- 专利标题： FABRICATION OF PIEZOELECTRIC DEVICE WITH PMNPT LAYER
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申请号： US16691570申请日： 2019-11-21
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公开(公告)号： US20210143320A1公开(公告)日： 2021-05-13
- 发明人: Abhijeet Laxman Sangle , Vijay Bhan Sharma , Yuan Xue , Uday Pai , Bharatwaj Ramakrishnan , Ankur Kadam
- 申请人： Applied Materials, Inc
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc
- 当前专利权人： Applied Materials, Inc
- 当前专利权人地址： US CA Santa Clara
- 优先权： CN201911101682.4 20191112
- 主分类号： H01L41/319
- IPC分类号： H01L41/319 ; H01L41/047 ; H01L41/08 ; H01L41/187 ; H01L41/29 ; H01L41/316
摘要：
A piezoelectric device includes a substrate, a thermal oxide layer on the substrate, a metal or metal oxide adhesion layer on the thermal oxide layer, a lower electrode on the metal oxide adhesion layer, a seed layer on the lower electrode, a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer on the seed layer, and an upper electrode on the PMNPT piezoelectric layer.
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