公开(公告)号：US12040208B2

公开(公告)日：2024-07-16

申请号：US17540859

申请日：2021-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunghee Kim ,  Seungran Park ,  Youngki Jung ,  Chulgyu Jung

IPC: H01L21/68 ,  H01L23/00 ,  H01L25/16

CPC classification number: H01L21/68 ,  H01L24/95 ,  H01L25/167 ,  H01L24/80 ,  H01L24/83 ,  H01L2224/80085 ,  H01L2224/80136 ,  H01L2224/80203 ,  H01L2224/80805 ,  H01L2224/83085 ,  H01L2224/83136 ,  H01L2224/83201 ,  H01L2224/95085 ,  H01L2224/95101 ,  H01L2224/95136 ,  H01L2924/12041

Abstract: A guide apparatus configured to transfer light-emitting devices in a liquid onto a substrate is provided. The guide apparatus includes a base configured to support the substrate; and a guide member configured to couple with the base to be seated on a mounting surface of the substrate in a state in which the substrate is supported on a surface of the base, wherein the guide member includes guide holes configured to respectively guide the light-emitting devices in the liquid to be disposed on the mounting surface of the substrate.

公开(公告)号：US11955468B2

公开(公告)日：2024-04-09

申请号：US16932591

申请日：2020-07-17

Applicant: Samsung Display Co., Ltd.

Inventor： Yunku Jung ,  Sungwoon Kim ,  Changhee Lee ,  Jaekook Ha ,  Yunhyuk Ko ,  Jaehoon Kim ,  Minki Nam ,  Hyunmi Doh ,  Myoungjin Park ,  Jae Hong Park ,  Junwoo Park

IPC: H01L25/16 ,  H01L23/00 ,  H01L33/44

CPC classification number: H01L25/167 ,  H01L24/32 ,  H01L24/83 ,  H01L33/44 ,  H01L2224/32137 ,  H01L2224/80143 ,  H01L2224/83085 ,  H01L2224/83896 ,  H01L2924/12041

Abstract: Provided is a light emitting element according to embodiments which includes a body including a semiconductor layer and an active layer, and a ligand including a head portion bonded to a surface of the body, an end portion spaced apart from the body, and having a positive or a negative charge, and a chain portion connecting the head portion and the end portion.

公开(公告)号：US20180012873A1

公开(公告)日：2018-01-11

申请号：US15691976

申请日：2017-08-31

Applicant: eLux Inc.

Inventor： Jong-Jan Lee ,  Paul J. Schuele

IPC: H01L25/075 ,  H01L25/00 ,  G02F1/1335

CPC classification number: H01L25/0753 ,  G02F1/133603 ,  G09G3/006 ,  H01L24/24 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L24/95 ,  H01L25/50 ,  H01L33/0095 ,  H01L2224/04105 ,  H01L2224/24011 ,  H01L2224/24226 ,  H01L2224/32055 ,  H01L2224/73267 ,  H01L2224/82102 ,  H01L2224/82104 ,  H01L2224/8284 ,  H01L2224/83011 ,  H01L2224/83085 ,  H01L2224/83194 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/92224 ,  H01L2224/95085 ,  H01L2924/15151

Abstract: An emissive panel and associated assembly method are provided. The method provides an emissive substrate having an insulating layer with a top surface and a back surface, and a dielectric layer overlying the insulating layer patterned to form a plurality of wells. Each well has a bottom surface formed on the insulating layer top surface with a first electrical interface electrically connected to a first conductive pressure channel (CPC). The CPCs are each made up of a pressure via with sidewalls formed between the well bottom surface and the insulating layer back surface. A metal layer coats the sidewalls, and a medium flow passage formed interior to the metal layer. The method uses negative pressure through the CPCs to help capture emissive elements in a liquid flow deposition process.

