公开(公告)号：US20240145342A1

公开(公告)日：2024-05-02

申请号：US18152463

申请日：2023-01-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tung-Liang Shao ,  You-Rong Shaw ,  Yu-Sheng Huang ,  Chen-Hua Yu

IPC分类号： H01L23/473 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L23/473 ,  H01L21/4878 ,  H01L21/565 ,  H01L23/315 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0652 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/83359 ,  H01L2924/1632

摘要： In an embodiment, a package includes an encapsulant laterally surrounding a first integrated circuit device and a second integrated circuit device, wherein the first integrated circuit device includes a die and a heat dissipation structure over the die; a sealant disposed over the heat dissipation structure; an adhesive disposed over the second integrated circuit device; and a lid disposed over the sealant and the adhesive, wherein the lid includes a first cooling passage and a second cooling passage, the first cooling passage including an opening at a bottom of the lid and aligned to the heat dissipation structure, the second cooling passage including channels aligned to the second integrated circuit device and being distant from the bottom of the lid.

公开(公告)号：US20230245969A1

公开(公告)日：2023-08-03

申请号：US17938296

申请日：2022-10-05

申请人： Mitsubishi Electric Corporation

发明人： Masaya IMORI ,  Daisuke KAWABATA

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/49866 ,  H01L24/48 ,  H01L24/73 ,  H01L24/32 ,  H01L24/29 ,  H01L24/83 ,  H01L24/27 ,  H01L25/072 ,  H01L2924/35121 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/12032 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/10254 ,  H01L2224/8384 ,  H01L2224/2732 ,  H01L2224/83097 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/83359 ,  H01L2224/83345 ,  H01L2224/83385 ,  H01L2224/3207 ,  H01L2224/3201 ,  H01L2224/32245 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2224/48137

摘要： According to the present disclosure, a semiconductor apparatus comprises an insulating substrate. A porous material is directly bonded to the insulating substrate. And a semiconductor device is bonded to the porous material via a bonding material. The bonding material contains metal nanoparticles.

公开(公告)号：US11715721B2

公开(公告)日：2023-08-01

申请号：US17447294

申请日：2021-09-10

申请人： National Yang Ming Chiao Tung University

发明人： Chih Chen ,  Kai-Cheng Shie ,  Jing-Ye Juang

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L24/27 ,  H01L24/29 ,  H01L2224/27462 ,  H01L2224/29019 ,  H01L2224/29147 ,  H01L2224/83091 ,  H01L2224/83095 ,  H01L2224/83193 ,  H01L2224/83345 ,  H01L2224/83359 ,  H01L2224/83895

摘要： Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.

公开(公告)号：US20170233615A1

公开(公告)日：2017-08-17

申请号：US15518680

申请日：2016-01-20

申请人： SEKISUI CHEMICAL CO., LTD.

发明人： Mitsuru Tanikawa ,  Takashi Watanabe ,  Yusuke Fujita ,  Yoshito Fujita ,  Tasuku Yamada

IPC分类号： C09J9/02 ,  C09D11/101 ,  C09D11/107 ,  C09D133/14 ,  C09J5/04 ,  C09D11/52 ,  C09J133/14 ,  C09J133/10 ,  H01L23/00 ,  C09J5/06 ,  C09D11/30 ,  C09D133/10

CPC分类号： C09D133/14 ,  C08G59/4215 ,  C08G59/5033 ,  C08G59/686 ,  C08L33/08 ,  C09D11/101 ,  C09D11/107 ,  C09D11/30 ,  C09D11/52 ,  C09D133/10 ,  C09J4/06 ,  C09J5/04 ,  C09J5/06 ,  C09J9/02 ,  C09J133/10 ,  C09J133/14 ,  C09J163/00 ,  C09J171/12 ,  C09J201/02 ,  C09J2203/326 ,  C09J2205/114 ,  C09J2205/31 ,  C09J2433/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/52 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/2741 ,  H01L2224/2783 ,  H01L2224/27848 ,  H01L2224/29083 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83026 ,  H01L2224/8322 ,  H01L2224/83359 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83947 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399 ,  C08L33/04

摘要： Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

公开(公告)号：US20150228690A1

公开(公告)日：2015-08-13

申请号：US14691243

申请日：2015-04-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Shuang-Ji Tsai ,  Yueh-Chiou Lin

IPC分类号： H01L27/146 ,  H01L23/00

CPC分类号： H01L27/14636 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/11916 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/83359 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into the semiconductor substrate. A low-k dielectric layer is disposed underlying the semiconductor substrate. A first non-low-k dielectric layer is underlying the low-k dielectric layer. A metal pad is underlying the first non-low-k dielectric layer. A second non-low-k dielectric layer is underlying the metal pad. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate, the dielectric pad, and the low-k dielectric layer, wherein the opening lands on a top surface of the metal pad. A passivation layer includes a portion on a sidewall of the opening, wherein a portion of the passivation layer at a bottom of the opening is removed.

