公开(公告)号：US10033152B1

公开(公告)日：2018-07-24

申请号：US14850177

申请日：2015-09-10

申请人： Vivek V. Nagarkar ,  Zsolt Marton ,  Harish B. Bhandari

发明人： Vivek V. Nagarkar ,  Zsolt Marton ,  Harish B. Bhandari

IPC分类号： H01S5/028 ,  C23C14/22 ,  C23C14/00

摘要： An antireflective structure and a fabrication method thereof are disclosed. In one aspect, the antireflective structure includes a substrate, a buffer layer on the substrate, and an anticorrosion layer on the buffer layer, wherein the corrosion resistant layer comprises a densely packed cubic lattice structure. In one aspect, the fabrication method includes depositing a first buffer layer on a substrate in an e-beam deposition process, and depositing a first anticorrosion layer on the first buffer layer in an e-beam deposition process, wherein the substrate comprises sapphire, the first corrosion resistant layer comprises lutetia, and the first buffer layer comprise silicon carbide.

公开(公告)号：US09916958B1

公开(公告)日：2018-03-13

申请号：US14608777

申请日：2015-01-29

申请人： Harish B. Bhandari ,  Vivek V. Nagarkar ,  Olena E. Ovechkina ,  Henry J. Frisch ,  Klaus Attenkofer ,  John M. Smedley

发明人： Harish B. Bhandari ,  Vivek V. Nagarkar ,  Olena E. Ovechkina ,  Henry J. Frisch ,  Klaus Attenkofer ,  John M. Smedley

IPC分类号： H01J9/00 ,  H01J9/12 ,  H01J1/34 ,  H02S50/15 ,  G01N21/63 ,  C23C14/02 ,  C23C14/16 ,  C23C14/54 ,  C23C14/34

CPC分类号： H01J9/12 ,  C23C14/0036 ,  C23C14/06 ,  C23C14/3414 ,  C23C14/548 ,  C30B11/00 ,  H01J1/34 ,  H02S50/15

摘要： Methods and systems for fabricating a film, such as, for example, a photocathode, having a tailored band structure and thin-film components that can be tailored for specific applications, such as, for example photocathode having a high quantum efficiency, and simple components fabricated by those methods.

公开(公告)号：US09417343B1

公开(公告)日：2016-08-16

申请号：US14729287

申请日：2015-06-03

申请人： Harish B. Bhandari ,  Vivek V. Nagarkar ,  Olena E. Ovechkina

发明人： Harish B. Bhandari ,  Vivek V. Nagarkar ,  Olena E. Ovechkina

IPC分类号： G01T1/20 ,  G01T3/06 ,  C09K11/77

CPC分类号： G01T3/06 ,  C09K11/7733

摘要： A neutron detector and a method for fabricating a neutron detector. The neutron detector includes a photodetector, and a solid-state scintillator operatively coupled to the photodetector. In one aspect, the method for fabricating a neutron detector includes providing a photodetector, and depositing a solid-state scintillator on the photodetector to form a detector structure.

摘要翻译： 一种中子探测器和一种制造中子探测器的方法。 中子检测器包括光电检测器和可操作地耦合到光电检测器的固态闪烁体。 一方面，制造中子检测器的方法包括提供光电检测器，并在该光电检测器上沉积固态闪烁体以形成检测器结构。

公开(公告)号：US20110163062A1

公开(公告)日：2011-07-07

申请号：US12908323

申请日：2010-10-20

申请人： Roy G. GORDON ,  Harish B. BHANDARI ,  Yeung AU ,  Youbo LIN

发明人： Roy G. GORDON ,  Harish B. BHANDARI ,  Yeung AU ,  Youbo LIN

IPC分类号： H05K3/22 ,  H05K3/00 ,  C25D5/02

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

摘要翻译： 提供了一种用于集成电路中铜线集成电路的互连结构及其制造方法。 含有Mn，Cr或V的层形成了阻碍铜从电线中扩散的阻挡层，从而保护绝缘体免于过早击穿，并保护晶体管免受铜的退化。 含Mn，Cr或V的层还促进了铜和绝缘体之间的强粘附，从而在制造和使用过程中保持了器件的机械完整性，并且在使用器件期间防止铜的电迁移失效，并保护 铜从其周围的氧气或水中腐蚀。 在形成这样的集成电路中，本发明的某些实施例提供了在铜表面上选择性地沉积Mn，Cr，V或Co的方法，同时减少或甚至防止在绝缘体表面上沉积Mn，Cr，V或Co。 还提供了使用含有Mn，Cr或V的前体和含碘或溴的前体的铜的催化沉积。

公开(公告)号：US08569165B2

公开(公告)日：2013-10-29

申请号：US12908323

申请日：2010-10-20

申请人： Roy Gerald Gordon ,  Harish B. Bhandari ,  Yeung Au ,  Youbo Lin

发明人： Roy Gerald Gordon ,  Harish B. Bhandari ,  Yeung Au ,  Youbo Lin

IPC分类号： H01L21/4763 ,  H01L21/768

CPC分类号： H01L23/53238 ,  C23C16/18 ,  C23C16/34 ,  C23C16/401 ,  H01L21/28506 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76853 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.

公开(公告)号：US08957386B1

公开(公告)日：2015-02-17

申请号：US13564672

申请日：2012-08-01

申请人： Vivek V. Nagarkar ,  Harish B. Bhandari

发明人： Vivek V. Nagarkar ,  Harish B. Bhandari

IPC分类号： G01T1/20 ,  G01T1/202 ,  C09K11/77

CPC分类号： G01T1/2023 ,  C09K11/7719 ,  C09K11/7733 ,  C23C14/0694 ,  C23C14/24 ,  C23C14/243 ,  G01T1/202 ,  G21K2004/06

摘要： Strontium halide scintillators, calcium halide scintillators, cerium halide scintillators, cesium barium halide scintillators, and related devices and methods are provided.

摘要翻译： 提供了卤化钪闪烁体，卤化钙闪烁体，卤化铈闪烁体，卤化钡卤化物闪烁体，以及相关的装置和方法。

公开(公告)号：US08735830B1

公开(公告)日：2014-05-27

申请号：US13451446

申请日：2012-04-19

申请人： Vivek Nagarkar ,  Harish B. Bhandari ,  Valeriy Gaysinskiy

发明人： Vivek Nagarkar ,  Harish B. Bhandari ,  Valeriy Gaysinskiy

IPC分类号： G01T1/10

CPC分类号： G01T1/202 ,  G01T1/2008

摘要： Zinc telluride scintillators and related devices and methods are provided.

摘要翻译： 提供碲化锌闪烁体及相关装置及方法。