公开(公告)号：US20110273847A1

公开(公告)日：2011-11-10

申请号：US13099135

申请日：2011-05-02

Applicant: Hong-Sik Hwang ,  Ning-Cheng Lee

Inventor： Hong-Sik Hwang ,  Ning-Cheng Lee

IPC: H05K7/20 ,  H05K7/00

CPC classification number: C22C28/00 ,  B23K35/24 ,  H01L23/3733 ,  H01L23/3736 ,  H01L23/42 ,  H01L23/4275 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/16221 ,  H01L2224/16225 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29313 ,  H01L2224/32012 ,  H01L2224/32014 ,  H01L2224/81192 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/3651 ,  H01L2924/01048 ,  H01L2924/0108 ,  H01L2924/01083 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2224/29311 ,  H01L2924/00012 ,  H01L2224/05599

Abstract: Alloy compositions and techniques for reducing IMC thickness and oxidation of metals and alloys are disclosed. In one particular exemplary embodiment, the alloy compositions may be realized as a composition of alloy or mixture consisting essentially of from about 90% to about 99.999% by weight indium and from about 0.001% to about 10% by weight germanium and unavoidable impurities. In another particular exemplary embodiment, the alloy compositions may be realized as a composition of alloy consisting essentially of from about 90% to about 99.999% by weight gallium and from about 0.001% to about 10% by weight germanium and unavoidable impurities.

Abstract translation: 公开了用于降低金属和合金的IMC厚度和氧化的合金组成和技术。 在一个具体的示例性实施方案中，合金组合物可以实现为基本上由约90重量％至约99.999重量％的铟和约0.001重量％至约10重量％的锗和不可避免的杂质组成的合金或混合物。 在另一个具体的示例性实施方案中，合金组合物可以实现为基本上由约90重量％至约99.999重量％的镓和约0.001重量％至约10重量％的锗和不可避免的杂质组成的合金。

公开(公告)号：US20240203754A1

公开(公告)日：2024-06-20

申请号：US18527731

申请日：2023-12-04

Applicant: Arieca Inc.

Inventor： Navid Kazem ,  Dylan S. Shah ,  Jeffrey Gelorme ,  Hing Jii Mea ,  Keyton D. Feller

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/373

CPC classification number: H01L21/4882 ,  H01L23/3733 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29005 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29301 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/2936 ,  H01L2224/29366 ,  H01L2224/29372 ,  H01L2224/29379 ,  H01L2224/29387 ,  H01L2224/29388 ,  H01L2224/2939 ,  H01L2224/3201 ,  H01L2224/32221 ,  H01L2224/83201 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2924/0108 ,  H01L2924/0133 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/0675 ,  H01L2924/0695 ,  H01L2924/07001 ,  H01L2924/0715 ,  H01L2924/095

Abstract: A method of deposition of a thermal interface material onto a circuit assembly and an integrated circuit formed therefrom is provided. The method includes depositing a thermal interface material at a first layer thickness between a first layer of a circuit assembly and a second layer of the circuit assembly. The thermal interface material includes an emulsion of liquid metal droplets and polymer. The first layer thickness is at least 1.1 times a D90 of the liquid metal droplets prior to compressing the circuit assembly. The method includes compressing the circuit assembly to decrease the first layer thickness to a second layer thickness, thereby deforming the liquid metal droplets. The second layer thickness is no greater than a D90 of the liquid metal droplets in thermal interface material prior to compressing the circuit assembly.

公开(公告)号：US11862611B2

公开(公告)日：2024-01-02

申请号：US17545667

申请日：2021-12-08

Applicant: Micron Technology, Inc.