摘要翻译： 集成电路结构包括半导体衬底和从半导体衬底的底表面延伸到半导体衬底中的介质衬垫。 低k电介质层设置在半导体衬底下方。 第一个非低k电介质层位于低k电介质层的下面。 金属焊盘位于第一非低k电介质层的下面。 第二个非低k电介质层位于金属焊盘的下方。 开口从半导体衬底的顶表面向下延伸以穿透半导体衬底，电介质衬垫和低k电介质层，其中，开口焊接在金属衬垫的顶表面上。 钝化层包括在开口的侧壁上的部分，其中去除开口底部的钝化层的一部分。

公开(公告)号：US20080061418A1

公开(公告)日：2008-03-13

申请号：US11980452

申请日：2007-10-31

申请人： Paul Enquist ,  Gaius Fountain

发明人： Paul Enquist ,  Gaius Fountain

IPC分类号： H01L29/08 ,  H01L29/06

CPC分类号： H01L24/08 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/13 ,  H01L23/36 ,  H01L23/481 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/24 ,  H01L24/26 ,  H01L24/27 ,  H01L24/30 ,  H01L24/48 ,  H01L24/80 ,  H01L24/82 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/167 ,  H01L25/18 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/14634 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2223/6677 ,  H01L2224/0807 ,  H01L2224/08123 ,  H01L2224/1134 ,  H01L2224/16 ,  H01L2224/24011 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/3005 ,  H01L2224/30104 ,  H01L2224/305 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/80896 ,  H01L2224/81894 ,  H01L2224/8303 ,  H01L2224/83092 ,  H01L2224/83099 ,  H01L2224/8319 ,  H01L2224/83193 ,  H01L2224/83345 ,  H01L2224/83359 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2224/83896 ,  H01L2224/83912 ,  H01L2224/83948 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/05442 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10S148/012 ,  Y10S438/977 ,  H01L2224/13099 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

摘要： A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.

公开(公告)号：US06905557B2

公开(公告)日：2005-06-14

申请号：US10192702

申请日：2002-07-11

申请人： Paul M. Enquist

发明人： Paul M. Enquist

IPC分类号： H01L21/331 ,  H01L21/02 ,  H01L21/20 ,  H01L21/60 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/98 ,  H01L27/00 ,  H01L27/04 ,  H01L27/088 ,  H01L27/092 ,  H01L29/737 ,  H01L29/06

CPC分类号： H01L24/08 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/13 ,  H01L23/36 ,  H01L23/481 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/24 ,  H01L24/26 ,  H01L24/27 ,  H01L24/30 ,  H01L24/48 ,  H01L24/80 ,  H01L24/82 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/167 ,  H01L25/18 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/14634 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2223/6677 ,  H01L2224/0807 ,  H01L2224/08123 ,  H01L2224/1134 ,  H01L2224/16 ,  H01L2224/24011 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/3005 ,  H01L2224/30104 ,  H01L2224/305 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/80896 ,  H01L2224/81894 ,  H01L2224/8303 ,  H01L2224/83092 ,  H01L2224/83099 ,  H01L2224/8319 ,  H01L2224/83193 ,  H01L2224/83345 ,  H01L2224/83359 ,  H01L2224/8385 ,  H01L2224/83894 ,  H01L2224/83896 ,  H01L2224/83912 ,  H01L2224/83948 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/05442 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10S148/012 ,  Y10S438/977 ,  H01L2224/13099 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

摘要： A device integration method and integrated device. The method includes the steps of polishing surfaces of first and second workpieces each to a surface roughness of about 5-10 Å. The polished surfaces of the first and second workpieces are bonded together. A surface of a third workpiece is polished to the surface roughness. The surface of the third workpiece is bonded to the joined first and second workpieces. The first, second and third workpieces may each be a semiconductor device having a thin material formed on one surface, preferably in wafer form. The thin materials are polished to the desired surface roughness and then bonded together. The thin materials may each have a thickness of approximately 1-10 times the surface non-planarity of the material on which they are formed. Any number of devices may be bonded together, and the devices may be different types of devices or different technologies.

