公开(公告)号：USRE49987E1

公开(公告)日：2024-05-28

申请号：US17725442

申请日：2022-04-20

Applicant: Invensas LLC

Inventor： Cyprian Emeka Uzoh ,  Rajesh Katkar

IPC: H01L25/065 ,  B81B7/00 ,  B81C1/00 ,  H01L21/48 ,  H01L23/00 ,  H01L23/367 ,  H01L23/42 ,  H01L23/48 ,  H01L23/498 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/16 ,  H01L49/02

CPC classification number: H01L25/0657 ,  B81B7/0074 ,  B81C1/0023 ,  H01L21/4853 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/522 ,  H01L23/5383 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/24 ,  H01L24/49 ,  H01L24/73 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/16 ,  H01L25/50 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L24/02 ,  H01L24/17 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0239 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03614 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05547 ,  H01L2224/05565 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/05684 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11903 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/13184 ,  H01L2224/13565 ,  H01L2224/13616 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/14132 ,  H01L2224/14134 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/24147 ,  H01L2224/24227 ,  H01L2224/244 ,  H01L2224/32145 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48149 ,  H01L2224/4903 ,  H01L2224/73201 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81825 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/1205 ,  H01L2924/1206 ,  H01L2924/1207 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/3841 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/15787 ,  H01L2924/00 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/0239 ,  H01L2924/01029 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2224/05568 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/81825 ,  H01L2924/00014 ,  H01L2224/1147 ,  H01L2924/00014 ,  H01L2224/0347 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05111 ,  H01L2924/00014 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05169 ,  H01L2924/00014 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05184 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/0332 ,  H01L2924/00014 ,  H01L2224/03462 ,  H01L2924/00014 ,  H01L2224/03464 ,  H01L2924/00014 ,  H01L2224/11462 ,  H01L2924/00014 ,  H01L2224/11464 ,  H01L2924/00014 ,  H01L2224/0333 ,  H01L2924/00012 ,  H01L2224/13616 ,  H01L2924/00014 ,  H01L2224/05616 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/01074 ,  H01L2224/13184 ,  H01L2924/01028 ,  H01L2224/13124 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01082 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/00014 ,  H01L2224/13116 ,  H01L2924/00014 ,  H01L2224/13113 ,  H01L2924/00014 ,  H01L2224/13169 ,  H01L2924/00014 ,  H01L2224/73201 ,  H01L2224/05 ,  H01L2224/13 ,  H01L2224/94 ,  H01L2224/81 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/45147 ,  H01L2924/00 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/45147 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20751 ,  H01L2224/45015 ,  H01L2924/20752 ,  H01L2224/45015 ,  H01L2924/20753 ,  H01L2224/45015 ,  H01L2924/20754 ,  H01L2224/45015 ,  H01L2924/20755 ,  H01L2224/45015 ,  H01L2924/20756 ,  H01L2224/45015 ,  H01L2924/20757 ,  H01L2224/45015 ,  H01L2924/20758 ,  H01L2224/45015 ,  H01L2924/20759 ,  H01L2224/45015 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20751 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20753 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20754 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20756 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20757 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20758 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/20759 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2224/45099

Abstract: Apparatus(es) and method(s) relate generally to via arrays on a substrate. In one such apparatus, the substrate has a conductive layer. First plated conductors are in a first region extending from a surface of the conductive layer. Second plated conductors are in a second region extending from the surface of the conductive layer. The first plated conductors and the second plated conductors are external to the first substrate. The first region is disposed at least partially within the second region. The first plated conductors are of a first height. The second plated conductors are of a second height greater than the first height. A second substrate is coupled to first ends of the first plated conductors. The second substrate has at least one electronic component coupled thereto. A die is coupled to second ends of the second plated conductors. The die is located over the at least one electronic component.

公开(公告)号：US11817427B2

公开(公告)日：2023-11-14

申请号：US17545737

申请日：2021-12-08

Applicant: Longitude Licensing Limited

Inventor： Ryohei Kitada ,  Masahiro Yamaguchi

IPC: H01L21/768 ,  H01L21/683 ,  H01L25/065 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L23/522 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5226 ,  H01L24/13 ,  H01L24/14 ,  H01L25/50 ,  H01L21/6836 ,  H01L24/11 ,  H01L24/16 ,  H01L2221/6834 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/0502 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/11002 ,  H01L2224/1134 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2924/014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/1134 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/05572 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05027 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/014

Abstract: In the semiconductor device, a semiconductor substrate has first and second surfaces. A circuitry layer is formed over the first surface and a first insulating layer is further formed over the circuitry layer. A second insulating layer including a first insulating element is formed over the second surface. A third insulating layer including a second insulating element different from the first insulating element of the second insulating layer is formed over the second surface with an intervention of the second insulating layer therebetween. A penetration electrode penetrates through the semiconductor substrate, the circuitry layer, the first insulating layer, the second insulating layer and the third insulating layer.

