Film thickness and composition measurement via auger electron spectroscopy and electron probe microanalysis
    2.
    发明授权
    Film thickness and composition measurement via auger electron spectroscopy and electron probe microanalysis 失效
    通过螺旋电子能谱和电子探针微量分析测量薄膜厚度和成分

    公开(公告)号:US07495217B1

    公开(公告)日:2009-02-24

    申请号:US11751626

    申请日:2007-05-21

    申请人: Ying Gao Gary Janik

    发明人: Ying Gao Gary Janik

    IPC分类号: G01N23/00 G21K7/00

    摘要: In some embodiments, techniques are described for combining an X-ray detector (e.g., for providing EPMA) and an electron detector (e.g., for providing AES) to provide a tool for determining film compositions and thicknesses on a specimen, such as a semiconductor structure or wafer. In one embodiment, a system includes a beam generator configurable to direct a beam towards a specimen. The electron beam may generate Auger electrons and X-rays. The system may also include at least one electron detector disposed adjacent to (e.g., above) the specimen to detect electrons and measure their energies emanating from a top layer of the specimen. One or more X-ray detectors may be disposed adjacent to the specimen to detect X-rays.

    摘要翻译: 在一些实施例中,描述了用于组合X射线检测器(例如,用于提供EPMA)和电子检测器(例如,用于提供AES)的技术以提供用于确定样品(例如半导体)上的膜组成和厚度的工具 结构或晶片。 在一个实施例中,系统包括可配置成将梁指向样本的光束发生器。 电子束可产生俄歇电子和X射线。 该系统还可以包括与样本相邻(例如,在上方)附近设置的至少一个电子检测器,以检测电子并测量其从样品的顶层发出的能量。 可以将一个或多个X射线检测器设置成与样本相邻以检测X射线。

    Analytical method of auger electron spectroscopy for insulating sample
    4.
    发明授权
    Analytical method of auger electron spectroscopy for insulating sample 失效
    绝缘样品螺旋电子能谱分析方法

    公开(公告)号:US5889282A

    公开(公告)日:1999-03-30

    申请号:US919154

    申请日:1997-08-28

    CPC分类号: G01N23/2276 H01J2237/2511

    摘要: A method of Auger Electron Spectroscopic (AES) analysis for a surface of an insulating sample. The method is characterized by performing an AES analysis after depositing a conductive layer of a designated thickness on the surface of a sample containing an insulating layer by means of an ion beam sputtering for the purpose of the preventing charge accumulation. The conductive layer preferably is deposited to have a thickness of at least 6 .ANG. to 50 .ANG. and a beam voltage used for applying the conductive layer is at least 3 Kev. The conductive layer is made of any of iridium(Ir), chrome(Cr) and gold(Au). Because any electron charge generated on the sample is discharged via the conductive layer, the AES analysis can be performed for a sample containing an insulating layer.

    摘要翻译: 绝缘样品表面的俄歇电子能谱(AES)分析方法。 该方法的特征在于,为了防止电荷累积,通过离子束溅射,在含有绝缘层的样品的表面上沉积指定厚度的导电层之后进行AES分析。 导电层优选沉积为具有至少6安培至50埃的厚度,并且用于施加导电层的束电压为至少3Kev。 导电层由铱(Ir),铬(Cr)和金(Au)中的任一种制成。 因为在样品上产生的任何电子电荷通过导电层放电,所以可以对含有绝缘层的样品进行AES分析。

    AUGER ELEMENTAL IDENTIFICATION ALGORITHM
    6.
    发明申请
    AUGER ELEMENTAL IDENTIFICATION ALGORITHM 失效
    AUGER元素识别算法

    公开(公告)号:US20130341504A1

    公开(公告)日:2013-12-26

    申请号:US13913240

    申请日:2013-06-07

    IPC分类号: H01J49/00 H01J49/44

    摘要: System and methods for decomposing an Auger electron spectrum into elemental and chemical components, includes conditioning and input spectrum to generate a normalized input spectrum; determining statistical correlation between the normalized input spectrum and stored elemental spectral signatures; and characterizing elemental or chemical species in the input spectrum from the statistical correlation, wherein said conditioning the input spectrum includes estimating a background signal of non-Auger electrons in the input spectrum and subtracting the estimated background signal from the input spectrum.

