公开(公告)号：US11870411B2

公开(公告)日：2024-01-09

申请号：US17041367

申请日：2019-03-26

Applicant: Soitec

Inventor： Djamel Belhachemi ,  Thierry Barge

IPC: H10N30/08 ,  H03H3/10 ,  C09J7/30 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H10N30/073 ,  H10N30/082 ,  H10N30/086

CPC classification number: H03H3/10 ,  C09J7/30 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02897 ,  H03H9/25 ,  H03H9/6489 ,  H10N30/073 ,  H10N30/08 ,  H10N30/082 ,  H10N30/086

Abstract: A process for fabricating a substrate for a radiofrequency device by joining a piezoelectric layer to a carrier substrate by way of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, the process being characterized in that it comprises the following steps: —providing a piezoelectric substrate having a rough surface for reflecting a radiofrequency wave, —depositing a dielectric layer on the rough surface of the piezoelectric substrate, —providing a carrier substrate, —depositing a photo-polymerizable adhesive layer on the carrier substrate, —bonding the piezoelectric substrate to the carrier substrate by way of the dielectric layer and of the adhesive layer, in order to form an assembled substrate, —irradiating the assembled substrate with a light flux in order to polymerize the adhesive layer, the adhesive layer and the dielectric layer together forming the electrically insulating layer.

公开(公告)号：US11750171B2

公开(公告)日：2023-09-05

申请号：US16754811

申请日：2018-09-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Keiichirou Geshi ,  Masato Hasegawa ,  Shigeru Nakayama

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/25 ,  H10N30/06 ,  H10N30/072 ,  H10N30/086

CPC classification number: H03H9/02574 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02897 ,  H03H9/25 ,  H10N30/06 ,  H10N30/072 ,  H10N30/086

Abstract: A ceramic substrate is formed of polycrystalline ceramic and has a supporting main surface. At the supporting main surface of the ceramic substrate, the mean of grain sizes of the polycrystalline ceramic is 0.5 μm or more and less than 15 μm and the standard deviation of the grain sizes is less than 1.5 times the mean.

公开(公告)号：US20230163743A1

公开(公告)日：2023-05-25

申请号：US18157881

申请日：2023-01-23

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Mary Winters ,  Craig Moe

IPC: H03H3/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H03H9/02 ,  H03H9/54 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/87 ,  H10N30/00

CPC classification number: H03H3/02 ,  H03H9/13 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/0523 ,  H03H9/547 ,  H03H9/02015 ,  H03H9/02118 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/85 ,  H10N30/086 ,  H10N30/88 ,  H10N30/875 ,  H10N30/877 ,  H10N30/10513 ,  H03H2003/021 ,  H03H2003/025 ,  H10N30/072 ,  Y10T29/42

Abstract: An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

公开(公告)号：US20240146275A1

公开(公告)日：2024-05-02

申请号：US18404685

申请日：2024-01-04

Applicant: Soitec

Inventor： Djamel Belhachemi ,  Thierry Barge

IPC: H03H3/10 ,  C09J7/30 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H10N30/073 ,  H10N30/08 ,  H10N30/082 ,  H10N30/086

CPC classification number: H03H3/10 ,  C09J7/30 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/02897 ,  H03H9/25 ,  H03H9/6489 ,  H10N30/073 ,  H10N30/08 ,  H10N30/082 ,  H10N30/086

Abstract: A process for fabricating a substrate for a radiofrequency device includes providing a piezoelectric substrate and a carrier substrate, depositing a dielectric layer on a surface of the piezoelectric substrate, assembling together the piezoelectric substrate and the carrier substrate with a polymerizable adhesive directly between the dielectric layer and the carrier substrate to form an assembled substrate, and polymerizing the polymerizable adhesive layer to form a polymerized layer bonding the piezoelectric substrate to the carrier substrate, the polymerized layer and the dielectric layer together forming an electrically insulating layer between the piezoelectric substrate and the carrier substrate,

公开(公告)号：US20240074316A1

公开(公告)日：2024-02-29

申请号：US18502682

申请日：2023-11-06

Applicant: NGK INSULATORS, LTD.

Inventor： Yuji HORI ,  Takahiro YAMADERA ,  Tatsuro TAKAGAKI

IPC: H10N30/072 ,  H10N30/086 ,  H10N30/853

CPC classification number: H10N30/072 ,  H10N30/086 ,  H10N30/8542

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×1015 Ω/□ or higher.

公开(公告)号：US11871671B2

公开(公告)日：2024-01-09

申请号：US16934460

申请日：2020-07-21

Applicant: NGK INSULATORS, LTD.

Inventor： Yuji Hori ,  Takahiro Yamadera ,  Tatsuro Takagaki

IPC: H10N30/072 ,  H10N30/086 ,  H10N30/853

CPC classification number: H10N30/072 ,  H10N30/086 ,  H10N30/8542

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×101 5Ω/□ or higher.

公开(公告)号：US11646710B2

公开(公告)日：2023-05-09

申请号：US17865092

申请日：2022-07-14

Applicant: Akoustis, Inc.

Inventor： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC: H03H3/02 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/02 ,  H03H9/05

CPC classification number: H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

Abstract: A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

公开(公告)号：US12101080B2

公开(公告)日：2024-09-24

申请号：US18302440

申请日：2023-04-18

Applicant: Soitec

Inventor： Arnaud Castex ,  Daniel Delprat ,  Bernard Aspar ,  Ionut Radu

IPC: H03H9/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/64 ,  H10N30/00 ,  H10N30/072 ,  H10N30/073 ,  H10N30/082 ,  H10N30/086 ,  H10N30/853 ,  H10N35/01

CPC classification number: H03H9/02834 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02574 ,  H10N30/072 ,  H10N30/073 ,  H10N30/704 ,  H10N30/8542 ,  H03H9/6496 ,  H10N30/082 ,  H10N30/086 ,  H10N35/01 ,  Y10T29/42

Abstract: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

公开(公告)号：US20240238843A1

公开(公告)日：2024-07-18

申请号：US18155004

申请日：2023-01-16

Applicant: GE Precision Healthcare LLC

Inventor： Alexis Hubert ,  Giandonato Stallone ,  Edouard Da Cruz ,  Manon Chateauvieux ,  Solenne Drewniak

IPC: B06B1/06 ,  H10N30/086 ,  H10N30/088

CPC classification number: B06B1/0622 ,  H10N30/086 ,  H10N30/088 ,  A61B8/4488 ,  B06B2201/76

Abstract: Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array includes a plurality of elements formed of two or more piezoelectric materials, the two or more piezoelectric materials having different resonance frequencies. Furthermore, the two or more piezoelectric materials may be oriented independent of a dicing pattern of the transducer array, the dicing pattern defining the plurality of elements.

公开(公告)号：US20240088860A1

公开(公告)日：2024-03-14

申请号：US18510119

申请日：2023-11-15

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey M. Leathersich

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H10N30/00 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/85 ,  H10N30/87 ,  H10N30/88

CPC classification number: H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  H10N30/072 ,  Y10T29/42

Abstract: A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.