公开(公告)号：US20240297142A1

公开(公告)日：2024-09-05

申请号：US18572753

申请日：2022-03-16

申请人： NIPPON MICROMETAL CORPORATION

发明人： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI

IPC分类号： H01L23/00 ,  G01N23/2276

CPC分类号： H01L24/45 ,  G01N23/2276 ,  H01L24/43 ,  G01N2223/102 ,  G01N2223/602 ,  G01N2223/61 ,  G01N2223/633 ,  H01L2224/432 ,  H01L2224/43826 ,  H01L2224/45147 ,  H01L2224/4555 ,  H01L2224/45565 ,  H01L2224/45609 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/365

摘要： To provide a novel Cu bonding wire that achieves a favorable FAB shape and a favorable bondability of the 2nd bonded part, and further achieves favorable bond reliability even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio CAu/CNi of a concentration CAu (mass %) of Au to a concentration CNi (mass %) of Ni relative to the entire wire is 0.02 or more and 0.7 or less, a concentration of Au at the surface of the wire is 10 atomic % or more and 90 atomic % or less, and at least one of the following conditions (i) and (ii) is satisfied:



(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

公开(公告)号：US11815473B2

公开(公告)日：2023-11-14

申请号：US16812109

申请日：2020-03-06

申请人： ASML Netherlands B.V.

发明人： Kuo-Feng Tseng ,  Zhonghua Dong ,  Yixiang Wang ,  Zhong-wei Chen

IPC分类号： G01N23/203 ,  G01N23/2252 ,  G01N23/2254 ,  G01N23/2276

CPC分类号： G01N23/203 ,  G01N23/2252 ,  G01N23/2254 ,  G01N23/2276 ,  G01N2223/309 ,  G01N2223/33

摘要： Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

公开(公告)号：US20240266313A1

公开(公告)日：2024-08-08

申请号：US18685871

申请日：2022-10-18

申请人： NIPPON STEEL Chemical & Material Co., Ltd. ,  NIPPON MICROMETAL CORPORATION

发明人： Tomohiro UNO ,  Tetsuya OYAMADA ,  Daizo ODA ,  Motoki ETO

IPC分类号： H01L23/00 ,  G01N23/203 ,  G01N23/2276

CPC分类号： H01L24/45 ,  H01L24/43 ,  G01N23/203 ,  G01N23/2276 ,  G01N2223/601 ,  G01N2223/602 ,  G01N2223/611 ,  H01L2224/4321 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/365

摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

公开(公告)号：US11674913B2

公开(公告)日：2023-06-13

申请号：US17383532

申请日：2021-07-23

申请人： JEOL Ltd.

发明人： Takaomi Yokoyama ,  Takanori Murano

IPC分类号： G01N23/2252 ,  G01N23/2209 ,  G01N23/2276

CPC分类号： G01N23/2252 ,  G01N23/2209 ,  G01N23/2276 ,  G01N2223/079

摘要： Spectrums are measured by irradiating an electron beam on a sample while varying an accelerating potential and by detecting X-rays emitted from the sample. A normalizer unit normalizes the spectrums and thereby calculates normalized spectrums. A difference calculator unit calculates difference spectrums based on the normalized spectrums. A search unit performs a search in a database for each comparison difference spectrum, and identifies compounds contained in the sample.

公开(公告)号：US12132026B2

公开(公告)日：2024-10-29

申请号：US18685871

申请日：2022-10-18

申请人： NIPPON STEEL Chemical & Material Co., Ltd. ,  NIPPON MICROMETAL CORPORATION

发明人： Tomohiro Uno ,  Tetsuya Oyamada ,  Daizo Oda ,  Motoki Eto

IPC分类号： H01L23/00 ,  G01N23/203 ,  G01N23/2276

CPC分类号： H01L24/45 ,  H01L24/43 ,  G01N23/203 ,  G01N23/2276 ,  G01N2223/601 ,  G01N2223/602 ,  G01N2223/611 ,  H01L2224/4321 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/365

摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

公开(公告)号：US20210255124A1

公开(公告)日：2021-08-19

申请号：US17177376

申请日：2021-02-17

申请人： JEOL Ltd.