Inventor： Ed A. Schrock

IPC: H01L25/065 ,  H01L23/367 ,  H01L23/31 ,  H01L23/053 ,  H01L21/56 ,  H01L21/48 ,  H01L23/10 ,  H01L23/24 ,  H01L23/433 ,  H01L23/08 ,  H01L23/373 ,  H01L25/18 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/4803 ,  H01L21/4817 ,  H01L21/563 ,  H01L21/565 ,  H01L23/053 ,  H01L23/08 ,  H01L23/10 ,  H01L23/24 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/3736 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/18 ,  H01L2224/1329 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29393 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1616 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/173 ,  H01L2924/1715 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2224/13111 ,  H01L2924/01047 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2224/1329 ,  H01L2924/0665 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2224/2929 ,  H01L2924/0715

Abstract: Several embodiments of the present technology are described with reference to a semiconductor apparatus. In some embodiments of the present technology, a semiconductor apparatus includes a stack of semiconductor dies attached to a thermal transfer structure. The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls to support the thermal transfer structure.

公开(公告)号：US09583688B2

公开(公告)日：2017-02-28

申请号：US15015246

申请日：2016-02-04

Applicant: NICHIA CORPORATION

Inventor： Ryohei Yamashita ,  Ryoichi Yoshimoto

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/48 ,  H01L23/495 ,  H01L23/00 ,  H01L33/52

CPC classification number: H01L33/62 ,  H01L23/495 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L33/483 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29364 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45184 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/0715 ,  H01L2924/07025 ,  H01L2924/095 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/20752

Abstract: A light emitting device mount includes a positive lead terminal, a negative lead terminal, and a resin portion. Each of the positive and negative lead terminal includes a first main surface, a second main surface, and an end surface. The end surface is provided between the first main surface and the second main surface. The end surface includes a first recessed surface area and a second recessed surface area. The first recessed surface area is extending from a first point of the first main surface in cross section. The second recessed surface area is extending from a second point of the second main surface in cross section. The first and second recessed surface areas define a protruding portion protruding outwardly. The resin portion is positioned at least between the end surface of the positive lead terminal and the end surface of the negative lead terminal.

Abstract translation: 发光装置支架包括正引线端子，负引线端子和树脂部分。 正极和负极引线端子中的每一个包括第一主表面，第二主表面和端表面。 端面设置在第一主表面和第二主表面之间。 端面包括第一凹陷表面区域和第二凹入表面区域。 第一凹陷表面区域从第一主表面的第一点在横截面上延伸。 第二凹入表面区域从第二主表面的第二点以横截面延伸。 第一和第二凹入表面区域限定向外突出的突出部分。 树脂部分至少位于正引线端子的端面和负引线端子的端面之间。

公开(公告)号：US20170125655A1

公开(公告)日：2017-05-04

申请号：US15404207

申请日：2017-01-12

Applicant: NICHIA CORPORATION

Inventor： Ryohei YAMASHITA ,  Ryoichi YOSHIMOTO

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L23/495 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L33/483 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29364 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45184 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/0715 ,  H01L2924/07025 ,  H01L2924/095 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/20752

Abstract: A light emitting device mount includes a positive lead terminal, and a negative lead terminal. Each of the positive and negative lead terminal includes a first main surface, a second main surface, and an end surface. The end surface is provided between the first main surface and the second main surface. The end surface includes a first recessed surface area and a second recessed surface area. The first recessed surface area is extending from a first point of the first main surface in cross section. The second recessed surface area is extending from a second point of the second main surface in cross section. The first and second recessed surface areas define a protruding portion protruding outwardly.

公开(公告)号：US20160368103A1

公开(公告)日：2016-12-22

申请号：US15109115

申请日：2014-01-16

Applicant: Ormet Circuitd, Inc.

