公开(公告)号：US10407789B2

公开(公告)日：2019-09-10

申请号：US15835067

申请日：2017-12-07

申请人： Applied Materials, Inc.

发明人： Balaji Ganapathy ,  Ankur Kadam ,  Prerna S. Goradia ,  Laksheswar Kalita ,  Tapash Chakraborty ,  Vijay Bhan Sharma

IPC分类号： C25D3/44 ,  C25D5/44 ,  C25D5/48 ,  C25D5/18 ,  C25D7/00 ,  C25D5/50 ,  C25D9/08 ,  C25D11/04 ,  C25D5/02

摘要： In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

公开(公告)号：US20230032638A1

公开(公告)日：2023-02-02

申请号：US17967556

申请日：2022-10-17

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC分类号： H01L41/319 ,  C23C14/54 ,  C23C14/06 ,  H01L41/08 ,  C23C14/35 ,  H01L41/187 ,  H01L41/047 ,  H01L41/316

摘要： A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

公开(公告)号：US20220285129A1

公开(公告)日：2022-09-08

申请号：US17684911

申请日：2022-03-02

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman Sangle ,  Nilesh Patil ,  Vijay Bhan Sharma ,  Visweswaren Sivaramakrishnan

IPC分类号： H01J37/32 ,  H01J37/34 ,  C23C14/34 ,  C23C14/08

摘要： A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

公开(公告)号：US20210143320A1

公开(公告)日：2021-05-13

申请号：US16691570

申请日：2019-11-21

申请人： Applied Materials, Inc

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Yuan Xue ,  Uday Pai ,  Bharatwaj Ramakrishnan ,  Ankur Kadam

IPC分类号： H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316

摘要： A piezoelectric device includes a substrate, a thermal oxide layer on the substrate, a metal or metal oxide adhesion layer on the thermal oxide layer, a lower electrode on the metal oxide adhesion layer, a seed layer on the lower electrode, a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer on the seed layer, and an upper electrode on the PMNPT piezoelectric layer.

公开(公告)号：US11489105B2

公开(公告)日：2022-11-01

申请号：US16691569

申请日：2019-11-21

申请人： Applied Materials, Inc

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC分类号： C23C14/35 ,  H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/316 ,  C23C14/06 ,  C23C14/54 ,  H01L41/187

摘要： A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

公开(公告)号：US20220325398A1

公开(公告)日：2022-10-13

申请号：US17229492

申请日：2021-04-13

申请人： Applied Materials, Inc.

发明人： Vijay Bhan Sharma ,  Abhijeet Laxman Sangle ,  Ankur Anant Kadam ,  Suresh Chand Seth ,  Richa Pandey ,  Dinesh Kabra ,  Valipe Ramgopal Rao

IPC分类号： C23C14/06 ,  C23C14/02 ,  C23C14/24 ,  C23C14/54 ,  C23C14/58 ,  B05D1/00 ,  B05D3/00

摘要： A hybrid halide perovskite film and methods of forming a hybrid halide perovskite film on a substrate are described. The film is formed on the substrate by depositing an organic solution on a substrate, heating the substrate and the organic solution to form an organic layer on the substrate, depositing an inorganic layer on the organic layer, and heating the substrate having the inorganic layer thereon to form a hybrid halide perovskite film. In some embodiments, the hybrid halide perovskite film comprises a CH[NH2]2+MX3 compound, where M is selected from the group consisting of Sn, Pb, Bi, Mg and Mn, and where X is selected from the group consisting of I, Br and Cl. In other embodiments, the hybrid halide perovskite film comprises a FAMX3 compound. Methods of forming a piezoelectric device are also disclosed.

公开(公告)号：US20220320417A1

公开(公告)日：2022-10-06

申请号：US17220136

申请日：2021-04-01

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman Sangle ,  Suresh Chand Seth ,  Vijay Bhan Sharma ,  Bharatwaj Ramakrishnan ,  Ankur Anant Kadam

IPC分类号： H01L41/316 ,  H01L41/18 ,  H01L41/29

摘要： Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO3 and SrRuO3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.

公开(公告)号：US20210143319A1

公开(公告)日：2021-05-13

申请号：US16691569

申请日：2019-11-21

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC分类号： H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/316 ,  C23C14/06 ,  C23C14/54 ,  C23C14/35

摘要： A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.