公开(公告)号：US12084388B2

公开(公告)日：2024-09-10

申请号：US18096568

申请日：2023-01-13

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chih-Hsing Wang ,  Cheng-Jung Ko ,  Chuen-Ming Gee ,  Chih-Wei Kuo ,  Hsueh-I Chen ,  Jun-Bin Huang ,  Ying-Tsung Chao

IPC: C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/64 ,  C04B35/645 ,  C30B23/00 ,  C30B35/00

CPC classification number: C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C04B2235/3839 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/661 ,  C30B23/00 ,  C30B35/002

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.