公开(公告)号：US20230387267A1

公开(公告)日：2023-11-30

申请号：US18446905

申请日：2023-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shahaji B. More ,  Shih-Chieh Chang

IPC分类号： H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8234 ,  H01L21/04 ,  H01L29/06

CPC分类号： H01L29/66795 ,  H01L29/41791 ,  H01L29/7856 ,  H01L2029/7858 ,  H01L21/823431 ,  H01L21/0455 ,  H01L29/0669 ,  H01L21/02603

摘要： Methods are disclosed for forming a multi-layer structure including highly controlled diffusion interfaces between alternating layers of different semiconductor materials. According to embodiments, during a deposition of semiconductor layers, the process is controlled to remain at low temperatures such that an inter-diffusion rate between the materials of the deposited layers is managed to provide diffusion interfaces with abrupt Si/SiGe interfaces. The highly controlled interfaces and first and second layers provide a multi-layer structure with improved etching selectivity. In an embodiment, a gate all-around (GAA) transistor is formed with horizontal nanowires (NWs) from the multi-layer structure with improved etching selectivity. In embodiments, horizontal NWs of a GAA transistor may be formed with substantially the same size diameters and silicon germanium (SiGe) NWs may be formed with “all-in-one” silicon (Si) caps.

公开(公告)号：US11664246B2

公开(公告)日：2023-05-30

申请号：US16652771

申请日：2019-12-03

申请人： Laser Systems & Solutions of Europe

发明人： Fulvio Mazzamuto

IPC分类号： H01L21/67 ,  H01L21/04 ,  H01L21/225

CPC分类号： H01L21/67115 ,  H01L21/041 ,  H01L21/0455 ,  H01L21/2253 ,  H01L21/2258

摘要： A method for thermally processing a substrate having a surface region and a buried region with a pulsed light beam, the substrate presenting an initial temperature-depth profile and the surface region presenting an initial surface temperature, including steps of: illuminating the surface region with a preliminary pulse so that it generates an amount of heat and reaches a predetermined preliminary surface temperature; and illuminating the surface region with a subsequent pulse after a time interval so that it reaches a predetermined subsequent surface temperature. The time interval is determined such that the surface region reaches a predetermined intermediate surface temperature greater than the initial surface temperature, such that during the time interval, the amount of heat is diffused within the substrate down to a predetermined depth so that the substrate presents a predetermined intermediate temperature-depth profile.

公开(公告)号：US09893176B2

公开(公告)日：2018-02-13

申请号：US15275184

申请日：2016-09-23

申请人： FAIRCHILD SEMICONDUCTOR CORPORATION

发明人： Andrei Konstantinov

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/04 ,  H01L29/10 ,  H01L29/167 ,  H01L29/808

CPC分类号： H01L29/7803 ,  H01L21/0455 ,  H01L21/046 ,  H01L21/0465 ,  H01L21/047 ,  H01L21/049 ,  H01L29/0611 ,  H01L29/0638 ,  H01L29/1037 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/8083

摘要： In a general aspect, an apparatus can include a silicon carbide (SiC) trench gate MOSFET with improved operation due, at least in part, to a reduced gate capacitance. In the SiC trench gate MOSFET, a thick gate oxide can be formed on a bottom surface of the gate trench and a built-in channel, having a vertical portion and a lateral portion, can be formed to electrically connect a vertical inversion-layer channel, such as in a channel stopper layer, to a vertical JFET channel region and a drift region.

公开(公告)号：US09881996B2

公开(公告)日：2018-01-30

申请号：US14831580

申请日：2015-08-20

申请人： Sumitomo Electric Industries, Ltd.

发明人： Toru Hiyoshi

IPC分类号： H01L21/76 ,  H01L29/06 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/66 ,  H01L29/872

CPC分类号： H01L29/0634 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02494 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/0455 ,  H01L21/0475 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/861 ,  H01L29/872

摘要： A method for manufacturing a silicon carbide semiconductor device includes the steps of preparing a silicon carbide substrate having a first main surface and a second main surface located on a side opposite to the first main surface, forming an epitaxial layer on the first main surface, the epitaxial layer having a first conductivity type and having a third main surface located on a side opposite to a side on which the silicon carbide substrate is located, forming a trench, which includes side walls intersecting with the third main surface and a bottom portion connected to the side walls, in the epitaxial layer, widening an opening of the trench, and forming an embedded region, which has a second conductivity type different from the first conductivity type, in the trench. The epitaxial layer adjacent to the embedded region and the embedded region constitute a superjunction structure.

公开(公告)号：US20170025307A1

公开(公告)日：2017-01-26

申请号：US15119304

申请日：2015-01-09

申请人： SUNEDISON SEMICONDUCTOR LIMITED

发明人： Michael J. Ries ,  Jeffrey Louis Libbert ,  Charles R. Lottes

IPC分类号： H01L21/762 ,  H01L23/00

CPC分类号： H01L21/76254 ,  H01L21/0455 ,  H01L21/2253 ,  H01L21/2258 ,  H01L21/265 ,  H01L24/83 ,  H01L2224/83054 ,  H01L2224/83085 ,  H01L2224/83236 ,  H01L2224/83893

摘要： Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure.

