公开(公告)号：US12125769B2

公开(公告)日：2024-10-22

申请号：US17853953

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Jie Chen ,  Ming-Fa Chen ,  Sung-Feng Yeh

IPC分类号： H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L23/481 ,  H01L21/486 ,  H01L21/56 ,  H01L23/3114 ,  H01L23/3135

摘要： A package structure including a first semiconductor die, a first insulating encapsulation, a bonding enhancement film, a second semiconductor die and a second insulating encapsulation is provided. The first insulating encapsulation laterally encapsulates a first portion of the first semiconductor die. The bonding enhancement film is disposed on a top surface of the first insulating encapsulation and laterally encapsulates a second portion of the first semiconductor die, wherein a top surface of the bonding enhancement film is substantially leveled with a top surface of the semiconductor die. The second semiconductor die is disposed on and bonded to the first semiconductor die and the bonding enhancement film. The second insulating encapsulation laterally encapsulates the second semiconductor die.

公开(公告)号：US20240347447A1

公开(公告)日：2024-10-17

申请号：US18751362

申请日：2024-06-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jie Chen ,  Hsien-Wei Chen ,  Ming-Fa Chen

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L23/5227 ,  H01L23/3157 ,  H01L23/5226 ,  H01L24/05 ,  H01L25/0657

摘要： A method of forming a semiconductor package includes the following steps. A first die is provided, wherein the first die comprises a plurality of first conductive patterns. A plurality of second conductive patterns are formed over the first die, wherein the second conductive patterns are connected to the first conductive patterns to form a first coil and a second coil surrounding the first coil.

公开(公告)号：US12113036B2

公开(公告)日：2024-10-08

申请号：US18342752

申请日：2023-06-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Ming-Fa Chen ,  Sen-Bor Jan ,  Chih-Chia Hu

IPC分类号： H01L23/64 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC分类号： H01L23/645 ,  H01L21/76879 ,  H01L23/481 ,  H01L24/09

摘要： A semiconductor package includes a first die and a second die. The first die includes a first coil and a second coil of an inductor. The first coil and the second coil are located at different level heights. The first coil includes a first metallic material. The second coil includes a second metallic material. The first metallic material has a different composition from the second metallic material. The second die is bonded to the first die. The second die includes a third coil of the inductor. The inductor extends from the first die to the second die.

公开(公告)号：US12080702B2

公开(公告)日：2024-09-03

申请号：US17873073

申请日：2022-07-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Jie Chen ,  Ming-Fa Chen

IPC分类号： H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L25/50 ,  H01L21/56 ,  H01L24/06 ,  H01L24/80 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/06181 ,  H01L2224/80001

摘要： A method is provided. A bottom tier package structure is bonded to a support substrate through a first bonding structure, wherein the bottom tier package structure includes a first semiconductor die encapsulated by a first insulating encapsulation, and the first bonding structure includes stacked first dielectric layers and at least one stacked first conductive features penetrating through the stacked first dielectric layers. The support substrate is placed on a grounded stage such that the first semiconductor die is grounded through the at least one first stacked conductive features, the support substrate and the grounded stage. A second semiconductor die is bonded to the bottom tier package structure through a second bonding structure, wherein the second bonding structure includes stacked second dielectric layers and at least one stacked second conductive features penetrating through the stacked second dielectric layers. The second semiconductor die is encapsulated with a second insulating encapsulation.

公开(公告)号：US20240203947A1

公开(公告)日：2024-06-20

申请号：US18586549

申请日：2024-02-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Jie Chen ,  Ming-Fa Chen

IPC分类号： H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/528 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/528 ,  H01L24/05 ,  H01L24/08 ,  H01L24/19 ,  H01L24/24 ,  H01L24/89 ,  H01L25/50 ,  H01L28/60 ,  H01L2224/0557 ,  H01L2224/08146 ,  H01L2224/24145 ,  H01L2224/80001 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/06586 ,  H01L2924/19041

摘要： A package includes a first die, a second die, and an encapsulant. The first die includes a first capacitor. The second die includes a second capacitor. The second die is stacked on the first die. The first capacitor is spatially separated from the second capacitor. The first capacitor is electrically connected to the second capacitor. The encapsulant laterally encapsulates the second die.