公开(公告)号：US20170025307A1

公开(公告)日：2017-01-26

申请号：US15119304

申请日：2015-01-09

Applicant: SUNEDISON SEMICONDUCTOR LIMITED

Inventor： Michael J. Ries ,  Jeffrey Louis Libbert ,  Charles R. Lottes

IPC: H01L21/762 ,  H01L23/00

CPC classification number: H01L21/76254 ,  H01L21/0455 ,  H01L21/2253 ,  H01L21/2258 ,  H01L21/265 ,  H01L24/83 ,  H01L2224/83054 ,  H01L2224/83085 ,  H01L2224/83236 ,  H01L2224/83893

Abstract: Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure.

Abstract translation: 公开了制备层状半导体结构的方法。 所述方法可以包括通过退火离子注入的施主晶片来预处理离子注入的施主晶片，以使得一部分离子在晶片接合之前扩散。 供体结构可以结合到手柄结构并且在不将离子重新注入到供体结构内的情况下被切割。

公开(公告)号：US20170330855A1

公开(公告)日：2017-11-16

申请号：US15154338

申请日：2016-05-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hang Tung ,  Su-Chun Yang ,  Tung-Liang Shao ,  Chen-Hua Yu

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/83 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/94 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13101 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16145 ,  H01L2224/29078 ,  H01L2224/29186 ,  H01L2224/32145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/81193 ,  H01L2224/83054 ,  H01L2224/83085 ,  H01L2224/83203 ,  H01L2224/83359 ,  H01L2224/83894 ,  H01L2224/94 ,  H01L2224/95085 ,  H01L2225/06513 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01046 ,  H01L2924/01079

Abstract: A representative system and method for manufacturing stacked semiconductor devices includes disposing an aqueous alkaline solution between a first semiconductor device and a second semiconductor device prior to bonding. In a representative implementation, first and second semiconductor devices may be hybrid bonded to one another, where dielectric features of the first semiconductor device are bonded to dielectric features of the second semiconductor device, and metal features of the first semiconductor device are bonded to metal features of the second semiconductor device. Immersion bonds so formed demonstrate a substantially lower incidence of delamination associated with bond defects.

公开(公告)号：US20140224409A1

公开(公告)日：2014-08-14

申请号：US14163037

申请日：2014-01-24

Applicant: International Rectifier Corporation

Inventor： Henning M. Hauenstein

IPC: B32B37/10 ,  H01L21/64

CPC classification number: B32B37/10 ,  B22F3/15 ,  B22F2003/153 ,  H01L21/64 ,  H01L23/3735 ,  H01L23/5385 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/291 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32145 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/7511 ,  H01L2224/753 ,  H01L2224/75304 ,  H01L2224/75314 ,  H01L2224/7598 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83085 ,  H01L2224/83091 ,  H01L2224/83203 ,  H01L2224/83208 ,  H01L2224/83209 ,  H01L2224/8384 ,  H01L2224/97 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/05032 ,  H01L2924/05042 ,  H01L2924/01002 ,  H01L2924/0101 ,  H01L2924/01018 ,  H01L2924/01036 ,  H01L2924/01054 ,  H01L2924/01086 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2924/01007

Abstract: In an exemplary implementation, a system for producing an electrical module includes a pressure chamber configured to receive a first body, a second body, and a sinter material therebetween. The system further includes a pressure generator configured to apply non-mechanical pressure in the pressure chamber to form the electrical module by attaching the first body to the second body using the sinter material. The pressure chamber is configured to enclose the first body over the second body. Furthermore, the pressure chamber includes a bottom opening configured to receive at least the first body. The non-mechanical pressure can include gas pressure.

Abstract translation: 在示例性实施方案中，用于生产电气模块的系统包括压力室，其被配置为在其间容纳第一主体，第二主体和烧结材料。 该系统还包括压力发生器，该压力发生器被配置为在压力室中施加非机械压力，以通过使用烧结材料将第一主体附接到第二主体来形成电气模块。 压力室被配置为将第一主体封闭在第二主体上。 此外，压力室包括构造成容纳至少第一主体的底部开口。 非机械压力可以包括气体压力。