摘要翻译： 公开了制备层状半导体结构的方法。 所述方法可以包括通过退火离子注入的施主晶片来预处理离子注入的施主晶片，以使得一部分离子在晶片接合之前扩散。 供体结构可以结合到手柄结构并且在不将离子重新注入到供体结构内的情况下被切割。

公开(公告)号：US20160240655A1

公开(公告)日：2016-08-18

申请号：US15024171

申请日：2014-08-11

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Takeyoshi Masuda

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L21/3065 ,  H01L29/10 ,  H01L21/04 ,  H01L29/04 ,  H01L29/66

CPC分类号： H01L21/0445 ,  H01L21/02115 ,  H01L21/0405 ,  H01L21/045 ,  H01L21/0455 ,  H01L21/046 ,  H01L21/0465 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L21/31058 ,  H01L21/324 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7813

摘要： A method for manufacturing a SiC semiconductor device includes the steps of: forming an impurity region in a SiC layer; forming a first carbon layer on a surface of the SiC layer having the impurity region formed therein, by selectively removing silicon from the surface; forming a second carbon layer on the first carbon layer; and heating the SiC layer having the first carbon layer and the second carbon layer formed therein.

摘要翻译： 一种制造SiC半导体器件的方法包括以下步骤：在SiC层中形成杂质区; 通过从表面选择性去除硅，在其上形成有杂质区的SiC层的表面上形成第一碳层; 在所述第一碳层上形成第二碳层; 并加热其中形成有第一碳层和第二碳层的SiC层。

公开(公告)号：US20160211140A1

公开(公告)日：2016-07-21

申请号：US14997221

申请日：2016-01-15

申请人： Infineon Technologies AG

发明人： Jens Peter Konrath ,  Ronny Kern ,  Stefan Krivec ,  Ulrich Schmid ,  Laura Stoeber

IPC分类号： H01L21/285 ,  H01L21/265 ,  H01L29/47

CPC分类号： H01L21/28537 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/0455 ,  H01L21/0495 ,  H01L21/2236 ,  H01L21/2652 ,  H01L21/67115 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/365 ,  H01L29/401 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66143 ,  H01L29/66848 ,  H01L29/872

摘要： A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber.

摘要翻译： 一种用于处理半导体的方法包括用半导体的表面照射用于清洁表面的第一气体类型的离子和将第二气体类型的离子注入到半导体表面下方的区域中，用于在低于该半导体区域的区域内产生缺陷 表面。 照射和植入在相同的室内进行。

公开(公告)号：US20160163818A1

公开(公告)日：2016-06-09

申请号：US15001726

申请日：2016-01-20

申请人： KAZUMI CHIDA ,  DENSO CORPORATION

发明人： Yuichi TAKEUCHI ,  Kazumi CHIDA ,  Narumasa SOEJIMA ,  Yukihiko WATANABE

IPC分类号： H01L29/66 ,  H01L21/3065 ,  H01L21/04 ,  H01L21/02 ,  H01L29/16 ,  H01L29/423

CPC分类号： H01L29/66068 ,  H01L21/02529 ,  H01L21/0455 ,  H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.

公开(公告)号：US20160005606A1

公开(公告)日：2016-01-07

申请号：US14729491

申请日：2015-06-03

申请人： Fuji Electric Co., Ltd.

发明人： Haruo NAKAZAWA ,  Kenichi IGUCHI ,  Masaaki OGINO

IPC分类号： H01L21/228 ,  B05C13/00 ,  H01L21/04 ,  B05C3/02 ,  H01L21/268 ,  H01L21/283

CPC分类号： H01L21/0455 ,  H01L21/268 ,  H01L29/66712 ,  H01L29/7802

摘要： A method for introducing impurity into a semiconductor substrate includes bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and irradiating the primary surface of the semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of the semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate. The laser beam irradiation is performed such that the raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate.

摘要翻译： 将杂质引入半导体衬底的方法包括使含有杂质元素的化合物的溶液与半导体衬底的主表面接触; 以及通过所述溶液用激光束照射所述半导体衬底的所述主表面，以在由所述激光束照射的位置处升高所述半导体衬底的主表面的温度，以将所述杂质元素掺杂到所述半导体衬底中。 执行激光束照射，使得升高的温度不会恢复到室温，直到使规定剂量的杂质元素掺杂到半导体衬底中。

公开(公告)号：US09029872B2

公开(公告)日：2015-05-12

申请号：US14098409

申请日：2013-12-05

申请人： Hyundai Motor Company

发明人： Jong Seok Lee ,  Kyoung-Kook Hong ,  Dae Hwan Chun ,  Youngkyun Jung

IPC分类号： H01L21/00 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/04 ,  H01L29/417

CPC分类号： H01L29/1608 ,  H01L21/0455 ,  H01L29/0623 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7813

摘要： The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate.A semiconductor device according to the present inventive concept includes a p type pillar region disposed below the trench, spaced apart from the trench or a first p type pillar region and a second p type pillar region disposed below the trench and corresponding to two corners of the trench.

摘要翻译： 本发明构思是为了改善使用沟槽栅极的碳化硅MOSFET的击穿电压。 根据本发明构思的半导体器件包括设置在沟槽下方的与沟槽间隔开的p型柱状区域或设置在沟槽下方并对应于沟槽的两个角的第一p型柱状区域和第二p型支柱区域 。