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    REDUCED PARASITIC CAPACITANCE IN BONDED STRUCTURES
    1.
    发明申请
    REDUCED PARASITIC CAPACITANCE IN BONDED STRUCTURES 有权

    公开(公告)号：US20230122531A1

    公开(公告)日：2023-04-20

    申请号：US18046717

    申请日：2022-10-14

    申请人： INVENSAS LLC

    发明人： Cyprian Emeka Uzoh

    IPC分类号： H01L23/00 ,  H01L23/522 ,  H01L49/02 ,  H01L25/065

    摘要： Bonded structures having conductive features and isolation features are disclosed. In one example, a bonded structure can include a first element including a first insulating layer and at least two first conductive features disposed in the first insulating layer. The bonded structure can also include a second element including a second insulating layer and at least two second conductive features disposed in the second insulating substrate. The first element can be directly bonded to the second element with the at least two first conductive features aligned with the at least two second conductive features. The bonded structure can also include an isolation feature in the second insulating layer and between the at least two second conductive features. The isolation feature can have a dielectric constant lower than a dielectric constant of the second insulating layer.