公开(公告)号：US11676938B2

公开(公告)日：2023-06-13

申请号：US15582418

申请日：2017-04-28

Applicant: JCET Semiconductor (Shaoxing) Co., Ltd.

Inventor： Ming-Che Hsieh ,  Chien Chen Lee ,  Baw-Ching Perng

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/498 ,  H01L23/525 ,  H01L23/532 ,  H01L23/31 ,  H01L21/56 ,  H01L23/14

CPC classification number: H01L24/94 ,  H01L21/561 ,  H01L21/76879 ,  H01L23/3192 ,  H01L23/49894 ,  H01L23/525 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L23/145 ,  H01L23/3114 ,  H01L23/3171 ,  H01L2224/02331 ,  H01L2224/02377 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0392 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/0558 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05555 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/1132 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11318 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16111 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/8181 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/3512 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05111 ,  H01L2924/00014 ,  H01L2224/0345 ,  H01L2924/00014 ,  H01L2224/03452 ,  H01L2924/00014 ,  H01L2224/0346 ,  H01L2924/00014 ,  H01L2224/05571 ,  H01L2924/00012 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05666 ,  H01L2924/01074 ,  H01L2224/05666 ,  H01L2924/01029 ,  H01L2224/05666 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2224/05666 ,  H01L2924/013 ,  H01L2924/0001 ,  H01L2224/05681 ,  H01L2924/01007 ,  H01L2924/01029 ,  H01L2224/1132 ,  H01L2924/00014 ,  H01L2224/11334 ,  H01L2924/00014 ,  H01L2224/1145 ,  H01L2924/00014 ,  H01L2224/1146 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2224/13124 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2224/13113 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2224/11849 ,  H01L2924/00014 ,  H01L2224/11901 ,  H01L2224/11849 ,  H01L2224/05555 ,  H01L2924/00014 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2224/81424 ,  H01L2924/00014 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2224/81444 ,  H01L2924/00014 ,  H01L2224/81439 ,  H01L2924/00014 ,  H01L2224/81411 ,  H01L2924/00014 ,  H01L2224/13005 ,  H01L2924/207 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01074 ,  H01L2224/05186 ,  H01L2924/04941 ,  H01L2224/05186 ,  H01L2924/04953 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00011 ,  H01L2224/81805

Abstract: A semiconductor device has a semiconductor wafer and a first conductive layer formed over the semiconductor wafer as contact pads. A first insulating layer formed over the first conductive layer. A second conductive layer including an interconnect site is formed over the first conductive layer and first insulating layer. The second conductive layer is formed as a redistribution layer. A second insulating layer is formed over the second conductive layer. An opening is formed in the second insulating layer over the interconnect site. The opening extends to the first insulating layer in an area adjacent to the interconnect site. Alternatively, the opening extends partially through the second insulating layer in an area adjacent to the interconnect site. An interconnect structure is formed within the opening over the interconnect site and over a side surface of the second conductive layer. The semiconductor wafer is singulated into individual semiconductor die.

公开(公告)号：US20180315656A1

公开(公告)日：2018-11-01

申请号：US16019096

申请日：2018-06-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ying-Ju Chen ,  Hsien-Wei Chen

IPC: H01L21/78 ,  H01L21/56 ,  B23K26/40 ,  H01L23/00 ,  H01L23/31 ,  B23K103/00

CPC classification number: H01L21/78 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/04 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13184 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A semiconductor device includes a plurality of connectors and at least one insulating layer disposed over a semiconductor substrate. A molding layer extends around the plurality of connectors. A sidewall of the molding layer that is closest to a scribe line is offset from the scribe line.

公开(公告)号：US20180240726A1

公开(公告)日：2018-08-23

申请号：US15961839

申请日：2018-04-24

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Nathapong SUTHIWONGSUNTHORN ,  Antonio Jr. Bambalan DIMAANO ,  Rui HUANG ,  Hua Hong TAN ,  Kriangsak Sae LE ,  Beng Yeung HO ,  Nelson Agbisit DE VERA ,  Roel Adeva ROBLES ,  Wedanni Linsangan MICLA

IPC: H01L23/31 ,  H01L23/544 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L21/3105 ,  H01L23/00

CPC classification number: H01L23/3135 ,  H01L21/3105 ,  H01L21/561 ,  H01L21/566 ,  H01L21/568 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2224/0391 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/1815 ,  H01L2224/11 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a wafer having first and second major surfaces. The wafer is prepared with a plurality of dies and a plurality of external electrical contacts disposed on the first major surface of the wafer. The method includes processing the wafer. Processing the wafer includes separating the wafer into a plurality of individual dies. An individual die includes first and second major surfaces and first and second sidewalls, and the external electrical contacts are formed on the first major surface of the die. An encapsulant material is formed. The encapsulant material covers at least a portion of the first and second sidewalls of the die.

