公开(公告)号：US09331049B2

公开(公告)日：2016-05-03

申请号：US12866797

申请日：2009-07-10

Applicant: Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

Inventor： Tomohiro Uno ,  Takashi Yamada ,  Atsuo Ikeda

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45673 ,  H01L2224/45676 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48471 ,  H01L2224/48475 ,  H01L2224/48486 ,  H01L2224/48499 ,  H01L2224/48507 ,  H01L2224/48511 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85986 ,  H01L2225/06562 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  Y10T428/12222 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00015 ,  H01L2924/01001 ,  H01L2924/01203 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/20645 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/01049

Abstract: The invention is aimed at providing a bonding structure of a copper-based bonding wire, realizing low material cost, high productivity in a continuous bonding in reverse bonding for wedge bonding on bumps, as well as excellent reliability in high-temperature heating, thermal cycle test, reflow test, HAST test or the like. The bonding structure is for connecting the bonding wire onto a ball bump formed on an electrode of a semiconductor device, the bonding wire and the ball bump respectively containing copper as a major component thereof. The bonding structure comprises a concentrated layer A provided at an interface of a bonding part of the ball bump and the bonding wire, wherein the concentration of a metal R other than copper in the concentrated layer A is not less than ten times the average concentration of the metal R in the ball bump; and a concentrated layer B provided at an interface of a bonding part of the ball bump and the electrode, wherein the concentration of the metal R in the concentrated layer B is not less than ten times the average concentration of the metal R in the ball bump.

Abstract translation: 本发明的目的在于提供铜基接合线的接合结构，实现低材料成本，在反向接合中的连续接合中的高生产率，用于凸块上的楔形接合，以及在高温加热，热循环中具有优异的可靠性 测试，回流测试，HAST测试等。 接合结构用于将接合线连接到形成在半导体器件的电极上的球凸点，接合线和分别包含铜作为其主要成分的球凸块。 接合结构包括设置在球凸块的接合部分和接合线的界面处的浓缩层A，其中浓缩层A中的铜以外的金属R的浓度不小于铜的平均浓度的十倍 球碰撞中的金属R; 以及集中层B，设置在所述球凸块的接合部的界面和所述电极之间，所述浓缩层B中的所述金属R的浓度不小于所述球凸块中的金属R的平均浓度的十倍 。

公开(公告)号：US20130213689A1

公开(公告)日：2013-08-22

申请号：US13811419

申请日：2011-07-18

Applicant: Poh Yoong Kong

Inventor： Eugen Milke ,  Jürgen Dick ,  Peter Prenosil ,  Frank-Werner Wulff

IPC: H01B5/02 ,  B21F45/00

CPC classification number: H01B5/02 ,  B21F45/00 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/4321 ,  H01L2224/4381 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43847 ,  H01L2224/43848 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45016 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45686 ,  H01L2224/45687 ,  H01L2224/85001 ,  H01L2224/85207 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2224/45164 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01083 ,  H01L2924/01049

Abstract: A bonding wire is provided containing a wire core made of a first material containing a metal and a wire jacket that envelopes the wire core and is made of a second material containing a metal. The wire core and the wire jacket are made of different metals and the bonding wire has an aspect ratio of no more than 0.8. The bonding wire efficiently prevents damage to bonding surfaces during the bonding process and short-circuiting during the use of corresponding sub-assemblies.

Abstract translation: 提供了一种接合线，其包含由包含金属的第一材料制成的线芯和包围线芯的线夹套，并且由包含金属的第二材料制成。 线芯和电线护套由不同的金属制成，接合线的纵横比不大于0.8。 接合线在使用相应的子组件期间有效地防止在接合过程中的接合表面的损坏和短路。

公开(公告)号：US08450611B2

公开(公告)日：2013-05-28

申请号：US12607225

申请日：2009-10-28

Applicant: Rainer Dohle ,  Frank Rudolf ,  Christian Wenzel

Inventor： Rainer Dohle ,  Frank Rudolf ,  Christian Wenzel

IPC: H01R4/62

CPC classification number: H01L24/85 ,  B23K35/0227 ,  B23K35/286 ,  B32B15/01 ,  B32B15/018 ,  C22C27/02 ,  C22C27/04 ,  C23C14/3407 ,  C23C14/562 ,  C23C30/00 ,  H01L24/43 ,  H01L24/45 ,  H01L24/745 ,  H01L2224/435 ,  H01L2224/4381 ,  H01L2224/4382 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43831 ,  H01L2224/43848 ,  H01L2224/45012 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45016 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4557 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/456 ,  H01L2224/45624 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45681 ,  H01L2224/45684 ,  H01L2224/45686 ,  H01L2224/45687 ,  H01L2224/745 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2224/45138 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/05432 ,  H01L2924/013

Abstract: A connecting wire having an electrically conductive core, preferably provided by a wire or ribbon, with a coating provided on the surface of the core. The coating is composed of a nitrogen-containing tantalum alloy or tungsten alloy, and also optionally contains silicon as an additional alloy component. A manufacturing method for producing such a connecting wire involves passing a wire or ribbon core past a coating source to apply the coating.

