LEAD FRAME ASSEMBLY FOR A SEMICONDUCTOR DEVICE

    公开(公告)号:US20240258207A1

    公开(公告)日:2024-08-01

    申请号:US18631535

    申请日:2024-04-10

    申请人: NEXPERIA B.V.

    IPC分类号: H01L23/495

    CPC分类号: H01L23/49524 H01L23/49555

    摘要: This disclosure relates to a lead frame assembly for a semiconductor device, a semiconductor device and an associated method of manufacture. The lead frame assembly includes a die attach structure and a clip frame structure. The clip frame structure includes a die connection portion configured to contact a contact terminal on a top side of the semiconductor die; and a continuous lead portion extending along the die connection portion. The continuous lead portion is integrally formed with the die connection portion.

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND TEST SOCKET FOR USE IN THE SAME

    公开(公告)号:US20240201223A1

    公开(公告)日:2024-06-20

    申请号:US18068089

    申请日:2022-12-19

    发明人: Toshitsugu ISHII

    IPC分类号: G01R1/04 H01L23/31 H01L23/495

    摘要: A manufacturing method of a semiconductor device includes a step of preparing a test object including a body for sealing a semiconductor chip and a lead terminal, a step of preparing a test socket including a first contact pin, and a step of electrically testing the semiconductor chip by contacting the first contact pin with the lead terminal. The lead terminal includes a lead upper surface located on an upper surface side of the body and a lead bottom surface located on an bottom surface side of the body. The lead terminal includes a protruding portion protruding from the body, and a connecting portion. The lead terminal further includes a bending portion that connects the protruding portion and the connecting portion. Then, in the electrical test step, the first contact pin is contacted with the lead bottom surface of the protruding portion.

    POWER SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20240162123A1

    公开(公告)日:2024-05-16

    申请号:US18419222

    申请日:2024-01-22

    申请人: ROHM CO., LTD.

    发明人: Hideo HARA

    IPC分类号: H01L23/495 H01L23/36

    摘要: A power semiconductor module includes a first terminal which protrudes from a first body side surface of a module body, and a second terminal which protrudes from a second body side surface. The first terminal includes a first portion which protrudes from the first body side surface, a second portion which extends the first portion beyond a body rear surface on the reverse side from from a body main surface, and a third portion which extends from the second portion. The second terminal includes a first portion which protrudes from the second body side surface, a second portion which extends from the first portion beyond the body rear surface on the reverse side from the body main surface, and a third portion which extends from the second portion.

    Lead frame assembly for a semiconductor device

    公开(公告)号:US11973009B2

    公开(公告)日:2024-04-30

    申请号:US16919426

    申请日:2020-07-02

    申请人: NEXPERIA B.V.

    IPC分类号: H01L23/495

    CPC分类号: H01L23/49524 H01L23/49555

    摘要: This disclosure relates to a lead frame assembly for a semiconductor device, a semiconductor device and an associated method of manufacture. The lead frame assembly includes a die attach structure and a clip frame structure. The clip frame structure includes a die connection portion configured to contact a contact terminal on a top side of the semiconductor die; and a continuous lead portion extending along the die connection portion. The continuous lead portion is integrally formed with the die connection portion.

    SEMICONDUCTOR DEVICE
    10.
    发明公开

    公开(公告)号:US20240071875A1

    公开(公告)日:2024-02-29

    申请号:US18272103

    申请日:2022-01-20

    申请人: ROHM CO., LTD.

    发明人: Hiroyuki TAJIRI

    IPC分类号: H01L23/495 H01L23/00

    摘要: A semiconductor device, includes: a substrate having an obverse surface facing in a thickness direction; a first lead having a loading surface facing a side same as a side the obverse surface faces as to the thickness direction and being fixed on the obverse surface; and a first semiconductor element arranged on the loading surface. A dimension of the substrate in a first direction orthogonal to the thickness direction is larger than a dimension of the substrate in a second direction orthogonal to the thickness direction and the first direction. The first lead includes a first region overlapped with the first semiconductor element as viewed in the thickness direction and a second region separated from the first semiconductor element as viewed in the thickness direction, and at least a part of the second region extends along the second direction.