公开(公告)号：US20230245969A1

公开(公告)日：2023-08-03

申请号：US17938296

申请日：2022-10-05

申请人： Mitsubishi Electric Corporation

发明人： Masaya IMORI ,  Daisuke KAWABATA

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/49866 ,  H01L24/48 ,  H01L24/73 ,  H01L24/32 ,  H01L24/29 ,  H01L24/83 ,  H01L24/27 ,  H01L25/072 ,  H01L2924/35121 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/12032 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/10254 ,  H01L2224/8384 ,  H01L2224/2732 ,  H01L2224/83097 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/83359 ,  H01L2224/83345 ,  H01L2224/83385 ,  H01L2224/3207 ,  H01L2224/3201 ,  H01L2224/32245 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2224/48137

摘要： According to the present disclosure, a semiconductor apparatus comprises an insulating substrate. A porous material is directly bonded to the insulating substrate. And a semiconductor device is bonded to the porous material via a bonding material. The bonding material contains metal nanoparticles.