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公开(公告)号：US20240048121A1
公开(公告)日：2024-02-08
申请号：US18265067
申请日：2021-03-26
发明人： Akio KONISHI , Hiroaki KANAMORI , Akira ANDO , Yuuji HONDA
摘要： A membrane structure (10) includes: a substrate being a Si substrate or an SOI substrate; a buffer film containing ZrO2 and formed on the substrate; and a piezoelectric film (11) formed on the buffer film, a polarization direction in the piezoelectric film (11) being preferentially oriented parallel to the substrate.
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2.发明公开公开(公告)号：US20230320228A1
公开(公告)日：2023-10-05
申请号：US18179929
申请日：2023-03-07
发明人： Hironori FURUTA , Toru KOSAKA , Takahito SUZUKI , Kenichi TANIGAWA , Takuma ISHIKAWA , Yutaka KITAJIMA , Akio KONISHI , Hiroaki KANAMORI , Takeshi IIZUKA
IPC分类号： H10N39/00 , B06B1/06 , H10N30/00 , H10N30/50 , H10N30/853 , H10N30/88 , H10N30/057 , G01S15/08 , G01S7/521
CPC分类号： H10N39/00 , B06B1/0611 , H10N30/10516 , H10N30/1071 , H10N30/50 , H10N30/853 , H10N30/8536 , H10N30/8542 , H10N30/8554 , H10N30/88 , H10N30/057 , G01S15/08 , G01S7/521
摘要： A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.
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公开(公告)号：US11785854B2
公开(公告)日：2023-10-10
申请号：US16762212
申请日：2018-11-09
发明人： Takeshi Kijima , Yasuaki Hamada
IPC分类号： H01L41/319 , H01L41/187 , C23C14/35 , C23C14/16 , C23C14/30 , C23C14/08 , H10N30/079 , H10N30/87 , H10N30/853 , H10N30/076 , H10N30/078
CPC分类号： H10N30/079 , C23C14/08 , C23C14/082 , C23C14/083 , C23C14/16 , C23C14/30 , C23C14/35 , H10N30/8554 , H10N30/87 , H10N30/076 , H10N30/078
摘要： A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).
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4.发明公开公开(公告)号：US20230320219A1
公开(公告)日：2023-10-05
申请号：US18179106
申请日：2023-03-06
发明人： Hironori FURUTA , Toru KOSAKA , Takahito SUZUKI , Kenichi TANIGAWA , Takuma ISHIKAWA , Yutaka KITAJIMA , Akio KONISHI , Hiroaki KANAMORI , Takeshi IIZUKA
IPC分类号： H10N30/00 , H10N30/093 , H10N30/853 , H10N30/87
CPC分类号： H10N30/1071 , H10N30/093 , H10N30/8554 , H10N30/8536 , H10N30/8542 , H10N30/877
摘要： A piezoelectric film integrated device include a substrate; a first electrode provided on the substrate; a second electrode provided on the substrate; a first monocrystalline piezoelectric film provided on the first electrode; a second monocrystalline piezoelectric film provided on the second electrode and having a crystal structure different from a crystal structure of the first monocrystalline piezoelectric film; a third electrode provided on the first monocrystalline piezoelectric film; and a fourth electrode provided on the second monocrystalline piezoelectric film.
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