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公开(公告)号:US20180298484A1
公开(公告)日:2018-10-18
申请号:US16005752
申请日:2018-06-12
申请人: YOUTEC CO., LTD.
发明人: Takeshi KIJIMA , Yuuji HONDA
摘要: To provide a ferroelectric film having improved uniformity in the composition of the film surface and the composition of the entire film, or a manufacturing method thereof. An aspect of the present invention is a ferroelectric film including a ferroelectric coated and sintered crystal film; and a ferroelectric crystal film formed on the ferroelectric coated and sintered crystal film, by a sputtering method, wherein the ferroelectric coated and sintered crystal film is formed by coating a solution having a metal compound containing, in an organic solvent, all of or a part of constituent metals of the ferroelectric crystal film and a partial polycondensation product thereof and by heating the same to be crystallized.
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公开(公告)号:US20170158571A1
公开(公告)日:2017-06-08
申请号:US15325592
申请日:2015-04-27
申请人: YOUTEC CO., LTD.
发明人: Takeshi KIJIMA
IPC分类号: C04B41/50 , C04B35/472 , C04B35/622 , H01L41/39 , C04B41/87 , H01L41/047 , H01L41/187 , C04B35/491 , C04B41/00
CPC分类号: C04B41/5041 , B32B18/00 , C04B35/472 , C04B35/491 , C04B35/62218 , C04B41/009 , C04B41/87 , C04B2235/3234 , C04B2235/3249 , C04B2235/3296 , C04B2235/768 , C04B2237/34 , C04B2237/346 , C04B2237/348 , C04B2237/704 , C23C14/088 , H01L41/0478 , H01L41/0815 , H01L41/1876 , H01L41/316 , H01L41/318 , H01L41/319 , H01L41/39
摘要: To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(Zr1-ATiA)O3 film; and a Pb(Zr1-xTix)O3 film formed on the Pb(Zr1-ATiA)O3 film; wherein the A and x satisfy the following Formulae 1 to 3: 0≦A≦0.1 Formula 1 0.1
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公开(公告)号:US20160184967A1
公开(公告)日:2016-06-30
申请号:US14911594
申请日:2013-08-13
申请人: YOUTEC CO., LTD.
发明人: Tsutomu UJIIE , Yuuji HONDA
CPC分类号: B24C5/04 , B05B7/1486 , B05B15/18 , B24C1/003
摘要: To suppress the generation, on a surface to be cleaned of a substrate after cleaning, of metal contamination caused by erosion of an inner wall of a path of a nozzle. One aspect of the present invention is a nozzle 11 that causes CO2 particles to be ejected to a substrate, wherein a hard film having a Vickers hardness of Hv 1000 to 5000 is formed on an inner wall of the nozzle.
摘要翻译: 为了抑制在清洁后的基板的待清洁表面上产生由喷嘴的路径的内壁的侵蚀引起的金属污染。 本发明的一个方面是将CO 2颗粒喷射到基板上的喷嘴11,其中在喷嘴的内壁上形成维氏硬度为Hv 1000-5000的硬膜。
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公开(公告)号:US20180230603A1
公开(公告)日:2018-08-16
申请号:US15956185
申请日:2018-04-18
申请人: YOUTEC CO., LTD.
发明人: Takeshi KIJIMA , Yuuji HONDA , Koichi FURUYAMA
IPC分类号: C23F1/00 , H01L41/047 , C23C14/08 , C23C14/34 , H01L41/29 , H01L41/187 , H01L41/318
CPC分类号: C23F1/00 , C01P2006/40 , C23C14/088 , C23C14/3414 , H01L41/0478 , H01L41/1876 , H01L41/29 , H01L41/318
摘要: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1−xRux)O3 film and a PZT film formed on the first Sr(Ti1−xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01≤x≤0.4 formula 1
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公开(公告)号:US09966527B2
公开(公告)日:2018-05-08
申请号:US15215879
申请日:2016-07-21
申请人: YOUTEC CO., LTD.
发明人: Takeshi Kijima , Yuuji Honda
CPC分类号: H01L41/39 , C01G23/003 , C01G33/006 , C23C18/1216 , C23C18/1225 , C23C18/1254 , C23C18/1295 , H01L21/02197 , H01L21/02282 , H01L41/187
摘要: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.
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公开(公告)号:US09793464B2
公开(公告)日:2017-10-17
申请号:US15288056
申请日:2016-10-07
申请人: YOUTEC CO., LTD.
发明人: Takeshi Kijima , Yuuji Honda
IPC分类号: B05D5/00 , H01L41/08 , H01L41/187 , H01L41/318 , B05D1/00 , B05D3/02 , B05D7/00
CPC分类号: H01L41/0815 , B05D1/005 , B05D3/0254 , B05D5/00 , B05D7/54 , H01L41/187 , H01L41/1873 , H01L41/1878 , H01L41/318 , Y10T428/26
摘要: To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3≦X≦0.7.
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公开(公告)号:US20170133048A1
公开(公告)日:2017-05-11
申请号:US15319149
申请日:2014-06-20
申请人: YOUTEC CO., LTD.
发明人: Kouji ABE , Toshiyuki WATANABE , Masafumi TANAKA , Kohei OKUDAIRA , Hiroyasu SEKINO , Yuuji HONDA
IPC分类号: G11B5/85 , G11B5/72 , C23C16/44 , C23C16/455 , C23C16/50 , C23C16/458
CPC分类号: G11B5/85 , C23C16/26 , C23C16/4412 , C23C16/455 , C23C16/458 , C23C16/50 , C23C16/503 , G11B5/72 , G11B5/8408 , H01J37/32027 , H01J37/32532
摘要: A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
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公开(公告)号:US20150236244A1
公开(公告)日:2015-08-20
申请号:US14620496
申请日:2015-02-12
申请人: YOUTEC CO., LTD.
发明人: Takeshi KIJIMA , Yuuji HONDA , Koichi FURUYAMA
IPC分类号: H01L41/187 , H01L41/27 , C23C28/00
CPC分类号: H01L41/319 , H01L41/0815
摘要: To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrO2 film oriented in (200), a Pt film that is formed on the ZrO2 film and is oriented in (200) and a piezoelectric film formed on the Pt film.
摘要翻译: 得到压电性优异的压电薄膜。 本发明的一个方面涉及包括在(200)中取向的ZrO 2膜的铁电陶瓷,形成在ZrO 2膜上并在(200)中取向的Pt膜和形成在Pt膜上的压电膜。
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公开(公告)号:US10017874B2
公开(公告)日:2018-07-10
申请号:US13690263
申请日:2012-11-30
发明人: Takeshi Kijima , Yuuji Honda , Daisuke Iitsuka , Kenjirou Hata
IPC分类号: C30B1/02 , C30B23/08 , C30B29/22 , C30B29/68 , C30B7/06 , C30B23/02 , H01L41/318 , H01L41/319
CPC分类号: C30B1/023 , C30B7/06 , C30B23/02 , C30B23/08 , C30B29/22 , C30B29/68 , H01L41/318 , H01L41/319 , Y10T117/10
摘要: There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.
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公开(公告)号:US09976219B2
公开(公告)日:2018-05-22
申请号:US14620470
申请日:2015-02-12
申请人: YOUTEC CO., LTD.
发明人: Takeshi Kijima , Yuuji Honda , Koichi Furuyama
IPC分类号: C01G5/00 , C23C14/08 , C23C14/34 , C23F1/00 , H01L41/187 , H01L41/047 , H01L41/29 , H01L41/318
CPC分类号: C23F1/00 , C01P2006/40 , C23C14/088 , C23C14/3414 , H01L41/0478 , H01L41/1876 , H01L41/29 , H01L41/318
摘要: To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1-xRux)O3 film and a PZT film formed on the first Sr(Ti1-xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01≤x≤0.4 formula 1
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