    摘要翻译: 将俄歇电子谱分解为元素和化学成分的系统和方法包括调节和输入光谱以产生归一化输入光谱; 确定归一化输入光谱和存储的基本光谱特征之间的统计相关性; 以及从所述统计相关性表征所述输入光谱中的元素或化学物质,其中所述调节所述输入光谱包括估计所述输入光谱中的非俄歇电子的背景信号并从所述输入光谱中减去所估计的背景信号。

    APPARATUS FOR TREATMENT OF SAMPLES FOR AUGER ELECTRONIC SPECTROMETER (AES) IN THE MANUFACTURE OF INTEGRATED CIRCUITS
    7.
    发明申请
    APPARATUS FOR TREATMENT OF SAMPLES FOR AUGER ELECTRONIC SPECTROMETER (AES) IN THE MANUFACTURE OF INTEGRATED CIRCUITS 审中-公开
    用于处理集成电路制造中的AUGER电子光谱仪(AES)样品的设备

    公开(公告)号:US20110168554A1

    公开(公告)日:2011-07-14

    申请号:US13070767

    申请日:2011-03-24

    IPC分类号: C23C14/34

    CPC分类号: G01N23/2276 H01L22/12

    摘要: An apparatus for treatment of a sample for the manufacture of integrated circuits includes a holder apparatus and a stage which is coupled to the holder apparatus. The stage is capable of holding a portion of a sample to be analyzed. The apparatus also includes a shield that is operably coupled to the stage to block a portion of the sample. The shield is capable of movement relative to the sample to block one or more portions of the sample. The shield is provided on a track member and is movable from a first spatial location to a second spatial location on the track member. The apparatus further includes an enclosure surrounding an entirety of the sample and the shield.

    摘要翻译: 用于处理用于制造集成电路的样品的装置包括保持装置和与保持装置连接的台。 该阶段能够容纳要分析的样品的一部分。 该装置还包括可操作地耦合到载物台以阻挡样品的一部分的屏蔽件。 屏蔽能够相对于样品移动以阻挡样品的一个或多个部分。 屏蔽件设置在轨道构件上并且可从轨道构件上的第一空间位置移动到第二空间位置。 该装置还包括围绕整个样品和屏蔽件的外壳。

    Method of nano thin film thickness measurement by auger electron spectroscopy
    8.
    发明授权
    Method of nano thin film thickness measurement by auger electron spectroscopy 有权
    通过螺旋电子能谱法测量纳米薄膜厚度的方法

    公开(公告)号:US07582868B2

    公开(公告)日:2009-09-01

    申请号:US11192199

    申请日:2005-07-27

    IPC分类号: G01N23/00

    CPC分类号: G01B15/02 G01N23/2276

    摘要: A system and method for measuring the thickness of an ultra-thin multi-layer film on a substrate is disclosed. A physical model of an ultra-thin multilayer structure and Auger electron emission from the nano-multilayer structure is built. A mathematical model for the Auger Electron Spectroscopy (AES) measurement of the multilayer thin film thickness is derived according to the physical model. Auger electron spectroscopy (AES) is first performed on a series of calibration samples. The results are entered into the mathematical model to determine the parameters in the mathematical equation. The parameters may be calibrated by the correlation measurements of the alternate techniques. AES analysis is performed on the ultra-thin multi-layer film structure. The results are entered into the mathematical model and the thickness is calculated.