公开(公告)号：US20240178133A1

公开(公告)日：2024-05-30

申请号：US18434757

申请日：2024-02-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  An-Jhih Su ,  Li-Hsien Huang

IPC分类号： H01L23/522 ,  H01L21/311 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065 ,  H01L25/10

CPC分类号： H01L23/5226 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L25/50 ,  H01L21/311 ,  H01L21/568 ,  H01L23/3128 ,  H01L25/0657 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/181

摘要： Device, package structure and method of forming the same are disclosed. The device includes a die encapsulated by an encapsulant, a conductive structure aside the die, and a dielectric layer overlying the conductive structure. The conductive structure includes a through via in the encapsulant, a redistribution line layer overlying the through via, and a seed layer overlying the redistribution line layer. The dielectric layer includes an opening, wherein the opening exposes a surface of the conductive structure, the opening has a scallop sidewall, and an included angle between a bottom surface of the dielectric layer and a sidewall of the opening is larger than about 60 degrees.

公开(公告)号：US20240088028A1

公开(公告)日：2024-03-14

申请号：US18518448

申请日：2023-11-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jie Chen ,  Hsien-Wei Chen ,  Ming-Fa Chen

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L23/5227 ,  H01L23/3157 ,  H01L23/5226 ,  H01L24/05 ,  H01L25/0657

摘要： A semiconductor package includes a die and a plurality of conductive patterns. The die includes a device. The conductive patterns are disposed over the device, wherein the conductive patterns are electrically connected to one another to form a first coil and a second coil surrounding the first coil.

公开(公告)号：US20240085619A1

公开(公告)日：2024-03-14

申请号：US18513611

申请日：2023-11-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Ming-Fa Chen

IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L23/31 ,  H01L23/538

CPC分类号： G02B6/12002 ,  G02B6/4295 ,  H01L23/31 ,  H01L23/5386

摘要： A structure adapted to optical coupled to an optical fiber includes a photoelectric integrated circuit die, an electric integrated circuit die, a waveguide die and an insulating encapsulant. The electric integrated circuit die is over and electrically connected to the photoelectric integrated circuit die. The waveguide die is over and optically coupled to the photoelectric integrated circuit die, wherein the waveguide die includes a plurality of semiconductor pillar portions extending from the optical fiber to the photoelectric integrated circuit die. The insulating encapsulant laterally encapsulates the electric integrated circuit die and the waveguide die.

公开(公告)号：US11929322B2

公开(公告)日：2024-03-12

申请号：US17871998

申请日：2022-07-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  An-Jhih Su ,  Li-Hsien Huang

IPC分类号： H01L23/522 ,  H01L23/00 ,  H01L25/00 ,  H01L25/10 ,  H01L21/311 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L23/5226 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L25/50 ,  H01L21/311 ,  H01L21/568 ,  H01L23/3128 ,  H01L25/0657 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/15311 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00

摘要： Device, package structure and method of forming the same are disclosed. The device includes a die encapsulated by an encapsulant, a conductive structure aside the die, and a dielectric layer overlying the conductive structure. The conductive structure includes a through via in the encapsulant, a redistribution line layer overlying the through via, and a seed layer overlying the redistribution line layer. The dielectric layer includes an opening, wherein the opening exposes a surface of the conductive structure, the opening has a scallop sidewall, and an included angle between a bottom surface of the dielectric layer and a sidewall of the opening is larger than about 60 degrees.

公开(公告)号：US20240047422A1

公开(公告)日：2024-02-08

申请号：US18491794

申请日：2023-10-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsien-Wei Chen ,  Ming-Fa Chen ,  Sung-Feng Yeh

IPC分类号： H01L25/065 ,  H01L21/56 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L23/48

CPC分类号： H01L25/0655 ,  H01L21/566 ,  H01L23/49816 ,  H01L23/3128 ,  H01L24/09 ,  H01L24/30 ,  H01L24/73 ,  H01L23/481 ,  H01L24/17 ,  H01L2224/02373 ,  H01L2224/0231

摘要： A package structure includes at least one semiconductor die, an insulating encapsulant, an isolation layer and a redistribution layer. The at least one first semiconductor die has a semiconductor substrate and a conductive post disposed on the semiconductor substrate. The insulating encapsulant is partially encapsulating the first semiconductor die, wherein the conductive post has a first portion surrounded by the insulating encapsulant and a second portion that protrudes out from the insulating encapsulant. The isolation layer is disposed on the insulating encapsulant and surrounding the second portion of the conductive post. The redistribution layer is disposed on the first semiconductor die and the isolation layer, wherein the redistribution layer is electrically connected to the conductive post of the first semiconductor die.