Semiconductor substrate structure and manufacturing method thereof

    公开(公告)号:US11948899B2

    公开(公告)日:2024-04-02

    申请号:US17979793

    申请日:2022-11-03

    申请人: Dyi-Chung Hu

    发明人: Dyi-Chung Hu

    IPC分类号: H01L23/00

    摘要: A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors includes a conductive cap. The second group of circuit structure includes multiple second wiring layers and multiple second conductive connectors. The first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided.