公开(公告)号：US09812421B2

公开(公告)日：2017-11-07

申请号：US15105707

申请日：2014-12-04

申请人： NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. ,  NIPPON MICROMETAL CORPORATION

发明人： Tomohiro Uno ,  Yoshiaki Hagiwara ,  Tetsuya Oyamada ,  Daizo Oda

IPC分类号： H01L23/48 ,  H01L23/00 ,  C22C5/06 ,  C22C5/08 ,  C22C9/06 ,  B23K35/30 ,  B23K35/32

CPC分类号： H01L24/45 ,  B23K35/3006 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/322 ,  C22C5/06 ,  C22C5/08 ,  C22C9/06 ,  H01L24/43 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45032 ,  H01L2224/45101 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45163 ,  H01L2224/45164 ,  H01L2224/45166 ,  H01L2224/45541 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/4809 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/013 ,  H01L2924/10253 ,  H01L2924/206 ,  H01L2924/386 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/01204 ,  H01L2924/01033 ,  H01L2924/01203

摘要： Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.

公开(公告)号：US12132026B2

公开(公告)日：2024-10-29

申请号：US18685871

申请日：2022-10-18

申请人： NIPPON STEEL Chemical & Material Co., Ltd. ,  NIPPON MICROMETAL CORPORATION

发明人： Tomohiro Uno ,  Tetsuya Oyamada ,  Daizo Oda ,  Motoki Eto

IPC分类号： H01L23/00 ,  G01N23/203 ,  G01N23/2276

CPC分类号： H01L24/45 ,  H01L24/43 ,  G01N23/203 ,  G01N23/2276 ,  G01N2223/601 ,  G01N2223/602 ,  G01N2223/611 ,  H01L2224/4321 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/365

摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

公开(公告)号：US20230335528A1

公开(公告)日：2023-10-19

申请号：US18211069

申请日：2023-06-16

申请人： NIPPON MICROMETAL COPORATION

发明人： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  H01L24/43 ,  H01L24/85 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/85035 ,  H01L2224/85203 ,  H01L2224/859 ,  H01L2924/365

摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that:



in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer,
a thickness of the coating layer is 10 nm or more and 130 nm or less,
an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration CPd (atomic %) to an Ni concentration CNi (atomic %), CPd/CNi, for all measurement points in the coating layer, and
the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3× or less is 50% or more relative to the total number of measurement points in the coating layer.

公开(公告)号：US20170200689A1

公开(公告)日：2017-07-13

申请号：US15107421

申请日：2015-07-22

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Takashi YAMADA ,  Daizo ODA ,  Teruo HAIBARA ,  Ryo OISHI ,  Kazuyuki SAITO ,  Tomohiro UNO

IPC分类号： H01L23/00 ,  C22C9/04 ,  C22C9/06 ,  B23K35/02 ,  B23K35/30

CPC分类号： B23K35/0227 ,  B23K35/3013 ,  B23K35/302 ,  B23K2101/40 ,  B32B15/00 ,  B32B15/01 ,  B32B15/018 ,  C22C5/04 ,  C22C9/00 ,  C22C9/04 ,  C22C9/06 ,  C23C30/00 ,  C23C30/005 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/4382 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45118 ,  H01L2224/4512 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/45178 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48824 ,  H01L2224/78 ,  H01L2224/78251 ,  H01L2224/85 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85203 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/0665 ,  H01L2924/0705 ,  H01L2924/10253 ,  H01L2924/186 ,  Y10T428/12868 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/265 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01045 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01031 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01083 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/00015 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/20105 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01027 ,  H01L2924/01047 ,  H01L2924/01013

摘要： A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 μm or more and 1.3 μm or less.

公开(公告)号：US20160190047A1

公开(公告)日：2016-06-30

申请号：US14902158

申请日：2014-07-02

申请人： ROSENBERGER HOCHFREQUENZTECHNIK GMBH & CO. KG

发明人： Sean S. Cahill ,  Eric A. Sanjuan

IPC分类号： H01L23/495 ,  H01L23/498 ,  H01L23/64 ,  H01L21/48 ,  H01L23/66

CPC分类号： H01L23/49541 ,  H01L21/4821 ,  H01L21/4846 ,  H01L23/49506 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/64 ,  H01L23/645 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2224/45541 ,  H01L2224/4555 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49052 ,  H01L2224/85444 ,  H01L2224/8592 ,  H01L2224/8593 ,  H01L2224/85931 ,  H01L2224/85935 ,  H01L2224/85939 ,  H01L2224/85947 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/20654 ,  H01L2224/45099 ,  H01L2924/00

摘要： A die package having a plurality of connection pads, a die substrate supporting a plurality of connection elements, a first lead having a first metal core with a first core diameter, and a dielectric layer surrounding the first metal core, the dielectric layer having a first dielectric thickness that varies along its length and/or the dielectric layer having an outer metal layer at least partially surrounding the dielectric layer, for selectively modifying the electrical characteristics of the lead.

摘要翻译： 具有多个连接焊盘的模具封装，支撑多个连接元件的管芯基板，具有第一芯直径的第一金属芯的第一引线和围绕第一金属芯的介电层，该介电层具有第一 电介质厚度沿其长度变化和/或具有至少部分围绕电介质层的外部金属层的电介质层，用于选择性地修改引线的电特性。

公开(公告)号：US20240266313A1

公开(公告)日：2024-08-08

申请号：US18685871

申请日：2022-10-18

申请人： NIPPON STEEL Chemical & Material Co., Ltd. ,  NIPPON MICROMETAL CORPORATION

发明人： Tomohiro UNO ,  Tetsuya OYAMADA ,  Daizo ODA ,  Motoki ETO

IPC分类号： H01L23/00 ,  G01N23/203 ,  G01N23/2276

CPC分类号： H01L24/45 ,  H01L24/43 ,  G01N23/203 ,  G01N23/2276 ,  G01N2223/601 ,  G01N2223/602 ,  G01N2223/611 ,  H01L2224/4321 ,  H01L2224/437 ,  H01L2224/43825 ,  H01L2224/43848 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45644 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01034 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/3512 ,  H01L2924/365

摘要： A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.

公开(公告)号：US20240258288A1

公开(公告)日：2024-08-01

申请号：US18160818

申请日：2023-01-27

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Makoto Shibuya ,  Kwang-Soo Kim

IPC分类号： H01L25/16 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L25/165 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49555 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/45 ,  H01L24/48 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45541 ,  H01L2224/45624 ,  H01L2224/45647 ,  H01L2224/48245 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104

摘要： In a described example, an apparatus includes: a package substrate with conductive leads; a semiconductor die mounted to the package substrate, the semiconductor die having a first thickness; electrical connections coupling bond pads on the semiconductor die to conductive leads on the package substrate; brackets attached to the package substrate spaced from the semiconductor die and extending away from the package substrate to a distance from the package substrate that is greater than the first thickness of the semiconductor die; and mold compound covering the package substrate, the semiconductor die, the brackets, and the semiconductor die to form a semiconductor device package having a board side surface and a top surface opposite the board side surface, and having portions of the brackets exposed from the mold compound on the top surface of the semiconductor device package to form mounts for a passive component.

公开(公告)号：US09431275B2

公开(公告)日：2016-08-30

申请号：US13209898

申请日：2011-08-15

申请人： Randy Bindrup ,  W. Eric Boyd ,  John Leon ,  James Yamaguchi ,  Angel Pepe

发明人： Randy Bindrup ,  W. Eric Boyd ,  John Leon ,  James Yamaguchi ,  Angel Pepe

IPC分类号： H01L23/488 ,  H01L21/56 ,  H01L23/00 ,  H01L25/10

CPC分类号： H01L24/45 ,  H01L21/568 ,  H01L23/498 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/24 ,  H01L24/82 ,  H01L24/96 ,  H01L25/105 ,  H01L2224/04042 ,  H01L2224/45144 ,  H01L2224/45541 ,  H01L2224/82001 ,  H01L2224/96 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2224/82 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/48

摘要： A stackable integrated circuit chip layer and module device that avoids the use of electrically conductive elements on the external surfaces of a layer containing an integrated circuit die by taking advantage of conventional wire bonding equipment to provide an electrically conductive path defined by a wire bond segment that is encapsulated in a potting material so as to define an electrically conductive wire bond “through-via” accessible from at least the lower or second surface of the layer.