Inventor： Catherine A Shearer

IPC: B23K35/26 ,  B23K35/362 ,  B23K35/36 ,  B23K35/02 ,  B23K35/30

CPC classification number: B23K35/262 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K35/264 ,  B23K35/266 ,  B23K35/268 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/3026 ,  B23K35/3033 ,  B23K35/3612 ,  B23K35/362 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/27312 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/2741 ,  H01L2224/27418 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29301 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29314 ,  H01L2224/29316 ,  H01L2224/29317 ,  H01L2224/29318 ,  H01L2224/2932 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29349 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29373 ,  H01L2224/2938 ,  H01L2224/29384 ,  H01L2224/29386 ,  H01L2224/29411 ,  H01L2224/29424 ,  H01L2224/29438 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29447 ,  H01L2224/29449 ,  H01L2224/29455 ,  H01L2224/29457 ,  H01L2224/2946 ,  H01L2224/29464 ,  H01L2224/29469 ,  H01L2224/29473 ,  H01L2224/2948 ,  H01L2224/29484 ,  H01L2224/29486 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/325 ,  H01L2224/83075 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/8321 ,  H01L2224/83439 ,  H01L2224/83825 ,  H01L2224/8384 ,  H05K3/3463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01052 ,  H01L2924/0108 ,  H01L2924/01034 ,  H01L2924/01084 ,  H01L2924/01048 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/00012

Abstract: Invention compositions are a replacement for high melting temperature solder pastes and preforms in high operating temperature and step-soldering applications. In the use of the invention, a mixture of metallic powders reacts below 350 degrees C. to form a dense metallic joint that does not remelt at the original process temperature.

Abstract translation: 本发明组合物是在高工作温度和步骤焊接应用中替代高熔点温度的焊膏和预制件。 在本发明的使用中，金属粉末的混合物在350摄氏度以下反应，形成不会在原始工艺温度下重熔的致密金属接头。

公开(公告)号：US20140264426A1

公开(公告)日：2014-09-18

申请号：US14211051

申请日：2014-03-14

Applicant: NICHIA CORPORATION

Inventor： Ryohei YAMASHITA ,  Ryoichi YOSHIMOTO

IPC: H01L23/495 ,  H01L33/48

CPC classification number: H01L33/62 ,  H01L23/495 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L33/483 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29364 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45184 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/0715 ,  H01L2924/07025 ,  H01L2924/095 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/20752

Abstract: A mount includes a terminal, and a resin portion. The terminal includes a first surface, a second surface, and an end surface having first and second recessed areas that are extend from the first and second surfaces, respectively. The resin portion is integrally formed with the terminal, and at least partially covers the end surface so that the first and second surfaces are at least partially exposed. The resin portion forms a recessed part to accommodate the light emitting device. The second recessed area includes a closest point that is positioned closest to the first surface, and an extension part that extends outward of the closest point and toward the second surface side. The extension part is formed at least on opposing end surfaces of the pair of positive and negative lead terminal. The first recessed area is arranged on the exterior side relative to the closest point.

Abstract translation: 安装件包括端子和树脂部分。 端子包括第一表面，第二表面和端面，其具有分别从第一表面和第二表面延伸的第一和第二凹陷区域。 树脂部分与端子一体地形成，并且至少部分地覆盖端面，使得第一和第二表面至少部分地露出。 树脂部分形成凹部以容纳发光器件。 第二凹陷区域包括最接近第一表面的最近点，以及从最近点向外延伸并朝向第二表面侧的延伸部分。 延伸部分至少形成在一对正和负引线端子的相对的端面上。 第一凹陷区域相对于最靠近的点布置在外侧。

公开(公告)号：US20130154095A1

公开(公告)日：2013-06-20

申请号：US13720051

申请日：2012-12-19

Applicant: Arum YU ,  Nam Ju KIM ,  Kyoung Soo PARK ,  Young Woo PARK ,  Joon Mo SEO ,  Motohide TAKEICHI ,  Dong Seon UH ,  Hyun Min CHOI

Inventor： Arum YU ,  Nam Ju KIM ,  Kyoung Soo PARK ,  Young Woo PARK ,  Joon Mo SEO ,  Motohide TAKEICHI ,  Dong Seon UH ,  Hyun Min CHOI

IPC: H01L23/00

CPC classification number: H01L24/29 ,  H01L24/13 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/29082 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/29398 ,  H01L2224/29401 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29447 ,  H01L2224/29455 ,  H01L2224/29464 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/83101 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2924/07802 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/15788 ,  H01L2924/20106 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014

Abstract: A semiconductor device includes an anisotropic conductive film for connecting the semiconductor device. The anisotropic conductive film includes a first conductive layer that has first conductive particles. The first conductive particles include cores containing silica or a silica composite, and have a 20% K-value ranging from about 7,000 N/mm2 to about 12,000 N/mm2.

