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1.发明申请公开(公告)号：US20100272921A1
公开(公告)日：2010-10-28
申请号：US12809724
申请日：2008-12-22
申请人： Pierre Vanden Brande
发明人： Pierre Vanden Brande
CPC分类号： C23C14/325 , C23C14/16 , C23C14/24 , C23C14/243 , C23C14/246 , C23C14/32 , C23C14/542 , C23C14/562
摘要： The invention relates to a method and a device for the coating of running substrates (25) moving along a run direction through a treatment zone (6), in which the vapour of a coating material is generated in a chamber (5), this vapour passing through a treatment aperture towards the treatment zone (6) where the coating material condenses on the surface of the substrates (25). The vapour flow through the treatment aperture is controlled by adjusting the extent to which the treatment aperture is shut off by at least one shutter (13), between an open position, in which said vapour flows through the treatment aperture towards the treatment zone (6), and a closed position, in which the vapour is prevented from flowing towards the treatment zone (6) through the treatment aperture.
摘要翻译： 本发明涉及一种用于涂覆运行基板（25）的方法和装置，该运行基板（25）沿运行方向移动通过处理区（6），其中在室（5）中产生涂料的蒸汽，该蒸气 通过治疗孔朝向处理区（6），其中涂层材料在基底（25）的表面上凝结。 通过处理孔的蒸汽流量通过调节在至少一个活门（13）之间的处理孔被切断的程度来控制，在打开位置之间，所述蒸气通过处理孔流向处理区（6） ）和闭合位置，其中防止蒸汽通过处理孔流向处理区（6）。
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公开(公告)号：US06638032B1
公开(公告)日：2003-10-28
申请号：US09856860
申请日：2001-10-29
IPC分类号： F04B1700
CPC分类号： F04F7/00
摘要： Vacuum pump with a chamber (1) having, on one side, an intake (2) for pumping gas and, on the opposite side, an outlet (3) for the gas, displacement elements (4) being provided to drive the gas from the intake (2) towards the outlet (3), the displacement elements (4) including at least a vibrating element (4) for generating sound waves moving in the chamber (1), elements for closing (6) the outlet (3) being provided synchronously co-operating with the displacement elements (4) so as to clear the outlet opening (3) when the gas pressure in the proximity of the outlet (3) is higher than that in the proximity of the intake (2).
摘要翻译： 具有室（1）的真空泵，其一侧具有用于泵送气体的进气口（2），并且在相对侧具有用于气体排出元件（4）的出口（3），以将气体从 朝向出口（3）的入口（2），至少包括用于产生在腔室（1）中移动的声波的振动元件（4）的位移元件（4），用于关闭（6）出口（3）的元件， 与所述位移元件（4）同步地配合，以便当所述出口（3）附近的气体压力高于所述进气口（2）附近时的气体压力时，使所述出口开口（3）清除。
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公开(公告)号：US06612816B1
公开(公告)日：2003-09-02
申请号：US09830022
申请日：2001-11-15
IPC分类号： F04B1700
CPC分类号： F04D33/00
摘要： The invention concerns a molecular pump for evacuating a gas from a chamber, comprising a substantially sealed box (1) having on one of its sides an intake orifice (2) to be connected to said chamber and, on the opposite side, an outlet orifice (3), to be preferably connected to a discharge pump, whereby elements (4) are mounted between those two orifices (2) and (3) at some distance from one another in substantially fixed sites inside said box (1) for the gas to pass through, said elements (4) being of such a nature as to impart to said gas molecules, coming from said chamber and coming into contact with said elements (4), a speed whereof the resultant is oriented towards the outlet orifice (3).
摘要翻译： 本发明涉及一种用于从腔室排出气体的分子泵，其包括基本上密封的箱体（1），其中一个侧面上具有要连接到所述室的进气孔口（2），并且在相对侧上具有出口孔口 （3），优选地连接到排出泵，由此元件（4）安装在这两个孔（2）和（3）之间，在所述箱体（1）内的基本上固定的位置处彼此相距一定距离，用于气体 所述元件（4）具有赋予来自所述室的所述气体分子并与所述元件（4）接触的性质，所述元件（4）的速度使得所述元件朝向出口孔（3） ）。
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4.发明授权公开(公告)号：US06485615B1
公开(公告)日：2002-11-26
申请号：US08225942
申请日：1994-04-11
IPC分类号： C23C1434
CPC分类号： C23C14/3414 , C23C14/34 , C23C14/562
摘要： A process of depositing a coating (5) onto a substrate (3) by reactive sputtering in a closed chamber (1) in the presence of a plasma of a non-reactive gas, and a reactive gas containing the element or elements said coating has to be made of, according to which process use is made of a target (2) having a surface layer (4) directed towards the substrate and containing at least one of the elements to be sputter deposited onto this substrate, according to which process the thickness of said surface layer (4) during the cathode sputtering is controlled by adjusting the concentration of the gases in said closed chamber (1). The single figure.
