Abstract:
A method of interconnecting components of a semiconductor device using wire bonding is presented. The method includes creating a free air ball at a first end of an aluminum wire that has a coating surrounding the aluminum wire, wherein the coating comprises palladium, and wherein the free air ball is substantially free of the coating. The method further includes the step of bonding the free air ball to a bond pad on a semiconductor chip, the bond pad having an aluminum surface layer, wherein the resultant ball bond and the bond pad form a substantially homogenous, aluminum-to-aluminum bond. The method may further include bonding a second, opposing end of the coated-aluminum wire to a bond site separate from the semiconductor chip, the bond site having a palladium surface layer, wherein the second end of the coated-aluminum wire and the bond site form a substantially homogenous, palladium-to-palladium bond.
Abstract:
A light emitting apparatus includes a positive lead terminal and a negative lead terminal, each of which includes a first main surface, a second main surface, and an end surface including a first recessed surface area extending from a first point of the first main surface in cross section, and a second recessed surface area extending from a second point of the second main surface in cross section. A distance between a first part of the end surface of the positive lead terminal and a second part of the end surface of the negative lead terminal than a first distance between the first points of the positive lead terminal and the negative lead terminal and a second distance between the second points of the positive lead terminal and the negative lead terminal. The first part and the second part are separated from the first point and the second point.
Abstract:
A light emitting device mount includes a positive lead terminal, a negative lead terminal, and a resin portion. Each of the positive and negative lead terminal includes a first main surface, a second main surface, and an end surface. The end surface is provided between the first main surface and the second main surface. The end surface includes a first recessed surface area and a second recessed surface area. The first recessed surface area is extending from a first point of the first main surface in cross section. The second recessed surface area is extending from a second point of the second main surface in cross section. The first and second recessed surface areas define a protruding portion protruding outwardly. The resin portion is positioned at least between the end surface of the positive lead terminal and the end surface of the negative lead terminal.
Abstract:
In a power semiconductor module, a copper-containing first soldering partner, a connection layer, and a copper-containing second soldering partner are arranged successively and fixedly connected with one another. The connection layer has a portion of intermetallic copper-tin phases of at least 90% by weight. For producing such a power semiconductor module the soldering partners and the solder arranged there between are pressed against one another with a predefined pressure and the solder is melted. After termination of a predefined period of time the diffused copper and the tin from the liquid solder form a connection layer comprising intermetallic copper-tin phases, the portion of which is at least 90% by weight of the connection layer created from the solder layer.
Abstract:
A copper-based alloy wire made of a material selected from the group consisting of a copper-gold alloy, a copper-palladium alloy and a copper-gold-palladium alloy is provided. The alloy wire has a polycrystalline structure of a face-centered cubic lattice and consists of a plurality of equi-axial grains. The quantity of grains having annealing twins is 10 percent or more of the total quantity of the grains of the copper-based alloy wire.
Abstract:
A wire structure, which may be configured for a semiconductor device, is disclosed. The wire may include an elongate flexible core formed of a conductor material and a cladding layer covering an outer surface of the core. The cladding layer may be a conductor. In various aspects the cladding layer and core have a different grain sizes. An average grain size of the core material may several orders of magnitude greater than an average grain size of the cladding layer material. The cladding layer may be an alloy having a varying concentration of a minor component across its thickness. Methods of forming a wire structure are also disclosed.
Abstract:
A flexible conductive ribbon is ultrasonically bonded to the surface of a die and terminals from a lead frame of a package. Multiple ribbons and/or multiple bonded areas provide various benefits, such as high current capability, reduced spreading resistance, reliable bonds due to large contact areas, lower cost and higher throughput due to less areas to bond and test.
Abstract:
A connecting wire having an electrically conductive core, preferably provided by a wire or ribbon, with a coating provided on the surface of the core. The coating is composed of a nitrogen-containing tantalum alloy or tungsten alloy, and also optionally contains silicon as an additional alloy component. A manufacturing method for producing such a connecting wire involves passing a wire or ribbon core past a coating source to apply the coating.
Abstract:
A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad.
Abstract:
A semiconductor device with a chip having at least one metallic bond pad (101) over weak insulating material (102). In contact with this bond pad is a flattened metal ball (104) made of at least 99.999% pure metal such as gold, copper, or silver. The diameter (104a) of the flattened ball is less than or equal to the diameter (103a) of the bond pad. A wire (110) is connected to the bond pad so that the wire has a thickened portion (111) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.