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公开(公告)号：US20180298484A1
公开(公告)日：2018-10-18
申请号：US16005752
申请日：2018-06-12
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yuuji HONDA
摘要： To provide a ferroelectric film having improved uniformity in the composition of the film surface and the composition of the entire film, or a manufacturing method thereof. An aspect of the present invention is a ferroelectric film including a ferroelectric coated and sintered crystal film; and a ferroelectric crystal film formed on the ferroelectric coated and sintered crystal film, by a sputtering method, wherein the ferroelectric coated and sintered crystal film is formed by coating a solution having a metal compound containing, in an organic solvent, all of or a part of constituent metals of the ferroelectric crystal film and a partial polycondensation product thereof and by heating the same to be crystallized.
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公开(公告)号：US20170158571A1
公开(公告)日：2017-06-08
申请号：US15325592
申请日：2015-04-27
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA
IPC分类号： C04B41/50 , C04B35/472 , C04B35/622 , H01L41/39 , C04B41/87 , H01L41/047 , H01L41/187 , C04B35/491 , C04B41/00
CPC分类号： C04B41/5041 , B32B18/00 , C04B35/472 , C04B35/491 , C04B35/62218 , C04B41/009 , C04B41/87 , C04B2235/3234 , C04B2235/3249 , C04B2235/3296 , C04B2235/768 , C04B2237/34 , C04B2237/346 , C04B2237/348 , C04B2237/704 , C23C14/088 , H01L41/0478 , H01L41/0815 , H01L41/1876 , H01L41/316 , H01L41/318 , H01L41/319 , H01L41/39
摘要： To improve a piezoelectric property. One aspect of the present invention is ferroelectric ceramics including: a Pb(Zr1-ATiA)O3 film; and a Pb(Zr1-xTix)O3 film formed on the Pb(Zr1-ATiA)O3 film; wherein the A and x satisfy the following Formulae 1 to 3: 0≦A≦0.1 Formula 1 0.1
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公开(公告)号：US20180230603A1
公开(公告)日：2018-08-16
申请号：US15956185
申请日：2018-04-18
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yuuji HONDA , Koichi FURUYAMA
IPC分类号： C23F1/00 , H01L41/047 , C23C14/08 , C23C14/34 , H01L41/29 , H01L41/187 , H01L41/318
CPC分类号： C23F1/00 , C01P2006/40 , C23C14/088 , C23C14/3414 , H01L41/0478 , H01L41/1876 , H01L41/29 , H01L41/318
摘要： To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti1−xRux)O3 film and a PZT film formed on the first Sr(Ti1−xRux)O3 film, wherein the x satisfies a formula 1 below. 0.01≤x≤0.4 formula 1
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公开(公告)号：US20150236244A1
公开(公告)日：2015-08-20
申请号：US14620496
申请日：2015-02-12
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yuuji HONDA , Koichi FURUYAMA
IPC分类号： H01L41/187 , H01L41/27 , C23C28/00
CPC分类号： H01L41/319 , H01L41/0815
摘要： To obtain a piezoelectric film having excellent piezoelectric properties. One aspect of the present invention relates to ferroelectric ceramics including a ZrO2 film oriented in (200), a Pt film that is formed on the ZrO2 film and is oriented in (200) and a piezoelectric film formed on the Pt film.
摘要翻译： 得到压电性优异的压电薄膜。 本发明的一个方面涉及包括在（200）中取向的ZrO 2膜的铁电陶瓷，形成在ZrO 2膜上并在（200）中取向的Pt膜和形成在Pt膜上的压电膜。
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5.发明申请公开(公告)号：US20150183190A1
公开(公告)日：2015-07-02
申请号：US14575109
申请日：2014-12-18
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yuuji HONDA , Yukinori TANI
IPC分类号： B32B18/00 , H01L41/187 , C01G25/00 , G01N23/207
CPC分类号： H01L41/1876 , C04B35/491 , C04B2235/787 , H01L41/0815 , H01L41/319
摘要： To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention is a piezoelectric film having a crystal oriented in the c-axis direction and a crystal oriented in the a-axis direction, in which, when denoting the amount of a (004) component of the crystal oriented in the c-axis direction by C and denoting the amount of a (400) component of the crystal oriented in the a-axis direction by A, the piezoelectric film satisfies a formula 1 below. C/(A+C)≧0.1 formula 1
摘要翻译： 得到压电性优异的压电薄膜。 本发明的一个方面是具有在c轴方向上定向的晶体和沿a轴方向取向的晶体的压电膜，其中当表示定向在晶体的晶体的（004）分量的量时 c轴方向为C，表示a轴方向的（400）成分的A量的量，压电膜满足下式1。 C /（A + C）≥0.1式1
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公开(公告)号：US20150147587A1
公开(公告)日：2015-05-28
申请号：US14543024
申请日：2014-11-17
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yuuji HONDA , Yukinori TANI
IPC分类号： H01L41/187 , H01L41/319
CPC分类号： H01L41/1876 , C04B35/491 , C04B2235/787 , H01L41/0815 , H01L41/318 , H01L41/319 , Y10T428/12549
摘要： An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiO3 film formed on the Pt film, and a PZT film formed on the SrTiO3, wherein the stacked film is formed by repeating sequentially N times a first ZrO2 film and a Y2O3 film, and a second ZrO2 film is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.