摘要翻译： 一种可堆叠的集成电路芯片层和模块装置，其避免了在包含集成电路管芯的层的外表面上使用导电元件，利用常规引线键合设备来提供由引线键合段限定的导电路径， 封装在灌封材料中，以便限定可从该层的至少下表面或第二表面接近的导电引线键合“通孔”。

公开(公告)号：US20150311174A1

公开(公告)日：2015-10-29

申请号：US14693892

申请日：2015-04-23

申请人： Beijing FUNATE Innovation Technology Co., LTD.

发明人： YU-QUAN WANG ,  LI QIAN

IPC分类号： H01L23/00 ,  H01L23/528 ,  H01L23/552

CPC分类号： H01L24/49 ,  H01L21/02603 ,  H01L21/4825 ,  H01L21/4853 ,  H01L21/4885 ,  H01L21/4889 ,  H01L23/04 ,  H01L23/49 ,  H01L23/52 ,  H01L23/552 ,  H01L24/42 ,  H01L24/44 ,  H01L24/45 ,  H01L24/46 ,  H01L24/47 ,  H01L24/48 ,  H01L29/413 ,  H01L2221/1094 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45193 ,  H01L2224/45541 ,  H01L2224/4556 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor package structure includes a substrate, and a package preform. The substrate includes a plurality of conductive tracing wires. The package preform includes a semiconductor chip and a plurality of binding wires. The semiconductor chip includes a plurality of welding spots, and the welding spots are electrically connected with corresponding conductive tracing wires by the binding wires. Each binding wire comprises a carbon nanotube composite wire, the carbon nanotube composite wire includes a carbon nanotube wire and a metal layer. The carbon nanotube wire consists of a plurality of carbon nanotubes spirally arranged along an axial direction an axial direction of the carbon nanotube wire.

摘要翻译： 半导体封装结构包括衬底和封装预制件。 衬底包括多个导电跟踪线。 封装预制件包括半导体芯片和多个绑定线。 半导体芯片包括多个焊接点，并且焊点通过绑定线与对应的导电跟踪电线电连接。 每个装配线包括碳纳米管复合线，碳纳米管复合线包括碳纳米管线和金属层。 碳纳米管线由沿碳纳米管线的轴向的轴向螺旋地排列的多个碳纳米管构成。

公开(公告)号：US09966355B2

公开(公告)日：2018-05-08

申请号：US14399351

申请日：2013-05-07

申请人： Heraeus Materials Technology GmbH & Co. KG

发明人： Eugen Milke ,  Peter Prenosil ,  Sven Thomas

IPC分类号： B32B15/01 ,  B21F9/00 ,  B23K1/00 ,  C22C9/00 ,  C22C21/00 ,  H01L23/00 ,  H01B1/02 ,  C22F1/04 ,  C22F1/08

CPC分类号： H01L24/45 ,  B21F9/005 ,  B23K1/0016 ,  B32B15/01 ,  C22C9/00 ,  C22C21/00 ,  C22F1/04 ,  C22F1/08 ,  H01B1/023 ,  H01B1/026 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/43848 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45541 ,  H01L2224/45565 ,  H01L2224/45617 ,  H01L2224/45624 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4823 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/2076 ,  Y10T428/1275 ,  H01L2924/00014 ,  H01L2924/01201 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01205 ,  H01L2924/00 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2224/45139 ,  H01L2924/00012 ,  H01L2924/01049 ,  H01L2924/01006

摘要： A wire, preferably a bonding wire for bonding in microelectronics, contains a copper core with a surface and coating layer containing aluminum superimposed over the surface of the copper core. The ratio of the thickness of the coating layer to the diameter of the copper core is from 0.05 to 0.2 μm. The wire has a diameter in the range of from 100 μm to 600 μm and specified standard deviations of the diameter of the copper core and of the thickness of the coating layer. The invention further relates to a process for making a wire, to a wire obtained by the process, to an electric device containing at least two elements and the wire, to a propelled device containing the electric device, and to a process of connecting two elements through the wire by wedge bonding.