Abstract translation: 半导体器件包括用于连接半导体器件的各向异性导电膜。 各向异性导电膜包括具有第一导电颗粒的第一导电层。 第一导电颗粒包括含有二氧化硅或二氧化硅复合材料的芯，并且具有约7,000N / mm 2至约12,000N / mm 2的20％K值。

公开(公告)号：US20190027667A1

公开(公告)日：2019-01-24

申请号：US16143383

申请日：2018-09-26

Applicant: NICHIA CORPORATION

Inventor： Ryohei YAMASHITA ,  Ryoichi YOSHIMOTO

IPC: H01L33/62 ,  H01L23/495 ,  H01L23/00 ,  H01L33/48 ,  H01L33/52 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L23/495 ,  H01L23/49517 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L33/483 ,  H01L33/486 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29364 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45184 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45673 ,  H01L2224/4568 ,  H01L2224/45684 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/095 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/20752 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/0715 ,  H01L2924/07025 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A light emitting apparatus includes a positive lead terminal and a negative lead terminal, each of which includes a first main surface, a second main surface, and an end surface including a first recessed surface area extending from a first point of the first main surface in cross section, and a second recessed surface area extending from a second point of the second main surface in cross section. A distance between a first part of the end surface of the positive lead terminal and a second part of the end surface of the negative lead terminal than a first distance between the first points of the positive lead terminal and the negative lead terminal and a second distance between the second points of the positive lead terminal and the negative lead terminal. The first part and the second part are separated from the first point and the second point.

公开(公告)号：US09583453B2

公开(公告)日：2017-02-28

申请号：US13906317

申请日：2013-05-30

Applicant: Ormet Circuits, Inc.

Inventor： Catherine Shearer ,  Michael C Matthews ,  Peter A Matturi ,  Eunsook Barber ,  Richard Weaver

IPC: H01L23/00 ,  H01L21/683

CPC classification number: H01L24/27 ,  H01L21/6836 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05663 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/06181 ,  H01L2224/27003 ,  H01L2224/2731 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27438 ,  H01L2224/278 ,  H01L2224/27848 ,  H01L2224/2929 ,  H01L2224/29301 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29314 ,  H01L2224/29316 ,  H01L2224/29317 ,  H01L2224/29318 ,  H01L2224/2932 ,  H01L2224/29324 ,  H01L2224/29338 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29349 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29373 ,  H01L2224/2938 ,  H01L2224/2939 ,  H01L2224/2949 ,  H01L2224/29499 ,  H01L2224/30181 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83447 ,  H01L2224/83825 ,  H01L2224/8384 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01004 ,  H01L2924/01048 ,  H01L2924/01052 ,  H01L2924/0108 ,  H01L2924/01034 ,  H01L2924/01084 ,  H01L2924/01076 ,  H01L2224/27 ,  H01L21/78 ,  H01L2224/83 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2224/27436 ,  H01L2221/68381

Abstract: Sintering die-attach materials provide a lead-free solution for semiconductor packages with superior electrical, thermal and mechanical performance to prior art alternatives. Wafer-applied sintering materials form a metallurgical bond to both semiconductor die and adherends as well as throughout the die-attach joint and do not remelt at the original process temperature. Application to either one or both sides of the wafer, as well as paste a film application are disclosed.

Abstract translation: 烧结芯片附着材料为现有技术的替代品提供了具有出色的电，热和机械性能的半导体封装的无铅解决方案。 晶片施加的烧结材料在半导体裸片和被粘物以及整个芯片附着接头处形成冶金结合，并且不会在原始工艺温度下重熔。 公开了应用于晶片的一侧或两侧以及粘贴薄膜应用。