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公开(公告)号:US20220325398A1
公开(公告)日:2022-10-13
申请号:US17229492
申请日:2021-04-13
发明人: Vijay Bhan Sharma , Abhijeet Laxman Sangle , Ankur Anant Kadam , Suresh Chand Seth , Richa Pandey , Dinesh Kabra , Valipe Ramgopal Rao
摘要: A hybrid halide perovskite film and methods of forming a hybrid halide perovskite film on a substrate are described. The film is formed on the substrate by depositing an organic solution on a substrate, heating the substrate and the organic solution to form an organic layer on the substrate, depositing an inorganic layer on the organic layer, and heating the substrate having the inorganic layer thereon to form a hybrid halide perovskite film. In some embodiments, the hybrid halide perovskite film comprises a CH[NH2]2+MX3 compound, where M is selected from the group consisting of Sn, Pb, Bi, Mg and Mn, and where X is selected from the group consisting of I, Br and Cl. In other embodiments, the hybrid halide perovskite film comprises a FAMX3 compound. Methods of forming a piezoelectric device are also disclosed.