摘要翻译： 本发明的一个方面涉及包括在Si衬底上形成的叠层膜，在层叠膜上形成的Pt膜，在Pt膜上形成的SrTiO 3膜和在SrTiO 3上形成的PZT膜的铁电陶瓷，其中堆叠 通过重复N次第一ZrO 2膜和Y 2 O 3膜重复形成膜，并且在重复N次形成的膜上形成第二ZrO 2膜，N为1以上的整数。 叠层膜的Y /（Zr + Y）的比例优选为30％以下。
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7.发明申请公开(公告)号：US20130192878A1
公开(公告)日：2013-08-01
申请号：US13749770
申请日：2013-01-25
申请人： YOUTEC CO., LTD.
IPC分类号： H01L41/39 , H01L41/187
CPC分类号： H01L41/39 , H01L41/1873 , H01L41/1876 , H01L41/318 , H01L41/319
摘要： A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.
摘要翻译： 一种制造铁电体膜的方法，包括以下步骤：在基材上形成含有不少于1重量％的氢的可燃材料膜; 在可燃材料膜上形成包含铁电材料的非晶薄膜; 并且通过在氧气氛中加热可燃材料膜和非晶态薄膜来燃烧可燃材料膜，同时向非晶薄膜供应氢，从而氧化和结晶非晶薄膜，从而在基板上形成第一铁电体膜。
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8.发明申请公开(公告)号：US20180240962A1
公开(公告)日：2018-08-23
申请号：US15945801
申请日：2018-04-05
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yuuji HONDA
CPC分类号： H01L41/39 , C01G23/003 , C01G33/006 , C23C18/1216 , C23C18/1225 , C23C18/1254 , C23C18/1295 , H01L21/02197 , H01L21/02282 , H01L41/187
摘要： To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.
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公开(公告)号：US20170179367A1
公开(公告)日：2017-06-22
申请号：US15373907
申请日：2016-12-09
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yuuji HONDA , Yasuaki HAMADA
IPC分类号： H01L41/08 , H01L41/09 , H02N2/10 , H02K1/12 , H01L41/314 , H01L41/187 , H02K1/27 , H01L41/083
CPC分类号： H01L41/081 , H01L41/0477 , H01L41/0815 , H01L41/083 , H01L41/09 , H01L41/0946 , H01L41/0973 , H01L41/1876 , H01L41/314 , H01L41/319 , H02K1/12 , H02K1/27 , H02K1/278 , H02K11/20 , H02K11/21 , H02K11/24 , H02N2/10 , H02N2/163
摘要： To enhance properties of a ferromagnetic film formed on a substrate. One aspect of the present invention is a film structure body having a single crystal substrate, and a first ferromagnetic film oriented and formed on the single crystal substrate.
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公开(公告)号：US20160190429A1
公开(公告)日：2016-06-30
申请号：US14963359
申请日：2015-12-09
申请人： YOUTEC CO., LTD.
发明人： Takeshi KIJIMA , Yasuaki HAMADA , Takeshi NOMURA
IPC分类号： H01L41/08 , H01L41/187 , H01L41/18
CPC分类号： H01L41/0805 , H01L41/0478 , H01L41/1876 , H01L41/318
摘要： An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.
摘要翻译： 目的是使压电薄膜在比以往的压电薄膜高的电压下进行压电操作。 本发明的一个方面是一种压电薄膜，其中作为通过测量压电薄膜的压电特性而获得的结果所获得的结果的压电蝶形曲线的电压为最小值的电压大于2V或更大于矫顽电压的矫顽电压 是通过测量所述压电膜的滞后特性而得到的结果的滞后曲线。 压电膜包括反铁电体膜和形成在反铁电体膜上的强电介质膜。
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