公开(公告)号：US20160032445A1

    公开(公告)日：2016-02-04

    申请号：US14799650

    申请日：2015-07-15

    申请人： Tokyo Electron Limited

    发明人： Yoshihide KIHARA ,  Masanobu HONDA ,  Toru HISAMATSU

    IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/06

    CPC分类号： C23C14/34 ,  C23C14/0021 ,  C23C14/0036 ,  C23C14/06 ,  C23C14/0605 ,  C23C14/0694 ,  C23C14/3414 ,  C23C14/3435 ,  C23C14/345 ,  C23C16/30 ,  C23C16/44 ,  C23C16/448 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3432 ,  H01J37/3438 ,  H01J37/3491

    摘要： A plasma processing apparatus includes a first electrode, a second electrode disposed to face the first electrode, a chamber, a first high-frequency power supply, a direct-current power supply, and a gas supply source. The plasma processing apparatus generates first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber; and generates second plasma to sputter the film of the reaction product by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber.

    摘要翻译： 等离子体处理装置包括第一电极，与第一电极相对设置的第二电极，室，第一高频电源，直流电源和气体供给源。 等离子体处理装置通过使第一高频电源向第二电极提供第一高频电力并且使气体供给源提供第一气体而产生第一等离子体以在第二电极上形成反应产物的膜 进入房间 并通过使第一高频电源向第二电极提供第一高频电力而产生第二等离子体以溅射反应产物的膜，从而使直流电源向第二高频电源提供直流电力 电极，并且使气体供应源将第二气体供应到室中。

    SPUTTERING TARGET
    7.
    发明申请
    SPUTTERING TARGET 审中-公开
    飞溅目标

    公开(公告)号：US20100126854A1

    公开(公告)日：2010-05-27

    申请号：US12277197

    申请日：2008-11-24

    申请人： Daniel O. Clark

    发明人： Daniel O. Clark

    IPC分类号： C23C14/34 ,  C23C14/00

    CPC分类号： C23C14/3407 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3432 ,  H01J37/3435

    摘要： Embodiments of the present invention generally include a sputtering target capable of substantially reducing the amount of wasted material associated with conventional sputtering targets. In one embodiment, the sputtering target includes a fluidized bed of sputtering material that constantly maintains a planar sputtering surface throughout the sputtering process. In one embodiment, the fluidized bed of sputtering material is either periodically or constantly supplied with sputtering material to both maintain a planar sputtering surface and reduce downtime of the sputtering equipment.

    摘要翻译： 本发明的实施方案通常包括能够显着减少与常规溅射靶相关的浪费材料量的溅射靶。 在一个实施例中，溅射靶包括溅射材料的流化床，其在整个溅射过程中始终保持平面溅射表面。 在一个实施例中，溅射材料的流化床周期性地或恒定地提供溅射材料，以保持平面溅射表面并减少溅射设备的停机时间。

    CYLINDRICAL EVAPORATION SOURCE
    8.
    发明申请
    CYLINDRICAL EVAPORATION SOURCE 审中-公开
    圆柱蒸发源

    公开(公告)号：US20140238852A1

    公开(公告)日：2014-08-28

    申请号：US14188134

    申请日：2014-02-24

    申请人： SULZER METAPLAS GMBH

    发明人： Joerg VETTER ,  Stefan ESSER ,  Jurgen MUELLER ,  Georg ERKENS

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32669 ,  C23C14/325 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/32055 ,  H01J37/32614 ,  H01J37/3402 ,  H01J37/3432 ,  H01J37/345

    摘要： Cylindrical evaporation source which includes, at an outer cylinder wall, target material to be evaporated as well as a first magnetic field source and a second magnetic field source which form at least a part of a magnet system and are arranged in an interior of the cylindrical evaporation source for generating a magnetic field. In this respect, first magnetic field source and second magnetic field source are provided at a carrier system such that a shape and/or a strength of the magnetic field can be set in a predefinable spatial region in accordance with a predefinable scheme. In embodiments, the carrier system is configured for setting the shape and/or strength of the magnetic field of the carrier system such that the first magnetic field source is arranged at a first carrier arm and is pivotable by a predefinable pivot angle (α1) with respect to a first pivot axis.