公开(公告)号：US20180068937A1

公开(公告)日：2018-03-08

申请号：US15807102

申请日：2017-11-08

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Pandi C. Marimuthu ,  Yaojian Lin ,  Kang Chen ,  Yu Gu ,  Won Kyoung Choi

IPC: H01L23/498 ,  H01L25/10 ,  H01L21/48 ,  H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L23/13 ,  H01L21/683 ,  H01L21/56 ,  H01L25/065 ,  H01L23/14

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/13 ,  H01L23/147 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49833 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/1703 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/24101 ,  H01L2224/24155 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/81 ,  H01L2224/81005 ,  H01L2224/81125 ,  H01L2224/81127 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81484 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/81986 ,  H01L2224/82 ,  H01L2224/82039 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2224/92 ,  H01L2224/95 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/207 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2224/45099

Abstract: A semiconductor device has a substrate. A plurality of conductive vias is formed through the substrate. A conductive layer is formed over the substrate. An insulating layer is formed over conductive layer. A portion of the substrate is removed to expose the conductive vias. A plurality of vertical interconnect structures is formed over the substrate. A first semiconductor die is disposed over the substrate. A height of the vertical interconnect structures is less than a height of the first semiconductor die. An encapsulant is deposited over the first semiconductor die and the vertical interconnect structures. A first portion of the encapsulant is removed from over the first semiconductor die while leaving a second portion of the encapsulant over the vertical interconnect structures. The second portion of the encapsulant is removed to expose the vertical interconnect structures. A second semiconductor die is disposed over the first semiconductor die.

公开(公告)号：US09905530B2

公开(公告)日：2018-02-27

申请号：US15449466

申请日：2017-03-03

Applicant: Kulicke and Soffa Industries, Inc.

Inventor： Robert N. Chylak ,  Dominick A. DeAngelis

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/10 ,  H01L25/065

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/75 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13624 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/75343 ,  H01L2224/75348 ,  H01L2224/75349 ,  H01L2224/75744 ,  H01L2224/75745 ,  H01L2224/759 ,  H01L2224/8112 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81207 ,  H01L2224/81409 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/818 ,  H01L2224/81801 ,  H01L2224/81895 ,  H01L2224/81906 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20301 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/8121 ,  H01L2924/00

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

公开(公告)号：US09881888B2

公开(公告)日：2018-01-30

申请号：US15083085

申请日：2016-03-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Meng-Tse Chen ,  Hsiu-Jen Lin ,  Chih-Wei Lin ,  Ming-Da Cheng ,  Chih-Hang Tung ,  Chung-Shi Liu

IPC: H01L21/44 ,  H01L23/00 ,  H01L25/10 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L24/06 ,  H01L21/56 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/0558 ,  H01L2224/05666 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/119 ,  H01L2224/11906 ,  H01L2224/13005 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/16058 ,  H01L2224/16238 ,  H01L2224/16501 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81895 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).

公开(公告)号：US20180019191A1

公开(公告)日：2018-01-18

申请号：US15715515

申请日：2017-09-26

Applicant: INVENSAS CORPORATION

Inventor： Cyprian Emeka UZOH ,  Rajesh Katkar

IPC: H01L23/498 ,  B23K1/00 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  B32B15/01 ,  B23K35/22 ,  B23K35/02 ,  H01L25/10 ,  H01L25/00 ,  H01L21/56 ,  B23K101/40

CPC classification number: H01L23/49811 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/0266 ,  B23K35/22 ,  B23K2101/40 ,  B32B15/01 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/73 ,  H01L24/742 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/98 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/03 ,  H01L2224/03001 ,  H01L2224/03009 ,  H01L2224/03318 ,  H01L2224/0332 ,  H01L2224/0333 ,  H01L2224/03334 ,  H01L2224/0348 ,  H01L2224/03848 ,  H01L2224/03849 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/0391 ,  H01L2224/04105 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05294 ,  H01L2224/05547 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/056 ,  H01L2224/05794 ,  H01L2224/05839 ,  H01L2224/05844 ,  H01L2224/05847 ,  H01L2224/05855 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/10145 ,  H01L2224/11001 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/1191 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1319 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13561 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/1403 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16148 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/2401 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24146 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/75253 ,  H01L2224/81 ,  H01L2224/81138 ,  H01L2224/81141 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8122 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/82105 ,  H01L2224/83 ,  H01L2224/8385 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841

Abstract: A solder connection may be surrounded by a solder locking layer (1210, 2210) and may be recessed in a hole (1230) in that layer. The recess may be obtained by evaporating a vaporizable portion (1250) of the solder connection. Other features are also provided.

公开(公告)号：US20180006008A1

公开(公告)日：2018-01-04

申请号：US15705646

申请日：2017-09-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Kang Chen

IPC: H01L25/00 ,  H01L23/00 ,  H01L23/552 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L25/10 ,  H01L21/56 ,  H01L21/66

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L21/568 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3192 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/5383 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/03 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/19 ,  H01L2224/24227 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83191 ,  H01L2224/92125 ,  H01L2224/92244 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/153 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/1533 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/81 ,  H01L2224/27 ,  H01L2224/82

Abstract: A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.