摘要翻译： 在非反应性气体的等离子体存在下，在封闭室（1）中反应溅射将涂层（5）沉积到衬底（3）上的过程以及包含所述元件或所述涂层的反应性气体的方法具有 根据哪个方法制成具有指向基板的表面层（4）的目标（2），并且包含要溅射沉积到该基板上的至少一个元素，根据该方法， 通过调节所述封闭室（1）中的气体浓度来控制阴极溅射期间所述表面层（4）的厚度。 单身人士。
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5.发明授权Process for stripping the surface of a substrate and apparatus for implementing this process 有权用于剥离基材表面的方法和用于实施该方法的装置公开(公告)号：US06231727B1
公开(公告)日：2001-05-15
申请号：US09165300
申请日：1998-10-02
IPC分类号： C23C1434
CPC分类号： H01J37/32779 , C23G5/00 , H01J37/3405 , H01J37/3438 , H01J37/3444
摘要： Process for continuously stripping the surface of a substrate moving in a defined direction through a vacuum chamber past at least one counterelectrode, according to which process a plasma is created in a gas, between this counterelectrode and this surface, so as to generate radicals and/or ions which can act on the surface to be stripped, characterized in that at least one pair of successive counterelectrodes, past which the abovementioned chamber and in that an alternating potential is applied to these counterelectrodes so as to impose on the latter an alternately positive and negative potential with respect to the substrate.
摘要翻译： 用于连续剥离沿着限定方向移动的衬底的表面通过至少一个反电极的真空室的方法，根据该方法，在该反电极和该表面之间产生气体中的等离子体，以产生自由基和/ 或能够作用在要剥离的表面上的离子，其特征在于，至少一对连续的反电极通过上述室，并且交替电位被施加到这些反电极上，以便在其上施加交替的正极和 相对于底物的负电位。
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6.发明授权Process for the formation of a coating on a substrate and device for the use this process 失效用于在基材上形成涂层的方法和用于该方法的装置公开(公告)号：US06171659B2
公开(公告)日：2001-01-09
申请号：US08893578
申请日：1997-07-11
IPC分类号： C23C1424
CPC分类号： C23C14/562 , C23C14/0641 , C23C14/08 , C23C14/58
摘要： Process for the depositing, onto a substrate, of a coating essentially constituted of an electronic conductor compound, in which the said coating is formed by producing alternatively, on the one hand, in at least one depositing zone, one or several deposits of a determined thickness of an electronic conductor element on the substrate, and, on the other hand, in at least one reaction zone, one or several reactions of the element thus deposited with ions of a reactive gas which are implanted into the deposit of the above-mentioned element over approximately this entire thickness determined in a way as to form, preferably with the totality of this element, the said compound, the above-mentioned ions being submitted to a kinetic energy below 2000 V, while the aforesaid thickness of the deposit of the element is determined as a function of the kinetic energy applied in such a way as to allow the implantation of these ions over approximately this entire thickness.
摘要翻译： 一种用于将基本上由电子导体化合物构成的涂层沉积到基底上的方法，其中所述涂层通过一方面在至少一个沉积区中交替制备形成，一个或多个沉积物确定 另一方面，在至少一个反应区中，由此沉积的元素的一个或几个反应与被注入上述沉积物的沉积物中的反应性气体的离子的一个或几个反应 元素大约在整个厚度上确定，以便形成，优选地与该元素的总体相比，所述化合物，上述离子被提供到低于2000伏的动能，而上述厚度的沉积物 确定元素作为施加的动能的函数，以允许这些离子在大致整个厚度上的注入。
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7.发明授权Process and device for forming a coating on a substrate by cathode sputtering 有权用于通过阴极溅射在基板上形成涂层的工艺和装置
公开(公告)号：US6083359A
公开(公告)日：2000-07-04
申请号：US319560
申请日：1999-06-08
CPC分类号： H01J37/32761 , C23C14/3407 , C23C14/562 , H01J37/34
摘要： Disclosed is a process for forming a coating on a substrate (2,2') by cate sputtering, comprising the coating of substrate surfaces (2,2') which have been transferred to a cathode sputtering chamber (1). The substrates vary in width and have a predetermined maximum width. The process involves the use of a target (3) whose surface (4) has an invariable length corresponding approximately to said maximum substrate width. A shift takes place, in accordance with the width of the substrate being coated, between the surface (4) of the target and the substrate surface to be coated, so that the entire surface of the target remains more or less constantly in front of the surface to be coated during the cathode sputtering process.