摘要翻译： 一种器件集成方法和集成器件。 该方法包括以下步骤：将第一和第二工件的表面各自抛光到大约5-10的表面粗糙度。 第一和第二工件的抛光表面粘合在一起。 将第三工件的表面抛光至表面粗糙度。 第三工件的表面被接合到接合的第一和第二工件上。 第一，第二和第三工件可以各自是具有在一个表面上形成的薄材料，优选以晶片形式形成的半导体器件。 将薄的材料抛光至所需的表面粗糙度，然后粘结在一起。 薄材料可以各自具有其形成它们的材料的表面非平面度的大约1-10倍的厚度。 任何数量的设备可以结合在一起，并且设备可以是不同类型的设备或不同的技术。

公开(公告)号：US20170330855A1

公开(公告)日：2017-11-16

申请号：US15154338

申请日：2016-05-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Hang Tung ,  Su-Chun Yang ,  Tung-Liang Shao ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L24/83 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/94 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13101 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16145 ,  H01L2224/29078 ,  H01L2224/29186 ,  H01L2224/32145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/81193 ,  H01L2224/83054 ,  H01L2224/83085 ,  H01L2224/83203 ,  H01L2224/83359 ,  H01L2224/83894 ,  H01L2224/94 ,  H01L2224/95085 ,  H01L2225/06513 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01046 ,  H01L2924/01079

摘要： A representative system and method for manufacturing stacked semiconductor devices includes disposing an aqueous alkaline solution between a first semiconductor device and a second semiconductor device prior to bonding. In a representative implementation, first and second semiconductor devices may be hybrid bonded to one another, where dielectric features of the first semiconductor device are bonded to dielectric features of the second semiconductor device, and metal features of the first semiconductor device are bonded to metal features of the second semiconductor device. Immersion bonds so formed demonstrate a substantially lower incidence of delamination associated with bond defects.

公开(公告)号：US20170271295A1

公开(公告)日：2017-09-21

申请号：US15514524

申请日：2015-09-17

申请人： OSRAM Oplo Semiconductors GmbH

发明人： Andreas Ploessl

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L23/15

CPC分类号： H01L24/29 ,  H01L23/15 ,  H01L23/49513 ,  H01L23/49866 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/15 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/40 ,  H01L33/62 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05678 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1141 ,  H01L2224/11436 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13347 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/2741 ,  H01L2224/27436 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29173 ,  H01L2224/29178 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81207 ,  H01L2224/81208 ,  H01L2224/81469 ,  H01L2224/81473 ,  H01L2224/81478 ,  H01L2224/8184 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83208 ,  H01L2224/83359 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/83469 ,  H01L2224/83473 ,  H01L2224/83478 ,  H01L2224/8384 ,  H01L2924/00015 ,  H01L2924/1033 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/13014 ,  H01L2924/13064 ,  H01L2924/15724 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2224/05639 ,  H01L2924/00012

摘要： An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.

公开(公告)号：US20170062380A1

公开(公告)日：2017-03-02

申请号：US15349511

申请日：2016-11-11

申请人： Emmett Howard ,  Nicholas Munizza ,  Paul Yee ,  Michael Marrs

发明人： Emmett Howard ,  Nicholas Munizza ,  Paul Yee ,  Michael Marrs

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L21/6835 ,  H01L24/29 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/8309 ,  H01L2224/83359

摘要： Some embodiments include a method. The method can comprise: providing a carrier substrate; providing an adhesion modification layer over the carrier substrate; providing a device substrate; and coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together. In these embodiments, the adhesion modification layer can be configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer. Other embodiments of related methods and devices are also disclosed.

摘要翻译： 一些实施例包括一种方法。 该方法可以包括：提供载体衬底; 在所述载体基底上提供粘附修饰层; 提供器件衬底; 以及将所述器件衬底和所述载体衬底耦合在一起时，当所述器件衬底和所述载体衬底耦合在一起时，所述粘附修饰层位于所述器件衬底和所述载体衬底之间。 在这些实施例中，粘合改性层可以被配置成使得器件衬底通过粘合改性层间接地与载体衬底相互耦合，第一接合力大于第二结合力，器件衬底与 载体基材不存在粘附改性层。 还公开了相关方法和装置的其它实施例。