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公开(公告)号:US12087615B2
公开(公告)日:2024-09-10
申请号:US17805614
申请日:2022-06-06
申请人: Soitec
发明人: Bruno Ghyselen , Jean-Marc Bethoux
IPC分类号: H01L21/762 , H10N30/073
CPC分类号: H01L21/76254 , H10N30/073
摘要: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the support.
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公开(公告)号:US11751847B2
公开(公告)日:2023-09-12
申请号:US16703406
申请日:2019-12-04
IPC分类号: A61B8/00 , H10N30/073 , H10N30/088 , H10N30/00 , B06B1/06
CPC分类号: A61B8/4483 , B06B1/0644 , H10N30/073 , H10N30/088 , H10N30/10516
摘要: Methods and systems are provided for a single element ultrasound transducer. In one embodiment, the ultrasound transducer comprises a front face, a back face parallel to the front face, a piezoelectric layer having a top surface electrically coupled to the signal pad and a bottom surface electrically coupled to the ground pad. In this way, the transducer can work robustly and may be automatically mounted to an imaging probe.
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公开(公告)号:US11722112B2
公开(公告)日:2023-08-08
申请号:US16513865
申请日:2019-07-17
发明人: Shinsuke Kawamori , Masao Gamo
IPC分类号: H03H3/02 , H03H9/215 , H10N30/073
CPC分类号: H03H3/02 , H03H9/215 , H10N30/073 , H03H2003/026
摘要: A manufacturing method for an electronic component that includes a providing a base member on a first main surface of a first board, sandwiching the base member and a joining member paste between the first main surface of the first board and a transfer main surface of a transfer board, forming a joining member joined with the base member while the joining member paste is sandwiched by the first board and the transfer board, and peeling off the transfer board from the joining member joined with the base member.
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公开(公告)号:US20240206341A1
公开(公告)日:2024-06-20
申请号:US18595522
申请日:2024-03-05
申请人: FUJIFILM Corporation
发明人: Shun ISHIGE
IPC分类号: H10N30/50 , H04R17/00 , H10N30/045 , H10N30/073 , H10N30/20 , H10N30/87
CPC分类号: H10N30/508 , H10N30/045 , H10N30/073 , H10N30/202 , H10N30/871 , H04R17/005
摘要: An object of the present invention is to provide a laminated piezoelectric element obtained by folding and laminating a piezoelectric film, in which, in a case where a pressure is applied, it is possible to prevent an electrode layer from breaking at a folded-back portion, and to provide an electroacoustic transducer using the laminated piezoelectric element. The object is achieved by including a bonding layer for bonding adjacent layers to each other in the lamination of the piezoelectric film, in which, in a case where a thickness of the bonding layer at a center portion in a folding-back direction of the piezoelectric film is denoted as d1 and a spacing between piezoelectric films at a folded-back portion of the piezoelectric film in a lamination direction is denoted as d2, a relationship of “d2
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公开(公告)号:US20240030883A1
公开(公告)日:2024-01-25
申请号:US17907247
申请日:2021-03-24
申请人: Soitec
IPC分类号: H03H3/08 , H10N30/073 , H10N30/082 , H10N30/086
CPC分类号: H03H3/08 , H10N30/073 , H10N30/082 , H10N30/086
摘要: A method of manufacturing a piezoelectric structure comprises providing a substrate of piezoelectric material, providing a carrier substrate, depositing a dielectric bonding layer at a temperature lower than or equal to 300° C. on a single side of the substrate of piezoelectric material, a step of joining the substrate of piezoelectric material to the carrier substrate via the dielectric bonding layer, a thinning step for forming the piezoelectric structure, which comprises a layer of piezoelectric material joined to a carrier substrate.