摘要翻译： PCT No.PCT / BE97 / 00133 Sec。 371 1999年6月8日第 102（e）日期1999年6月8日PCT 1997年12月9日PCT公布。 公开号WO98 / 26108 PCT 日期1998年6月18日公开是通过阴极溅射在衬底（2,2'）上形成涂层的方法，包括已经转移到阴极溅射室（1）的衬底表面（2,2'）的涂层， 。 基板的宽度变化并且具有预定的最大宽度。 该过程包括使用其表面（4）具有大致对应于所述最大衬底宽度的不变长度的靶（3）。 根据待涂覆的基底的宽度，在靶的表面（4）和待涂覆的基底表面之间发生位移，使得靶的整个表面或多或少地保持在 在阴极溅射过程中待涂覆的表面。
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公开(公告)号：US06933460B2
公开(公告)日：2005-08-23
申请号：US10343764
申请日：2001-08-06
IPC分类号： H05H1/24 , B01J3/00 , B01J19/08 , C21D1/38 , C21D1/56 , C21D9/56 , C23C14/02 , C23F4/00 , C23G3/02 , C23G5/00 , H01J37/32 , H01J37/34 , H05H1/46 , B23K9/00
CPC分类号： H01J37/32623 , C21D1/38 , C21D9/561 , C23C14/022 , C23G5/00 , H01J37/3266
摘要： The invention relates to a method of treatment, in particular cleaning and/or heating, for a metal substrate (1) fed in a substantially continuous manner through a vacuum chamber (3), having a treatment zone in which an electric discharge (10), i.e. a plasma, and a magnetic field are produced in a gas maintained at a pressure below atmospheric pressure between at least the substrate (1), acting as an electrode, and at least one counter-electrode (9) to enable the substrate (1) to be bombarded by the ions produced in the electric discharge (10). This method is characterised in that a confining magnetic induction field is produced entirely around the substrate (1) in the treatment zone so that the electric discharge (10) is also confined entirely around the substrate (1) inside this treatment zone by the confinement of electrons released in the electric discharge (10).
摘要翻译： 本发明涉及一种用于以基本上连续的方式通过真空室（3）供给的金属基底（1）的处理，特别是清洁和/或加热的方法，所述真空室具有处理区，其中放电（10） 即等离子体，并且在至少用作电极的基板（1）和至少一个对电极（9）之间的气体中产生保持在低于大气压的压力下的气体，以使基板（ 1）被放电（10）中产生的离子轰击。 该方法的特征在于，在处理区域中完全围绕基板（1）产生约束磁感应场，使得放电（10）也被完全限制在该处理区内的基板（1）周围，通过限制 在放电（10）中释放的电子。
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公开(公告)号：US06337005B2
公开(公告)日：2002-01-08
申请号：US09754401
申请日：2001-01-05
IPC分类号： C23C1434
CPC分类号： C23C14/562 , C23C14/0641 , C23C14/08 , C23C14/58
摘要： Process for the depositing, onto a substrate, of a coating essentially constituted of an electronic conductor compound, in which the said coating is formed by producing alternatively, on the one hand, in at least one depositing zone, one or several deposits of a determined thickness of an electronic conductor element on the substrate, and, on the other hand, in at least one reaction zone, one or several reactions of the element thus deposited with ions of a reactive gas which are implanted into the deposit of the above-mentioned element over approximately this entire thickness determined in a way as to form, preferably with the totality of this element, the said compound, the above-mentioned ions being submitted to a kinetic energy below 2000 V, while the aforesaid thickness of the deposit of the element is determined as a function of the kinetic energy applied in such a way as to allow the implantation of these ions over approximately this entire thickness.
摘要翻译： 一种用于将基本上由电子导体化合物构成的涂层沉积到基底上的方法，其中所述涂层通过一方面在至少一个沉积区中交替制备形成，一个或多个沉积物确定 另一方面，在至少一个反应区中，由此沉积的元素的一个或几个反应与被注入上述沉积物的沉积物中的反应性气体的离子的一个或几个反应 元素大约在整个厚度上确定，以便形成，优选地与该元素的总体相比，所述化合物，上述离子被提供到低于2000伏的动能，而上述厚度的沉积物 确定元素作为施加的动能的函数，以允许这些离子在大致整个厚度上的注入。
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公开(公告)号：US6099667A
公开(公告)日：2000-08-08
申请号：US21113
申请日：1998-02-10
IPC分类号： C21D1/09 , C21D1/26 , C21D1/38 , C21D1/74 , C21D1/773 , C21D9/56 , C23C14/02 , C23C14/56 , C23C16/02 , C23C16/54 , H01J37/32
CPC分类号： C23C14/022 , C21D1/38 , C21D9/561 , C23C14/562 , C23C16/0245 , C23C16/545 , C21D1/773
摘要： A process for annealing a moving metal substrate, especially a steel sheet. The process includes providing a gas under reduced pressure facing a first side of the substrate, creating a cold plasma in the gas by means of plasma discharges between the substrate and a counter electrode, the plasma being uniformly divided over the width of the substrate, and dissipating electrical power from the plasma discharges into the substrate, resulting in a uniform distribution of the density of power over the width of the substrate and a quick and uniform heating thereof
摘要翻译： 一种用于对移动的金属基材，特别是钢板进行退火的方法。 该方法包括提供面向衬底的第一侧的减压下的气体，通过衬底和对电极之间的等离子体放电在气体中产生冷等离子体，等离子体在衬底的宽度上均匀分布，以及 将等离子体放电的电力耗散到基板中，导致功率密度在基板的宽度上的均匀分布，并且其快速均匀的加热
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