Abstract translation: 一种连接线，其具有导电芯，优选地由线或带提供，其具有设置在芯的表面上的涂层。 该涂层由含氮钽合金或钨合金组成，并且还任选地含有作为附加合金成分的硅。 用于制造这种连接线​​的制造方法包括使线或带芯通过涂覆源以施加涂层。

公开(公告)号：US08247911B2

公开(公告)日：2012-08-21

申请号：US12445789

申请日：2008-01-15

Applicant: Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

Inventor： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

IPC: H01L23/488 ,  H01L21/60

CPC classification number: H01L24/78 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43821 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01001 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Abstract translation: 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度 ，具有较高的工业生产率。 主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。 浓缩层形成在球接合部分附近或其界面处。 导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍 导电金属在浓缩层以外的球接合部分的浓度。

公开(公告)号：US20040188833A1

公开(公告)日：2004-09-30

申请号：US10355593

申请日：2003-01-31

Inventor： Shigeyoshi Yoshida ,  Hiroshi Ono ,  Koji Kamei

IPC: H01L023/34

CPC classification number: H05K1/0233 ,  H01L23/4952 ,  H01L23/66 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/745 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/131 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/451 ,  H01L2224/45117 ,  H01L2224/45118 ,  H01L2224/45123 ,  H01L2224/45124 ,  H01L2224/45138 ,  H01L2224/45155 ,  H01L2224/45157 ,  H01L2224/4516 ,  H01L2224/45163 ,  H01L2224/45166 ,  H01L2224/45179 ,  H01L2224/45181 ,  H01L2224/45188 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45617 ,  H01L2224/45618 ,  H01L2224/45623 ,  H01L2224/45624 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/4566 ,  H01L2224/45663 ,  H01L2224/45666 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/45693 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/745 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H2001/0092 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01008 ,  H01L2924/01009 ,  H01L2924/049 ,  H01L2924/053 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In order to provide an electronic component of a high frequency current suppression type, which can completely suppress a high frequency current to prevent an electromagnetic interference from occurring even when it is used at a high frequency, and a bonding wire for the same, the semiconductor integrated circuit device (IC) (17) operates at a high speed in using at a high frequency band, and a predetermined number of terminals (19) are provided with a high frequency current suppressor (21) for attenuating a high frequency current passing through the terminals themselves. This high frequency current suppressor (21) is a thin film magnetic substance having a range from 0.3 to 20 (nullm) in thickness, and is disposed on the entire surface of each terminal (19), covering a mounting portion to be mounted on a printed wiring circuit board (23) for mounting IC (17) and an edge including a connecting portion to a conductive pattern (25) disposed on the printed wiring circuit board (23). When the top end is connected with the conductive pattern (25) by means of a solder (27) in mounting the printed wiring circuit board (23) of IC (17), the vicinity of the mounting portion has conductivity in a using frequency band, which is less than a few tens MHz.

Abstract translation: 为了提供高频电流抑制型的电子部件，能够完全抑制高频电流，即使在高频时使用也能够发生电磁干扰，也可以使用该接合线等。 集成电路器件（IC）17在高频使用时高速工作，并且预定数量的端子（19）设置有高频电流抑制器（21），用于衰减通过的高频电流 终端本身。 该高频电流抑制器（21）是厚度为0.3〜20（μm）范围的薄膜磁性物质，并且设置在各端子（19）的整个表面上，覆盖安装部 用于安装IC（17）的印刷布线电路板（23）和包括设置在印刷布线电路板（23）上的导电图案的连接部分的边缘。 当在安装IC（17）的印刷布线电路板（23）时顶端通过焊料（27）与导电图案（25）连接时，安装部分的附近具有使用频带的导电性 ，小于几十MHz。

公开(公告)号：US20240297142A1

公开(公告)日：2024-09-05

申请号：US18572753

申请日：2022-03-16

Applicant: NIPPON MICROMETAL CORPORATION

Inventor： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI

IPC: H01L23/00 ,  G01N23/2276

CPC classification number: H01L24/45 ,  G01N23/2276 ,  H01L24/43 ,  G01N2223/102 ,  G01N2223/602 ,  G01N2223/61 ,  G01N2223/633 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/45147 ,  H01L2224/4555 ,  H01L2224/45565 ,  H01L2224/45609 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/365