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公开(公告)号:US11871674B1
公开(公告)日:2024-01-09
申请号:US16594348
申请日:2019-10-07
IPC分类号: G02B1/111 , G02B1/116 , H10N30/20 , G02B27/01 , G02B1/115 , G02B26/00 , H10N30/02 , H10N30/06 , H10N30/073 , H10N30/086 , H10N30/097 , H10N30/87 , H10N30/88 , H10N30/853
CPC分类号: H10N30/204 , G02B1/115 , G02B26/004 , G02B27/0176 , H10N30/02 , H10N30/06 , H10N30/073 , H10N30/086 , H10N30/097 , H10N30/8548 , H10N30/8554 , H10N30/878 , H10N30/883 , G02B2027/0178
摘要: A multilayer actuator includes a primary electrode, a secondary electrode overlapping at least a portion of the primary electrode, and an electroactive layer disposed between and abutting the primary electrode and the secondary electrode. The multilayer actuator further includes a primary antireflective coating overlapping at least a portion of the primary electrode opposite the electroactive layer, a secondary antireflective coating overlapping at least a portion of the secondary electrode opposite the electroactive layer, and a barrier layer overlapping the secondary antireflective coating opposite the secondary electrode.
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公开(公告)号:US20230320217A1
公开(公告)日:2023-10-05
申请号:US18181093
申请日:2023-03-09
发明人: Hironori FURUTA , Toru KOSAKA , Takahito SUZUKI , Kenichi TANIGAWA , Takuma ISHIKAWA , Yutaka KITAJIMA
IPC分类号: H10N30/073 , H10N30/00 , H10N30/06
CPC分类号: H10N30/073 , H10N30/10516 , H10N30/06
摘要: A piezoelectric-body film joint substrate includes a substrate, a substrate electrode provided on the substrate, a first piezoelectric-body film stuck on the substrate electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, and a second piezoelectric-body film stuck on the first upper electrode film and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film.
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公开(公告)号:US12101080B2
公开(公告)日:2024-09-24
申请号:US18302440
申请日:2023-04-18
申请人: Soitec
发明人: Arnaud Castex , Daniel Delprat , Bernard Aspar , Ionut Radu
IPC分类号: H03H9/02 , H03H3/04 , H03H3/10 , H03H9/64 , H10N30/00 , H10N30/072 , H10N30/073 , H10N30/082 , H10N30/086 , H10N30/853 , H10N35/01
CPC分类号: H03H9/02834 , H03H3/04 , H03H3/10 , H03H9/02574 , H10N30/072 , H10N30/073 , H10N30/704 , H10N30/8542 , H03H9/6496 , H10N30/082 , H10N30/086 , H10N35/01 , Y10T29/42
摘要: The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
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公开(公告)号:US12052921B2
公开(公告)日:2024-07-30
申请号:US18049529
申请日:2022-10-25
申请人: Soitec
发明人: Bruno Ghyselen , Jean-Marc Bethoux
IPC分类号: H01L21/265 , H10N30/073 , H10N30/853
CPC分类号: H10N30/073 , H01L21/26506 , H10N30/853
摘要: A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.
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公开(公告)号:US20240213944A1
公开(公告)日:2024-06-27
申请号:US18597647
申请日:2024-03-06
申请人: Soitec
发明人: Djamel Belhachemi , Thierry Barge
IPC分类号: H03H3/02 , H10N30/00 , H10N30/05 , H10N30/073 , H10N30/853
CPC分类号: H03H3/02 , H10N30/05 , H10N30/073 , H10N30/10516 , H10N30/8542 , Y10T29/42
摘要: A method for manufacturing a substrate for a radiofrequency filter by joining a piezoelectric layer to a carrier substrate via an electrically insulating layer, wherein the method comprises depositing the electrically insulating layer by spin coating an oxide belonging to the family of SOGs (spin-on glasses) on the surface of the piezoelectric layer to be joined to the carrier substrate, followed by an anneal for densifying the electrically insulating layer before joining the piezoelectric layer to the carrier substrate via the electrically insulating layer.
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