发明人： Kenichi Tsutsumi ,  Tatsuya Uchida

IPC分类号： G01N23/2276 ,  H01J37/28

摘要： An Auger electron microscope includes a processing unit, and the processing unit performs processing of: acquiring an actually measured Auger spectrum obtained by measuring a test specimen containing an analysis target element; acquiring a plurality of first standard Auger spectra obtained by measuring a plurality of standard specimens each containing the same analysis target element but in different chemical states; calculating, based on a test specimen measurement condition that is a measurement condition when the test specimen has been measured and a standard specimen measurement condition that is a measurement condition when the standard specimens have been measured, a plurality of second standard Auger spectra under the test specimen measurement condition from the plurality of first standard Auger spectra; and performing curve fitting calculation of the actually measured Auger spectrum by using the plurality of calculated second standard Auger spectra.

公开(公告)号：US11062434B2

公开(公告)日：2021-07-13

申请号：US16590706

申请日：2019-10-02

申请人： JEOL Ltd.

发明人： Tatsuya Uchida

IPC分类号： G06T5/00 ,  G01N23/2273 ,  G01N23/2276 ,  G06T5/50 ,  G06T7/40

摘要： A method of generating an elemental map includes: acquiring a plurality of correction channel images by scanning a surface of a standard specimen having a uniform elemental concentration with a primary beam and generating a correction channel image for each channel; generating correction information for each pixel of each correction channel image among the plurality of correction channel images based on a brightness value of the pixel; acquiring a plurality of analysis channel images by scanning a surface of a specimen to be analyzed with the primary beam and generating an analysis channel image for each channel; correcting brightness values of pixels constituting an analysis channel image among the plurality of analysis channel images based on the correction information; and generating an elemental map of the specimen to be analyzed based on the plurality of analysis channel images having pixels with corrected brightness values.

公开(公告)号：US20240290745A1

公开(公告)日：2024-08-29

申请号：US18572708

申请日：2023-03-23

申请人： NIPPON MICROMETAL CORPORATION

发明人： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI

IPC分类号： H01L23/00 ,  G01N23/203 ,  G01N23/2276

CPC分类号： H01L24/45 ,  H01L24/43 ,  H01L24/85 ,  G01N23/203 ,  G01N23/2276 ,  G01N2223/601 ,  G01N2223/602 ,  G01N2223/611 ,  H01L2224/4321 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/85035 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/3651

摘要： The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio of a concentration CAu (mass %) of Au to a concentration CNi (mass %) of Ni relative to the entire wire is 0.02

公开(公告)号：US20240290743A1

公开(公告)日：2024-08-29

申请号：US18572127

申请日：2022-03-16

申请人： NIPPON MICROMETAL CORPORATION

发明人： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI

IPC分类号： H01L23/00 ,  G01N23/203 ,  G01N23/2276

CPC分类号： H01L24/45 ,  H01L24/43 ,  H01L24/85 ,  G01N23/203 ,  G01N23/2276 ,  G01N2223/601 ,  G01N2223/602 ,  G01N2223/611 ,  H01L2224/4321 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/85035 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/3651

摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio CNi/CPd of a concentration CNi (mass %) of Ni to a concentration CPd (mass %) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, a position indicating a maximum concentration of Ni is present in the range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic % or more, and at least one of the following conditions (i) and (ii) is satisfied:



(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

公开(公告)号：US20200271598A1

公开(公告)日：2020-08-27

申请号：US16812109

申请日：2020-03-06

申请人： ASML Netherlands B.V.

发明人： Kuo-Feng TSENG ,  Zhonghua DONG ,  Yixiang WANG ,  Zhong-wei CHEN

IPC分类号： G01N23/203 ,  G01N23/2276 ,  G01N23/2254 ,  G01N23/2252

摘要： Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.