Abstract: To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio CAu/CNi of a concentration CAu (mass %) of Au to a concentration CNi (mass %) of Ni relative to the entire wire is 0.02 or more and 0.7 or less, a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less, and at least one of the following conditions (i) and (ii) is satisfied:



(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

公开(公告)号：US20180122765A1

公开(公告)日：2018-05-03

申请号：US15852798

申请日：2017-12-22

Applicant: NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

Inventor： Daizo ODA ,  Motoki ETO ,  Kazuyuki SAITO ,  Teruo HAIBARA ,  Ryo OISHI ,  Takashi YAMADA ,  Tomohiro UNO

IPC: H01L23/00 ,  C22C9/00 ,  C22C5/04

CPC classification number: H01L24/45 ,  B32B15/00 ,  C22C5/04 ,  C22C9/00 ,  C22C9/06 ,  H01L24/43 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01028 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2924/01007 ,  H01L2924/01001 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01046 ,  H01L2924/01033

Abstract: A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US08836120B2

公开(公告)日：2014-09-16

申请号：US13090092

申请日：2011-04-19

Applicant: Khalil Hosseini ,  Manfred Mengel ,  Joachim Mahler

Inventor： Khalil Hosseini ,  Manfred Mengel ,  Joachim Mahler

IPC: H01L23/48 ,  H01L23/00

CPC classification number: H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/43 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05017 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05179 ,  H01L2224/05184 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05679 ,  H01L2224/05681 ,  H01L2224/06181 ,  H01L2224/29111 ,  H01L2224/29179 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/43826 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45664 ,  H01L2224/45679 ,  H01L2224/45681 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48879 ,  H01L2224/48881 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15747 ,  H01L2924/181 ,  Y10T428/2938 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01031 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor chip, a contact pad of the semiconductor chip and a first layer arranged over the contact pad. The first layer includes niobium, tantalum or an alloy including niobium and tantalum.

Abstract translation: 半导体器件包括半导体芯片，半导体芯片的接触焊盘和布置在接触焊盘上的第一层。 第一层包括铌，钽或包括铌和钽的合金。

公开(公告)号：US20070290373A1

公开(公告)日：2007-12-20

申请号：US11810330

申请日：2007-06-04

Applicant: Manfred Reinold ,  Thomas Kaden ,  Immanuel Mueller

Inventor： Manfred Reinold ,  Thomas Kaden ,  Immanuel Mueller

IPC: H01L23/52

CPC classification number: H01R4/023 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43847 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45033 ,  H01L2224/45111 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45565 ,  H01L2224/45624 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/2076 ,  H01R13/03 ,  H01R43/02 ,  H01L2924/00014 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/01006 ,  H01L2924/206

Abstract: A bonding wire takes the form of a ribbon, and a bond includes such a bonding wire. The bonding wire includes at least two layers having different current carrying capacity.

Abstract translation: 接合线呈带状，接合线包括这种接合线。 接合线包括具有不同载流能力的至少两层。

公开(公告)号：US20050150932A1

公开(公告)日：2005-07-14

申请号：US10504246

申请日：2003-02-05

Applicant: Khalil Hosseini

Inventor： Khalil Hosseini

IPC: B23K20/00 ,  B23K20/10 ,  B23K26/20 ,  B23K31/02

CPC classification number: H01L24/85 ,  B23K20/004 ,  B23K20/10 ,  B23K26/20 ,  B23K2101/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05655 ,  H01L2224/32245 ,  H01L2224/43826 ,  H01L2224/43827 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48655 ,  H01L2224/48755 ,  H01L2224/48855 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85099 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L2224/85455 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/45644 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2924/2075

Abstract: The invention relates to a wire-bonding process and to a process for producing a bonded joint. A bonding location is heated by means of a laser beam originating from a laser, the arrangement comprising an ultrasonic wedge-wedge bonding unit with a bonding needle, a copper or aluminum bonding wire guide, and a copper or aluminum wire for an ultrasonic wedge-wedge bonding process, and at least one of the bonding locations having a hard-metal coating.

Abstract translation: 本发明涉及一种引线接合方法和一种用于制造接合接头的方法。 通过源自激光器的激光束加热接合位置，该装置包括具有接合针的超声波楔形楔形结合单元，铜或铝接合线引导件，以及用于超声波楔形的铜或铝线， 楔形粘合工艺，并且至少一个粘合位置具有硬金属涂层。