    摘要翻译: 公开了一种用于测量衬底上的超薄多层膜的厚度的系统和方法。 建立了超薄多层结构的物理模型和纳米多层结构的俄歇电子发射。 根据物理模型推导了多层薄膜厚度的俄歇电子能谱(AES)测量数学模型。 首先在一系列校准样品上进行俄歇电子能谱(AES)。 将结果输入到数学模型中以确定数学方程中的参数。 可以通过替代技术的相关性测量来校准参数。 对超薄多层膜结构进行AES分析。 将结果输入到数学模型中,并计算厚度。

    Method and System for Providing a Compensated Auger Spectrum
    9.
    发明申请
    Method and System for Providing a Compensated Auger Spectrum 有权
    提供补偿俄歇谱的方法和系统

    公开(公告)号:US20080234962A1

    公开(公告)日:2008-09-25

    申请号:US11877125

    申请日:2007-10-23

    IPC分类号: G06F19/00

    CPC分类号: G01N23/2276

    摘要: A system for providing a compensated Auger spectrum, the system includes: a processor, adapted to generate a compensated Auger spectrum in response to a non-compensated Auger spectrum and in response to an electric potential related parameter; and an interface to a electron detector that is adapted to detect electrons emitted from the first area, wherein the interface is connected to the processor, and wherein the electric potential related parameter reflects a state of a first area of an object that was illuminated by a charged particle beam during the generation of the non-compensated Auger spectrum.

    摘要翻译: 一种用于提供经补偿的俄歇频谱的系统,所述系统包括:处理器,适于响应于未补偿的俄歇频谱并响应于电位相关参数产生经补偿的俄歇频谱; 以及与适于检测从第一区域发射的电子的电子检测器的接口,其中该接口连接到该处理器,并且其中该电位相关参数反映由该第一区域照射的该物体的第一区域的状态 在产生非补偿俄歇光谱期间的带电粒子束。

    Element analyzing method with a scanning type probe microscope and super
short high voltage pulse applying method using the element analyzing
method
    10.
    发明授权
    Element analyzing method with a scanning type probe microscope and super short high voltage pulse applying method using the element analyzing method 失效
    元素分析方法采用扫描式探针显微镜和超短脉冲高压脉冲施加方法

    公开(公告)号:US5898176A

    公开(公告)日:1999-04-27

    申请号:US849719

    申请日:1997-09-16

    摘要: A high space resolving power of the scanning type probe microscope combined with an element analysis and the chemical bond condition analyzing ability of an Auger electronic spectroscopic method, and the energy analyzing results of the Auger electron generated by the high energy electron projection are considered, whereby it is possible to determine the three dimensional coordinate of the atomic nucleus of one atom of the surface, analyze the element thereof and analyze the chemical bond condition. While during the inherent operation of the scanning type probe microscope which may observe the atomic order image or in stopping the operation thereof, a super short AC or DC high voltage pulse is once or repeatedly applied between the probe and the sample, so that valent electron spherically symmetrically distributed about a nucleus or an internal shell electron of the sample is excited, and an energy analysis and a counter analysis of a photon or an Auger electron discharged in accordance with the excitation is performed. A determination of a three-dimensional coordinates of a nucleus for every one atom of the surface of the sample, the element analysis thereof, and a measurement of a surface distribution concerning a chemical bond condition analysis are carried out to obtain an atomic image of the surface of the sample including element and chemical bond information.

    摘要翻译: PCT No.PCT / JP95 / 02702 Sec。 371日期:1997年9月16日 102(e)日期1997年9月16日PCT 1995年12月26日PCT公布。 出版物WO96 / 20406 日期1996年7月4日扫描型探针显微镜的高空间分辨能力与元素分析和俄歇电子光谱法的化学键条件分析能力以及由高能电子产生的俄歇电子能量分析结果 考虑到投影,由此可以确定表面一个原子的原子核的三维坐标,分析其元素并分析化学键条件。 在扫描型探针显微镜的固有操作过程中,可以观察原子秩序图像或停止其操作,在探针和样品之间一次或重复施加超短AC或DC高电压脉冲,使得价电子 对样品的核或内壳电子进行球形对称分布,并进行根据激发的光子或俄歇电子的能量分析和反分析。 对样品表面的每一个原子的核的三维坐标的确定,其元素分析以及关于化学键条件分析的表面分布的测量进行以获得原子图像 样品表面包括元素和化学键信息。