    摘要翻译： 圆柱形蒸发源，其在外筒壁处包括待蒸发的靶材料以及形成至少一部分磁体系统的第一磁场源和第二磁场源，并且布置在圆筒形的内部 用于产生磁场的蒸发源。 在这方面，第一磁场源和第二磁场源设置在载体系统处，使得磁场的形状和/或强度可以根据预定义方案设置在可预定的空间区域中。 在实施例中，载体系统被配置用于设置载体系统的磁场的形状和/或强度，使得第一磁场源布置在第一载体臂处，并且可由可预定的枢转角度（α1）与 相对于第一枢轴。

    Method and device for continuous cold plasma deposition of metal coatings
    9.
    发明申请
    Method and device for continuous cold plasma deposition of metal coatings 有权
    金属涂层连续冷等离子体沉积的方法和装置

    公开(公告)号：US20040026234A1

    公开(公告)日：2004-02-12

    申请号：US10362585

    申请日：2003-08-18

    发明人： Pierre Vanden Brande ,  Alain Weymeersch

    IPC分类号： C23C014/32

    CPC分类号： H01J37/3432 ,  C23C14/246 ,  C23C14/32 ,  C23C14/3414 ,  H01J37/3408

    摘要： A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

    摘要翻译： 用于在基底（1）上沉积金属层的方法使用加热的外壳（7）内的冷等离子体，以避免在其表面形成金属沉积物。 外壳具有用于衬底的入口（21）和出口（22），其具有由它们之间的金属蒸气源组成的电极，以与衬底或单独的导电元件形成等离子体（6）作为计数器 -电极。 沉积金属以液态引入保留罐（8）中，并且在衬底上形成金属层期间以基本恒定的水平保持为液体。 包括用于将这种涂布基材的方法投入使用的设备的独立权利要求。

    Magnetron sputtering method and apparatus for compound thin films
    10.
    发明授权
    Magnetron sputtering method and apparatus for compound thin films 失效
    复合薄膜的磁控溅射法和装置

    公开(公告)号：US5405517A

    公开(公告)日：1995-04-11

    申请号：US162592

    申请日：1993-12-06

    申请人： Curtis M. Lampkin

    发明人： Curtis M. Lampkin

    IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/34

    CPC分类号： H01J37/3429 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3402 ,  H01J37/3432

    摘要： An apparatus is described for depositing a thin film (9) of compound materials on selected substrates (48) in an evacuable coating chamber. This apparatus includes a rotating primary surrogate magnetron cathode surface (19) which acts to receive, in-situ, material to be sputtered. Vapor crucibles (2) expose the rotating cathode surface (19) to material vapors (8) which condense on the thermally cooled cathode surface (19) to combine with other coatings on the cathode and are thence rotated through the associated plasma sputter zone (26P) to sputter deposit desired film (9). Auxiliary rotating magnetron cathodes (32) can deposit additional material onto rotating primary cathode (19). Molten material crucible assemblies (31) having coating rollers (34) can convey molten material onto rotating auxiliary thermally cooled cathode surfaces (32) which sputter coat primary cathode. When a selected combination of vapor crucibles (2) and auxiliary rotating cathodes (32) cooperate to coat rotating primary cathode surface (19) it is possible to deposit alloys or a large class of compound thin film materials in-situ without having to prefabricate cathodes of compound materials.Sputter deposited film (9) uniformity is improved by use of three methods: cyclically varying power applied to the primary surrogate cathode, narrow sputter zones, and premixing of condensing vapors.

    摘要翻译： 描述了一种用于在可抽出的涂覆室中将选择的基底（48）上的复合材料薄膜（9）沉积的装置。 该装置包括旋转的主代理磁控管阴极表面（19），其用于原位接收待溅射的材料。 蒸气坩埚（2）将旋转的阴极表面（19）暴露于冷凝在热冷阴极表面（19）上的物质蒸气（8），以与阴极上的其它涂层结合，然后旋转通过相关联的等离子体溅射区（26P ）以溅射沉积所需的膜（9）。 辅助旋转磁控阴极（32）可以将额外的材料沉积到旋转的一次阴极（19）上。 具有涂布辊（34）的熔融材料坩埚组件（31）可以将熔融材料输送到旋转的辅助热冷阴极表面（32）上，溅射涂覆初级阴极。 当选择的蒸汽坩埚（2）和辅助旋转阴极（32）的组合配合以涂覆旋转的主阴极表面（19）时，可以原位沉积合金或大量的复合薄膜材料，而无需预制阴极 的复合材料。 通过使用三种方法改善溅射沉积膜（9）的均匀性：施加到主要替代阴极的循环变化的功率，窄的溅射区域和冷凝蒸气的预混合。