公开(公告)号：US20240114800A1

公开(公告)日：2024-04-04

申请号：US18272438

申请日：2021-01-18

Applicant: Applied Materials, Inc.

Inventor： Vijay Bhan Sharma ,  Yuan Xue ,  Abhijeet Laxman Sangle ,  Bharatwaj Ramakrishnan ,  Yi Yang ,  Suresh Chand Seth ,  Ankur Anant Kadam

IPC: H10N30/853 ,  C04B35/493 ,  C04B35/499 ,  C23C14/02 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  C30B23/02 ,  C30B23/08 ,  C30B29/30 ,  C30B29/32 ,  C30B33/02 ,  H01J37/34 ,  H10N30/00 ,  H10N30/04 ,  H10N30/076 ,  H10N30/079

CPC classification number: H10N30/8548 ,  C04B35/493 ,  C04B35/499 ,  C23C14/024 ,  C23C14/082 ,  C23C14/083 ,  C23C14/3407 ,  C23C14/5806 ,  C30B23/025 ,  C30B23/08 ,  C30B29/30 ,  C30B29/32 ,  C30B33/02 ,  H01J37/3426 ,  H10N30/04 ,  H10N30/076 ,  H10N30/079 ,  H10N30/10516 ,  C04B2235/3234 ,  C04B2235/3255 ,  H01J2237/332

Abstract: A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.

公开(公告)号：US20220325398A1

公开(公告)日：2022-10-13

申请号：US17229492

申请日：2021-04-13

Applicant: Applied Materials, Inc.

Inventor： Vijay Bhan Sharma ,  Abhijeet Laxman Sangle ,  Ankur Anant Kadam ,  Suresh Chand Seth ,  Richa Pandey ,  Dinesh Kabra ,  Valipe Ramgopal Rao

IPC: C23C14/06 ,  C23C14/02 ,  C23C14/24 ,  C23C14/54 ,  C23C14/58 ,  B05D1/00 ,  B05D3/00

Abstract: A hybrid halide perovskite film and methods of forming a hybrid halide perovskite film on a substrate are described. The film is formed on the substrate by depositing an organic solution on a substrate, heating the substrate and the organic solution to form an organic layer on the substrate, depositing an inorganic layer on the organic layer, and heating the substrate having the inorganic layer thereon to form a hybrid halide perovskite film. In some embodiments, the hybrid halide perovskite film comprises a CH[NH2]2+MX3 compound, where M is selected from the group consisting of Sn, Pb, Bi, Mg and Mn, and where X is selected from the group consisting of I, Br and Cl. In other embodiments, the hybrid halide perovskite film comprises a FAMX3 compound. Methods of forming a piezoelectric device are also disclosed.

公开(公告)号：US20220320417A1

公开(公告)日：2022-10-06

申请号：US17220136

申请日：2021-04-01

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman Sangle ,  Suresh Chand Seth ,  Vijay Bhan Sharma ,  Bharatwaj Ramakrishnan ,  Ankur Anant Kadam

IPC: H01L41/316 ,  H01L41/18 ,  H01L41/29

Abstract: Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO3 and SrRuO3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.